Non-planar motion effect on vortex behavior over delta wings at high incidence

2001 ◽  
Author(s):  
X. Huang ◽  
T. Lui ◽  
E. Hanff
Keyword(s):  
Planar Motion ◽  
Delta Wings ◽  
High Incidence ◽  
Motion Effect

Non-planar aerodynamics of delta wings at high incidence

2001 ◽  
Author(s):  
T. Lui ◽  
X. Huang ◽  
E. Hanff
Keyword(s):  
Delta Wings ◽  
High Incidence

Effects of Reynolds number of the high-incidence flow over double-delta wings

1997 ◽  
Author(s):  
A. Fritzelas ◽  
M. Platzer ◽  
S. Hebbar ◽  
A. Fritzelas ◽  
M. Platzer ◽  
...  
Keyword(s):  
Reynolds Number ◽  
Delta Wings ◽  
High Incidence

Experimental investigations of the vortex flow on delta wings at high incidence

AIAA Journal ◽  
1992 ◽  
Vol 30 (4) ◽  
pp. 1027-1032 ◽  
Author(s):  
W. H. Stahl ◽  
M. Mahmood ◽  
A. Asghar
Keyword(s):  
Vortex Flow ◽  
Experimental Investigations ◽  
Delta Wings ◽  
High Incidence

Control of High-Incidence Vortical Flow on Double-Delta Wings Undergoing Sideslip

1997 ◽  
Vol 34 (4) ◽  
pp. 506-513 ◽  
Author(s):  
Sheshagiri K. Hebbar ◽  
Max F. Platzer ◽  
Wen-Huan Chang
Keyword(s):  
Vortical Flow ◽  
Delta Wings ◽  
High Incidence

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

Sign in / Sign up

Export Citation Format

Share Document