Effects of nonequilibrium chemistry on the reference temperature method and Reynolds analogy

10.2514/3.553 ◽  
1994 ◽  
Vol 8 (2) ◽  
pp. 381-384 ◽  
Author(s):  
James D. Ott ◽  
John D. Anderson
1973 ◽  
Vol 2 (4) ◽  
pp. 201-204
Author(s):  
R. Camarero

A calculation procedure for the solution of two-dimensional and axi-symmetric laminar boundary layers in compressible flow has been developed. The method is an extension of the integral approach of Tani to include compressibility effects by means of a reference temperature. Arbitrary pressure gradients and wall temperature can be specified. Comparisons with experiments obtained for supersonic flows over a flat plate indicate that the method yields adequate results. The method is then applied to the solution of the boundary layer on a Basemann inlet.


1981 ◽  
Vol 103 (4) ◽  
pp. 613-616 ◽  
Author(s):  
A. J. Ghajar ◽  
J. D. Parker

A reference temperature method was developed by which heat transfer to fluids in the supercritical region under variable property conditions in laminar free convection on a vertical flat plate can be readily evaluated. Based on this method three generalized plots for Refrigerant-114, water, and carbon dioxide were developed. The results obtained with the reference temperature scheme showed good agreement with the existing experimental data and theoretical results for these three variable property fluids.


2018 ◽  
Author(s):  
Pourya Forooghi ◽  
Franco Magagnato ◽  
Bettina Frohnapfel

2005 ◽  
Vol 108-109 ◽  
pp. 181-186 ◽  
Author(s):  
Valentin V. Emtsev ◽  
Boris A. Andreev ◽  
Gagik A. Oganesyan ◽  
D.I. Kryzhkov ◽  
Andrzej Misiuk ◽  
...  

Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference temperature, and T= 600OC to 800OC are investigated in some detail. Compressive stresses of about P= 1 GPa lead to enhanced formation of Thermal Double Donors in materials annealed over a temperature range of T= 450OC – 600OC. It has been shown that the formation of thermal donors at T= 450OC under normal conditions and compressive stress is accompanied with loss of substitutional boron. In contrast, the concentration of the shallow acceptor states of substitutional boron in silicon annealed under stress at T≥ 600OC remains constant. An enhancement effect of thermal donor formation is gradually weakened at T≥ 700OC. The oxygen diffusivity sensitive to mechanical stress is believed to be responsible for the observed effects in heat-treated silicon.


Sign in / Sign up

Export Citation Format

Share Document