Determination of Reflectance Function for Aluminum and Stainless-Steel Foil Surfaces

2003 ◽  
Vol 17 (4) ◽  
pp. 434-441 ◽  
Author(s):  
Mauricio A. Sanchez ◽  
William H. Sutton
Keyword(s):  
Stainless Steel ◽  
Stainless Steel Foil ◽  
Reflectance Function

Amorphous Silicon TFTs on Steel-Foil Substrates

1996 ◽  
Vol 424 ◽  
Author(s):  
S. D. Theiss ◽  
S. Wagner
Keyword(s):  
Stainless Steel ◽  
Leakage Currents ◽  
Action Current ◽  
Insulating Layer ◽  
Stainless Steel Foil ◽  
Current Voltage ◽  
Stainless Steel Foils ◽  
Steel Foils ◽  
Current Behavior

AbstractWe describe the successful fabrication of device-quality a-Si:H thin-film transistors (TFTs) on stainless-steel foil substrates. These TFTs demonstrate that transistor circuits can be made on a flexible, non-breakable substrate. Such circuits could be used in reflective or emissive displays, and in other applications that require rugged macroelectronic circuits.Two inverted TFT structures have been made, using 200 gim thick stainless steel foils with polished surfaces. In the first structure we used the substrate as the gate and utilized a homemade mask set with very large feature sizes: L = 45 μm; W = 2.5 mm. The second, inverted staggered, structure used a 9500 Å a-SiNx:H passivating/insulating layer deposited on the steel to enable the use of isolated gates. For this structure we used a mask set which is composed of TFTs with much smaller feature sizes. Both TFT structures exhibit transistor action. Current-voltage characterization of the TFTs with the inverted staggered structure shows typical on/off current ratios of 107, leakage currents on the order of 10-12 A, good linear and saturation current behavior, and channel mobilities of 0.5 cm2/V·sec. These characteristics clearly identify the TFTs grown on stainless steel foil as being of device quality.

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