scholarly journals Low Cost Ultrasonic Vapour Pyrolysis Method for Boron Doped Cadmium Sulphide Thin Film

2019 ◽  
Vol 9 (1) ◽  
pp. 1-8
Author(s):  
Dinesh Borole et al., Dinesh Borole et al., ◽  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Cadmium Sulphide ◽  
Boron Doped ◽  
Pyrolysis Method

Transmission Electron Microscopy of oriented Co84Cr14Ta2 thin films for longitudinal magnetic recording

1991 ◽  
Vol 49 ◽  
pp. 756-757
Author(s):  
T. P. Nolan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Cost ◽  
Low Noise ◽  
Information Storage ◽  
High Coercivity ◽  
Magnetic Alloy ◽  
Magnetic Media ◽  
Transmission Electron

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

A low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applications

2018 ◽  
Vol 221 ◽  
pp. 216-219 ◽  
Author(s):  
Y. Yusoff ◽  
P. Chelvanathan ◽  
N. Kamaruddin ◽  
Md. Akhtaruzzaman ◽  
N. Amin
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Low Cost ◽  
Vapor Phase Epitaxy ◽  
Single Source ◽  
Photovoltaic Applications

B- and P-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor

2006 ◽  
Vol 320 ◽  
pp. 99-102 ◽  
Author(s):  
Kazuki Tajima ◽  
Woosuck Shin ◽  
Maiko Nishibori ◽  
Norimitsu Murayama ◽  
Toshio Itoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Oxidation ◽  
Exothermic Reaction ◽  
High Sensitivity ◽  
Hydrogen Sensor ◽  
Thermoelectric Effect ◽  
Boron Doped ◽  
Reliable Monitoring ◽  
Ppm Level ◽  
Pt Catalyzed

Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Synthesis of Cu2MnSnS4 thin film deposited on seeded fluorine doped tin oxide substrate via a green and low-cost electrodeposition method

2017 ◽  
Vol 191 ◽  
pp. 186-188 ◽  
Author(s):  
Jiejin Yu ◽  
Hongmei Deng ◽  
Jiahua Tao ◽  
Leilei Chen ◽  
Huiyi Cao ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Low Cost ◽  
Electrodeposition Method ◽  
Oxide Substrate
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