Flight Test Base Pressure Results for Sharp 8" Cones

AIAA Journal ◽  
1974 ◽  
Vol 12 (4) ◽  
pp. 555-557 ◽  
Author(s):  
RICHARD G. BATT
Keyword(s):  
AIAA Journal ◽  
1976 ◽  
Vol 14 (12) ◽  
pp. 1783-1785 ◽  
Author(s):  
Bruce M. Bulmer

AIAA Journal ◽  
1972 ◽  
Vol 10 (12) ◽  
pp. 1704-1705 ◽  
Author(s):  
BRUCE M. BULMER

Author(s):  
P. Xu ◽  
E. J. Kirkland ◽  
J. Silcox

Many studies of thin metal film growth and the formation of metal-semiconductor contacts have been performed using a wide range of experimental methods. STEM annular dark field imaging could be an important complement since it may allow direct imaging of a single heavy atom on a thin silicon substrate. This would enable studies of the local atomic arrangements and defects in the initial stage of metal silicide formation.Preliminary experiments were performed in an ultra-high vacuum VG HB501A STEM with a base pressure of 1 × 10-10 mbar. An antechamber directly attached to the microscope for specimen preparation has a base pressure of 2×l0-10 mbar. A thin single crystal membrane was fabricated by anodic etching and subsequent reactive etching. The specimen was cleaned by the Shiraki method and had a very thin oxide layer left on the surface. 5 Å of gold was deposited on the specimen at room temperature from a tungsten filament coil monitored by a quartz crystal monitor.


1970 ◽  
Author(s):  
Rodney C. Wingrove ◽  
Frederick G. Edwards ◽  
Armando E. Lopez
Keyword(s):  

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