Annealing Effect on Microstructure and ElectricalCharacteristics of n-ZnO/p-Si HetrojunctionDiode Fabricated by RF Sputtering Process

2020 ◽  
Vol 07 (01) ◽  
pp. 1-5
Author(s):  
VN Shukla ◽  
Keyword(s):  
Rf Sputtering ◽  
Annealing Effect

scholarly journals Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - annealing effect on the Er emission

2010 ◽  
pp. NA-NA
Author(s):  
M. F. Cerqueira ◽  
T. Monteiro ◽  
M. J. Soares ◽  
A. Kozanecki ◽  
P. Alpuim ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Nanocrystalline Silicon ◽  
Annealing Effect ◽  
Silicon Thin Films ◽  
Erbium Doped

The Annealing Effect of Spin-Valve-Like Ferromagnetic Tunnel Junction

1999 ◽  
Vol 23 (1_2) ◽  
pp. 49-51 ◽  
Author(s):  
H. Kikuchi ◽  
K. Kobayashi ◽  
M. Sato
Keyword(s):  
Tunnel Junction ◽  
Spin Valve ◽  
Annealing Effect

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Optical Gap ◽  
Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

Annealing effect on the generation of dual mode acoustic waves in inclined ZnO films

Ultrasonics ◽  
2013 ◽  
Vol 53 (7) ◽  
pp. 1264-1269 ◽  
Author(s):  
H.F. Pang ◽  
Y.Q. Fu ◽  
R. Hou ◽  
K.J. Kirk ◽  
D. Hutson ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Annealing Effect ◽  
Zno Films ◽  
Dual Mode
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