scholarly journals Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

2015 ◽  
Vol 66 (4) ◽  
pp. 226-230
Author(s):  
Zdeněk Chobola ◽  
Miroslav Luňák ◽  
Jiří Vaněk ◽  
Eduard Hulicius ◽  
Ivo Kusák

Abstract The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.

2004 ◽  
Vol 43 (No. 12A) ◽  
pp. L1555-L1557 ◽  
Author(s):  
Ru-Shang Hsiao ◽  
Jyh-Shyang Wang ◽  
Kun-Feng Lin ◽  
Li Wei ◽  
Hui-Yu Liu ◽  
...  

1996 ◽  
Vol 35 (Part 2, No. 2A) ◽  
pp. L150-L153 ◽  
Author(s):  
Yoshihiko Hanamaki ◽  
Yoshiyuki Watanuki ◽  
Hidefumi Akiyama ◽  
Tetsuya Takeuchi ◽  
Nagaatsu Ogasawara ◽  
...  

2001 ◽  
Vol 227-228 ◽  
pp. 324-328
Author(s):  
M Saarinen ◽  
N Xiang ◽  
V Vilokkinen ◽  
P Melanen ◽  
S Orsila ◽  
...  

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