scholarly journals Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN

2015 ◽  
Vol 66 (6) ◽  
pp. 344-347
Author(s):  
Jozef Liday ◽  
Peter Vogrinčič ◽  
Viliam Vretenár ◽  
Mário Kotlár ◽  
Marián Marton ◽  
...  

AbstractDue to their properties, carbon nanotubes and reduced graphene oxide are highly promising materials for obtaining low-resistance ohmic contacts to p-GaN with good optical transparency for visible light. In this contribution we designed a combination of these two materials, along with a cap layer, to be used as structures for ohmic contacts to p-GaN. Carbon nanotube (CNT) and graphene oxide (GO) layers were deposited by spray coating using an off-the-shelf airbrush on p-GaN layers. The metallic layers of Au/Pd were vapour deposited. The structures for ohmic contacts were prepared in two configurations, namely as Au/Pd/r-GO/CNT/p-GaN and Au/Pd/CNT/r-GO/CNT/p-GaN. The prepared structures provide a low resistivity ohmic contact after subsequent annealing in air ambient at 600 °C for 3 minutes. The contact containing the sandwich CNT/r-GO/CNT interstructure exhibits lower values of contact resistance in comparison with the r-GO/CNT interstructure.

2020 ◽  
Vol 56 (28) ◽  
pp. 4003-4006 ◽  
Author(s):  
Chengchao Wang ◽  
Yue Yang ◽  
Ruijun Li ◽  
Datong Wu ◽  
Yong Qin ◽  
...  

Polyaniline is covalently functionalized onto the RGO surface in the presence of carbon nanotubes and used for high performance supercapacitors.


2020 ◽  
Vol 56 (46) ◽  
pp. 6209-6212 ◽  
Author(s):  
Soraya Rahpeima ◽  
Essam M. Dief ◽  
Chandramalika R. Peiris ◽  
Stuart Ferrie ◽  
Alex Duan ◽  
...  

Electrochemically reduced graphene oxide, chemically bonded to silicon, lowers the contact resistance to metals and enables a tunable ohmic contact.


Catalysts ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 689 ◽  
Author(s):  
Beata Dembinska ◽  
Agnieszka Zlotorowicz ◽  
Magdalena Modzelewska ◽  
Krzysztof Miecznikowski ◽  
Iwona A. Rutkowska ◽  
...  

Hybrid systems composed of the reduced graphene oxide-supported platinum and multiwalled carbon nanotube-supported iridium (both noble metals utilized at low loadings on the level of 15 and ≤2 µg cm−2, respectively) were considered as catalytic materials for the reduction of oxygen in acid media (0.5-mol dm−3 H2SO4). The electrocatalytic activity toward reduction of oxygen and formation of hydrogen peroxide intermediate are tested using rotating ring–disk electrode (RRDE) voltammetric experiments. The efficiency of the proposed catalytic systems was also addressed by performing galvanodynamic measurements with gas diffusion electrode (GDE) half-cell at 80 °C. The role of carbon nanotubes is to improve charge distribution at the electrocatalytic interface and facilitate the transport of oxygen and electrolyte in the catalytic systems by lowering the extent of reduced graphene oxide restacking during solvent evaporation. The diagnostic electrochemical experiments revealed that—in iridium-containing systems—not only higher disk currents, but also somehow smaller ring currents are produced (when compared to the Ir-free reduced graphene oxide-supported platinum), clearly implying formation of lower amounts of the undesirable hydrogen peroxide intermediate. The enhancement effect originating from the addition of traces of iridium (supported onto carbon nanotubes) to platinum, utilized at low loading, may originate from high ability of iridium to induce decomposition of the undesirable hydrogen peroxide intermediate.


2015 ◽  
Vol 65 (6) ◽  
pp. 386-389 ◽  
Author(s):  
Liday Jozef ◽  
Vogrinčič Peter ◽  
Vretenár Viliam ◽  
Kotlár Mário ◽  
Marton Marián ◽  
...  

Abstract We have designed and verified a new structure for ohmic contacts to p-GaN based on a layer of carbon nanotubes (CNT), reduced graphene oxide (r-GO) and metallic layers of Cr, Pd and Au, namely in configurations Au/Cr/r-GO/CNT/p-GaN and Au/Pd/r-GO/CNT/p-GaN. The effects have been studied of the annealing temperature and the gas ambient upon the electrical properties of the contacts. Annealing of the Au/Pd/r-GO/CNT/p-GaN structure in air at 500°C for 1 minute resulted in linear I - V curves measured between planar electrodes on the p-GaN. Hence, addition of r-GO to the CNT interlayer between p-GaN and the metallization layer is a highly promising procedure for further improvements of the ohmic contacts to p-GaN.


Sign in / Sign up

Export Citation Format

Share Document