Magnetic field applications in semiconductor crystal growth and metallurgy

2002 ◽  
Author(s):  
K. Mazuruk ◽  
N. Ramachandran ◽  
R. Grugel
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Semiconductor Crystal

Semiconductor Crystal Growth by the Vertical Bridgman Process With Transverse Rotating Magnetic Fields

2006 ◽  
Vol 129 (2) ◽  
pp. 241-243 ◽  
Author(s):  
X. Wang ◽  
N. Ma
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Applied Magnetic Field ◽  
Rotating Magnetic Field ◽  
Semiconductor Crystal ◽  
Rotating Magnetic Fields ◽  
Electrically Conducting ◽  
Vertical Bridgman ◽  
Bridgman Process

During the vertical Bridgman process, a single semiconductor crystal is grown by the solidification of an initially molten semiconductor contained in an ampoule. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper treats the flow of a molten semiconductor and the dopant transport during the vertical Bridgman process with a periodic transverse or rotating magnetic field. The frequency of the externally applied magnetic field is sufficiently low that this field penetrates throughout the molten semiconductor. Dopant distributions in the crystal are presented.

Thermoelectrically Driven Melt Motion During Floating Zone Crystal Growth With an Axial Magnetic Field

1998 ◽  
Vol 120 (4) ◽  
pp. 839-843 ◽  
Author(s):  
Y. Y. Khine ◽  
J. S. Walker
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Axial Magnetic Field ◽  
Azimuthal Velocity ◽  
Liquid Interfaces ◽  
Floating Zone ◽  
Semiconductor Crystal ◽  
Electrical Conductivities ◽  
Solid Liquid ◽  
Key Parameter

During semiconductor crystal growth with an externally applied magnetic field, thermoelectric currents may drive a melt circulation which affects the properties of the crystal. This paper treats a model problem for a floating zone process with a uniform axial magnetic field, with planar solid-liquid interfaces, with a cylindrical free surface, with a parabolic temperature variation along the crystal-melt interface, and with an isothermal feed rod-melt interface. The ratio of the electrical conductivities of the liquid and solid is a key parameter. The azimuthal velocity is much larger than the radial or axial velocity. There is radially outward flow near the crystal-melt interface which should be beneficial for the mass transport of dopants and species.

scholarly journals Scaling Analysis of Semiconductor Crystal Growth from the Liquid Phase in an Axis Static Magnetic Field

2000 ◽  
Vol 41 (8) ◽  
pp. 1026-1033 ◽  
Author(s):  
Yuko Inatomi ◽  
Ayako Kato ◽  
Kengo Horiuchi ◽  
Aki Takada ◽  
Kazuhiko Kuribayashi
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Liquid Phase ◽  
Static Magnetic Field ◽  
Scaling Analysis ◽  
Semiconductor Crystal
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