Optical Boron Nitride Insulator Erosion Characterization of a 200 W Xenon Hall Thruster

2005 ◽  
Author(s):  
William Hargus ◽  
Joshua Strafaccia
Keyword(s):  
Boron Nitride ◽  
Hall Thruster

Characterization of Eroded Boron Atoms in the Plume of a Hall Thruster

2015 ◽  
Vol 43 (1) ◽  
pp. 35-44 ◽  
Author(s):  
Horatiu C. Dragnea ◽  
Iain D. Boyd ◽  
Brian C. Lee ◽  
Azer P. Yalin
Keyword(s):  
Hall Thruster

Nucleation, growth and characterization of cubic boron nitride (cBN) films

2007 ◽  
Vol 40 (20) ◽  
pp. 6159-6174 ◽  
Author(s):  
W J Zhang ◽  
Y M Chong ◽  
I Bello ◽  
S T Lee
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Nucleation Growth

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

scholarly journals Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

1991 ◽  
Vol 70 (8) ◽  
pp. 4366-4370 ◽  
Author(s):  
A. Bath ◽  
P. J. van der Put ◽  
J. G. M. Becht ◽  
J. Schoonman ◽  
B. Lepley
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulators

scholarly journals Physico-chemical characterization of hybridized graphene and boron-nitride layers

2018 ◽  
Vol 7 (3) ◽  
pp. 223
Author(s):  
Paulina Raquel Martínez-Alanis ◽  
Antonio Alvarez de la Paz ◽  
Ruben Santamaria
Keyword(s):  
Boron Nitride ◽  
Chemical Characterization ◽  
Hybrid Layer ◽  
Net Charge ◽  
Physico Chemical ◽  
Propagating Waves ◽  
Nitride Layers ◽  
Molecular Electrostatic Potential Maps ◽  
Controlled Doping

<p>New materials can be created by modifying matter. In this work we characterize graphene and boron-nitride (BN) layers after doping them with BN and carbon dimers, respectively, in different amounts and with different spatial distributions. We provide the energetic description, electron density features, molecular electrostatic potential maps, net charge populations, and the speeds of propagating waves on the hybridized layers. We show the possibility of designing molecular electrostatic potentials from a spatially controlled doping. A strategy is illustrated on a BN hybrid layer with the adsorption of DNA nucleic acid bases.</p>

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