Effects of arcing on insulator surface charging condition in plasma environment

2000 ◽  
Author(s):  
Mengu Cho ◽  
Naoki Miyata ◽  
Masayuki Hitaka
Keyword(s):  
Insulator Surface ◽  
Plasma Environment ◽  
Surface Charging

Plasma Response to Jump of Insulator Surface Potential in Ionospheric Plasma Environment

2002 ◽  
Vol 39 (3) ◽  
pp. 400-408 ◽  
Author(s):  
Mengu Cho ◽  
Raju Ramasamy ◽  
Masayuki Hikita ◽  
Koji Tanaka ◽  
Susumu Sasaki
Keyword(s):  
Surface Potential ◽  
Ionospheric Plasma ◽  
Insulator Surface ◽  
Plasma Environment ◽  
Plasma Response

scholarly journals Characteristics plasma environment isolated conductor surface charging time domain

2013 ◽  
Vol 62 (14) ◽  
pp. 149401
Author(s):  
Cao He-Fei ◽  
Liu Shang-He ◽  
Sun Yong-Wei ◽  
Yuan Qing-Yun
Keyword(s):  
Time Domain ◽  
Plasma Environment ◽  
Surface Charging ◽  
Charging Time ◽  
Conductor Surface

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

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