Combining Static and Rotating Magnetic Fields During Modified Vertical Bridgman Crystal Growth

2007 ◽  
Vol 21 (4) ◽  
pp. 736-743 ◽  
Author(s):  
X. Wang ◽  
N. Ma ◽  
D. F. Bliss ◽  
G. W. Iseler ◽  
P. Becla
2006 ◽  
Vol 129 (2) ◽  
pp. 241-243 ◽  
Author(s):  
X. Wang ◽  
N. Ma

During the vertical Bridgman process, a single semiconductor crystal is grown by the solidification of an initially molten semiconductor contained in an ampoule. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper treats the flow of a molten semiconductor and the dopant transport during the vertical Bridgman process with a periodic transverse or rotating magnetic field. The frequency of the externally applied magnetic field is sufficiently low that this field penetrates throughout the molten semiconductor. Dopant distributions in the crystal are presented.


2006 ◽  
Vol 415 (1-2) ◽  
pp. 251-256 ◽  
Author(s):  
Satoru Furuyama ◽  
Tsutomu Iida ◽  
Shinsuke Matsui ◽  
Masayasu Akasaka ◽  
Keishi Nishio ◽  
...  

1997 ◽  
Vol 180 (3-4) ◽  
pp. 410-421 ◽  
Author(s):  
R.U. Barz ◽  
G. Gerbeth ◽  
U. Wunderwald ◽  
E. Buhrig ◽  
Yu.M. Gelfgat

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