scholarly journals CALCULATION METHOD FOR FIN-AND-TUBE HEAT EXCHANGERS OPERATING WITH NONUNIFORM AIRFLOW

2019 ◽  
Author(s):  
PAOLO BLECICH ◽  
ANICA TRP ◽  
KRISTIAN LENIÆ
Keyword(s):  
Calculation Method ◽  
Heat Exchangers

Novel Multi-Stream Plate Exchanger under High Pressure-Structure and its Design Method

2014 ◽  
Vol 1061-1062 ◽  
pp. 658-661
Author(s):  
Yan Peng Qu ◽  
Wei Qiang Wang ◽  
Yan Liu ◽  
Zhi Yong Xu
Keyword(s):  
High Pressure ◽  
Calculation Method ◽  
Heat Exchangers ◽  
Simple Structure ◽  
High Efficiency ◽  
Design Method ◽  
General Characteristic ◽  
The Novel ◽  
Ansys Software ◽  
Process Calculation

The general characteristic of current plate heat exchangers is first summarized in this paper. A new plate exchanger of multi-stream under high pressure is proposed, which is composed of the plates with opening the gyroidal flow-trough along the radius and the shell, it has some advantages, such as simple structure, high efficiency and available under high pressure. We introduce the structure of the plate, the shell and the slotting types. In addition, the process calculation method of heat-transfer is given and the strength calculation method for the key components of the novel exchanger is also presented. According to the stress analysis to the plate wall with ANSYS software, we have proved the reliability of the calculation method.

Determination of creep mechanisms in various silicon carbides via TEM

1986 ◽  
Vol 44 ◽  
pp. 484-487
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis
Keyword(s):  
Heat Exchangers ◽  
Sintered Material ◽  
Polycrystalline Material ◽  
Chemical Vapor ◽  
Graphite Substrate ◽  
Second Phase ◽  
Reaction Bonding ◽  
Creep Mechanisms ◽  
Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

Back-Calculation Method of Subgrade Modulus Based on Traffic Speed Deflectometer

CICTP 2020 ◽  
2020 ◽  
Author(s):  
Guoshuai Zang ◽  
Haizhu Lu ◽  
Guanglai Jin ◽  
Zhixiang Zhang
Keyword(s):  
Calculation Method ◽  
Back Calculation ◽  
Subgrade Modulus ◽  
Traffic Speed

Borehole Heat Exchangers in aquifers: simulation of the grout material impact

2016 ◽  
Vol 41 ◽  
pp. 268-271
Author(s):  
Luca Alberti ◽  
Adriana Angelotti ◽  
Matteo Antelmi ◽  
Ivana La Licata
Keyword(s):  
Heat Exchangers ◽  
Borehole Heat Exchangers

Dramatic efficiency gains through improved heat exchangers: the case of cassava flash drying in Nigeria

Food Chain ◽  
2015 ◽  
Vol 5 (1-2) ◽  
pp. 91-104 ◽  
Author(s):  
Andrew Marchant ◽  
Andrew Graffham ◽  
Lateef Sanni ◽  
Idowu Adeoya
Keyword(s):  
Heat Exchangers ◽  
Efficiency Gains ◽  
Flash Drying
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