scholarly journals Determination of growth kinetics and size dependent structural, morphological, optical characteristics of sol-gel derived silica nanoparticles in silica matrix

2019 ◽  
Vol 37 (1) ◽  
pp. 16-24
Author(s):  
Bengü Özuğur Uysal ◽  
Fatma Z. Tepehan
Keyword(s):  
Thin Films ◽  
Silica Nanoparticles ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Silica Film ◽  
Silica Sol ◽  
Nano Silica ◽  
Silica Films ◽  
Annealing Temperatures ◽  
Silica Thin Films

AbstractNanocomposite silica thin films made using the sol-gel method were studied. The nano-silica films were prepared using a mixture of tetraethyl orthosilicate (TEOS), deionized water, ethanol, and ammonia solution. To control the growth of the particles inside the film, the nanocomposite silica film was prepared using a mixture of the nano-silica sol and the silica sol. The change in the particle size with the heat treatment temperature ranging from 450 °C to 1100 °C was investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), NKD (refractive index-N, extinction coefficient-K, and thickness-D) and ultraviolet-visible (UV-Vis) spectrophotometry were used for characterization purposes. The XRD studies showed that the nano-silica thin films were amorphous at all annealing temperatures except for 1100 °C. The_-cristobalite crystal structure formed at the annealing temperature of 1100 °C. Optical parameters, such as refractive indices and extinction coefficients, were obtained using the NKD analyzer with respect to the annealing temperature of the films. The activation energy and enthalpy of the nanocomposite silica film were evaluated as 22.3 kJ/mol and 14.7 kJ/mol, respectively. The cut-off wavelength values were calculated by means of extrapolation of the absorbance spectra estimated using the UV-Vis spectroscopy measurements. A red shift in the absorption threshold of the nanocomposite silica films indicated that the size of the silica nanoparticles increased with an increase of the annealing temperatures from 450 °C to 900 °C, and this confirms the quantum confinement effect in the nanoparticles.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Effect of Annealing Treatments on Mg(Zr0.05Ti0.95)O3 Thin Films by Sol-Gel Method

2011 ◽  
Vol 216 ◽  
pp. 518-522
Author(s):  
Ching Fang Tseng ◽  
Chun Hung Lai ◽  
Chih Wen Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Annealing Temperatures ◽  
Polycrystalline Microstructure ◽  
Deposited Films

Dielectric, Optical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A dielectric constant of 7.4 and an optical bandgap of 3.7 were obtained for the prepared films.

Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method

2011 ◽  
Vol 312-315 ◽  
pp. 1027-1031
Author(s):  
Mohd Noor Asiah ◽  
Mat Zain Basri ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electrical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Nanostructured Titanium ◽  
Annealing Temperatures ◽  
Vis Spectroscopy

This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.

Influence of Thermal Annealing on the Properties of Sol-Gel-Derived Al:ZnO Thin Films

2015 ◽  
Vol 1109 ◽  
pp. 186-190
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
M.Z. Musa ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Film Growth ◽  
Sol Gel ◽  
Visible Region ◽  
Dip Coating ◽  
Granular Structure ◽  
Annealing Temperatures ◽  
Average Transmittance

Aluminium doped zinc oxide (Al:ZnO) thin films were prepared by a sol-gel dip coating process. In particular, the case of change of thermal annealing temperature was studied. The characterisation of the films by various analytical methods shows a correlation between thermal annealing temperature and characteristic of the film. The influence of the thermal annealing temperature on the film growth can be clearly observed. At lower thermal annealing temperatures, granular structure dominates the films, while the films feature a bigger grain growth at higher annealing temperatures. All films exhibited an average transmittance of greater than 85% in the visible region, with absorption edges at ~380 nm.

Structure and Characteristics of ZrO2 Dielectric Thin Films by Sol-Gel Technique

2014 ◽  
Vol 602-603 ◽  
pp. 767-770 ◽  
Author(s):  
Ching Fang Tseng ◽  
Chiu Yun Chen ◽  
Pei Wen Huang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Dielectric Thin Films ◽  
Dielectric Characteristics ◽  
Impedance Analyzer ◽  
Annealing Temperatures ◽  
Gel Technique

Dielectric properties and microstructures of ZrO2thin films prepared by the sol-gel method at different annealing temperatures have been investigated. All films exhibited ZrO2(111) highly orientation perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. Dielectric properties of the Ag/ZrO2/Ag/Si structure were measured by using HP 4192 Impedance Analyzer and Agilent 4155 Semiconductor Parameter Analyzer. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.

Luminescent Silica Thin Films

2007 ◽  
Vol 1007 ◽  
Author(s):  
Marie-Alexandra G. G. Neouze ◽  
Ulrich Schubert
Keyword(s):  
Thin Films ◽  
Hybrid Material ◽  
Sol Gel ◽  
Fluoride Ions ◽  
Silica Films ◽  
Organic Hybrid ◽  
Silica Thin Films ◽  
Acidic Conditions ◽  
Sol Gel Synthesis ◽  
Organic Hybrid Material

ABSTRACTLuminescent silica films were prepared by sol-gel synthesis under acidic conditions in the presence of fluoride ions. Luminescence was observed for both the pure inorganic film or film of a silica-based inorganic-organic hybrid material. Powders prepared from the same precursor mixtures were only fluorescent after calcination.

Effect of Annealing Temperatures and Pre-Heating on the Characteristics of a Nanocrystalline Zno Thin Film Prepared by the Sol-Gel Dip-Coating Method

2008 ◽  
Vol 63 (7-8) ◽  
pp. 440-444 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Annealing Temperatures ◽  
Coating Method ◽  
Dip Coating Method

For effectively fabricating nanocrystalline ZnO thin films by the sol-gel method, the relationships between the temperature of the heat treatment and the quality of the ZnO thin films was observed. The decomposition of the sol was analyzed by TG-DTA. The orientation of the c-axis of the ZnO thin film was identified by XRD. The morphology was observed and estimated by SEM. The experimental results did show that the orientation of the c-axis is determined by the pre-heating and annealing temperatures, and that the grain size and roughness of the ZnO thin films are mainly influenced by the annealing temperature. A qualified ZnO thin film was prepared by using a sol-gel with a preheating temperature of 275 °C for 10 min and an annealing temperature of 550 °C for 60 min.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

Influence of annealing temperature on the structural and anti-corrosion characteristics of sol–gel derived, spin-coated thin films

2014 ◽  
Vol 40 (2) ◽  
pp. 2885-2890 ◽  
Author(s):  
E. Salahinejad ◽  
M.J. Hadianfard ◽  
D. Vashaee ◽  
L. Tayebi
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel
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