Experimental Characterization of a Double-Stage Hall Effect Thruster

2005 ◽  
Author(s):  
P. Rossetti ◽  
U. Cesari ◽  
M. Saverdi ◽  
M. Capacci ◽  
P. Siciliano ◽  
...  
Keyword(s):  
Hall Effect ◽  
Experimental Characterization ◽  
Hall Effect Thruster

Characterization of a Hall Effect Thruster Using Thermal Imaging

2007 ◽  
Author(s):  
James Tomaszewski ◽  
Richard Branam ◽  
William Hargus ◽  
Taylor Matlock
Keyword(s):  
Hall Effect ◽  
Thermal Imaging ◽  
Hall Effect Thruster

scholarly journals Plasma characterization of a Hall effect thruster for a negative ion source concept

2018 ◽  
Author(s):  
M. Fadone ◽  
V. Antoni ◽  
D. Aprile ◽  
G. Chitarin ◽  
A. Fassina ◽  
...  
Keyword(s):  
Hall Effect ◽  
Ion Source ◽  
Negative Ion ◽  
Hall Effect Thruster ◽  
Plasma Characterization

Characterization of a One Hundred Watt, Long Lifetime Hall Effect Thruster for Small Spacecraft

2017 ◽  
Author(s):  
James J. Szabo ◽  
Rachel Tedrake ◽  
Emily Metivier ◽  
Surjeet Paintal ◽  
Zachary Taillefer
Keyword(s):  
Hall Effect ◽  
Small Spacecraft ◽  
Hall Effect Thruster ◽  
Long Lifetime

Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Experimental Characterization ◽  
Contact Lines ◽  
Tree Structures ◽  
Similar Test ◽  
Dual Damascene ◽  
Copper Interconnect ◽  
Test Conditions

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.

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