scholarly journals Measurement of Residual Stress Distribution in Sputtered Cu Thin Films by X-Ray Method

2009 ◽  
Vol 58 (7) ◽  
pp. 575-580
Author(s):  
Yoshiaki AKINIWA ◽  
Hidehiko KIMURA ◽  
Taku SAKAUE
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Stress Distribution ◽  
Residual Stress Distribution ◽  
Ray Method ◽  
X Ray

X-Ray Measurement of Residual Stress Distribution in Sputtered Cu Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 1649-1654 ◽  
Author(s):  
Yoshiaki Akiniwa ◽  
Taku Sakaue
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Stress Distribution ◽  
Residual Stress Distribution ◽  
The Other ◽  
X Ray ◽  
Maximum Value ◽  
Other Hand ◽  
Target Power

Three kinds of copper thin films were fabricated by RF-magnetron sputtering. The target power was selected to be 10 and 150 W to change the properties of the films. Thin glass sheet was used as a substrate. For the target power of 150 W, the deposition time was selected to be 7 and 40 min. The thickness was 0.6 μm and 2.9 μm, and the grain size measured was 243 nm and 450 nm, respectively. The grain size of thicker film was larger than that of thinner one. On the other hand, for the target power of 10 W, the thickness and grain size were 2.4 μm and 54 nm, respectively. The grain size depends on the target power. The residual stress distribution in the films was measured by X-ray method. Several methods such as the grazing incidence X-ray diffraction method, the constant penetration depth method and the conventional sin2ψ method were adopted. The measured weighted average stress increased with increasing depth. After taking the maximum value at about 0.3 μm from the surface, the value decreased with increasing depth. The stress distribution near the surface in the films deposited at 150 W was almost identical irrespective of thickness. On the other hand, for the target power of 10 W, the stress distribution shifted to compression side. The reason could be explained by the effect of the thermal residual stress. The real stress distribution was estimated by using the optimization technique. The stress took the maximum value at 0.5 μm from the surface, and was compressive near the substrate. .

Depth-dependent defect and residual stress distribution in magnetron sputtered MoN:Cu nanocomposite films by x-ray microdiffraction

2006 ◽  
Vol 977 ◽  
Author(s):  
Gang Chen ◽  
Dileep Singh ◽  
Osman Eryilmaz ◽  
Ali Erdemir ◽  
Jules Routbort ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress Distribution ◽  
High Hardness ◽  
Residual Stress Distribution ◽  
Nanocomposite Films ◽  
Structure Property ◽  
Nanocrystalline Films ◽  
Low Friction ◽  
X Ray ◽  
Property Relations

AbstractWe have developed a synchrotron-based x-ray microdiffraction technique for measuring depth-resolved residual stress distribution in nanocrystalline films with submicron resolution [1]. In this study, we further refined this technique and applied it to low-friction and high-hardness Cu-doped MoN films. These magnetron sputtered nanocomposites films consist of MoN, Mo2N, and Cu phases, whose ratio depends on Cu concentration. By using the microdiffraction technique, we discovered that both the deviatoric and the hydrostatic components of the residual stresses depend on the film depth (Fig.1). The former indicates depth-dependent distribution of biaxial stresses, while the latter implies depth-dependent defect distribution, which also depends on Cu concentration. Thermal annealing of the nanocomposite film partially relives the stress, significantly reduces the lattice spacing, and eliminates the defect gradients. These results suggest that interstitial N may play an important role in the lattice expansion and the defect gradients formed during the non-equilibrium sputtering process. Our study provides fresh insights into understanding the structure-property relations in the magnetron sputtered MoN:Cu nanocomposites films.

Measurement of Residual Stress Distribution of Ground Silicon Nitride by Glancing Incidence X-ray Diffraction Technique

1995 ◽  
Vol 39 ◽  
pp. 331-338
Author(s):  
Yoshihisa Sakaida ◽  
Keisuke Tanaka ◽  
Shintaro Harada
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Stress Distribution ◽  
Stress Measurement ◽  
Scintillation Counter ◽  
Ground Surface ◽  
Residual Stress Distribution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Very High

A new method of X-ray stress measurement was proposed to estimate non-destructively the steep residual stress distribution in the surface layer of ground Si3N4. We assumed an exponential decrement of the residual stress near the ground surface, and derived a formula for the lattice strain as a function of sin2Ψ. In the experiments, the diffraction angles were measured on the ground surface for a widest possible range of sin2ѱ using an Ω-goniometer. In order to measure the diffraction angle at very high sin η values, a scintillation counter was located on the -η side and an incident X-ray beam impinged on the ground surface with a very low angle from the +η side using the glancing incidence X-ray diffraction technique. A strong non-linearity was found in the 20-sin2ѱ diagrams especially at very high ѱ -angles. From the analysis of non-linearity, the stress distribution in the surface layer was determined. Tine residual stress took the maximum compression of 2 GPa at a depth of about 0.5 μm from the surface, and then diminished to zero at about 25 μm in depth. In the close vicinity of the ground surface, the compressive residual stress was relieved because of both the surface roughness and microcracking induced during the grinding process.

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