Ultra-High Modulation Efficiency and Polarization-Insensitive Cadmium Oxide-Silicon Based Electro-Absorption Modulator

2019 ◽  
Author(s):  
Yin Xu ◽  
Feng Li ◽  
Zhe Kang ◽  
Xianting Zhang ◽  
Dongmei Huang ◽  
...  
Keyword(s):  
Cadmium Oxide ◽  
High Modulation ◽  
Polarization Insensitive ◽  
Silicon Based

scholarly journals Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 157 ◽  
Author(s):  
Yin Xu ◽  
Feng Li ◽  
Zhe Kang ◽  
Dongmei Huang ◽  
Xianting Zhang ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Modulation Depth ◽  
Polarization State ◽  
Broad Bandwidth ◽  
Graphene Layers ◽  
Silicon Waveguide ◽  
High Modulation ◽  
Polarization Insensitive ◽  
On Chip ◽  
Silicon Based

Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is formed by leveraging multi-deposited and multi-transferred methods to enable light interaction with graphene layers in its intense field distribution region instead of the commonly used weak cladding region, thus resulting in enhanced light–graphene interaction. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation is achieved with a modulation efficiency (ME) of ~1.11 dB/µm for both polarizations (ME discrepancy < 0.006 dB/µm), which outperforms that of previous reports. Based on this excellent modulation performance, we designed a hybrid graphene-silicon-based EAM with a length of only 20 µm. The modulation depth (MD) and insertion loss obtained were higher than 22 dB and lower than 0.23 dB at 1.55 µm, respectively, for both polarizations. Meanwhile, its allowable bandwidth can exceed 300 nm by keeping MD more than 20 dB and MD discrepancy less than 2 dB, simultaneously, and its electrical properties were also analyzed. Therefore, the proposed device can be applied in on-chip optical interconnects.

scholarly journals Silicon based polarization insensitive filter for WDM-PDM signal processing

2013 ◽  
Vol 21 (22) ◽  
pp. 25727 ◽  
Author(s):  
Yaguang Qin ◽  
Yu Yu ◽  
Jinghui Zou ◽  
Mengyuan Ye ◽  
Lei Xiang ◽  
...  
Keyword(s):  
Signal Processing ◽  
Polarization Insensitive ◽  
Silicon Based

scholarly journals Polarization Independent Achromatic Meta-Lens Designed for the Terahertz Domain

2020 ◽  
Vol 8 ◽  
Author(s):  
Yufei Gao ◽  
Jianqiang Gu ◽  
Ridong Jia ◽  
Zhen Tian ◽  
Chunmei Ouyang ◽  
...  
Keyword(s):  
Focal Length ◽  
Chromatic Aberration ◽  
Amplitude Distribution ◽  
Full Width ◽  
Half Maximum ◽  
Transmission Amplitude ◽  
Planar Lens ◽  
Polarization Insensitive ◽  
Silicon Based ◽  
Polarization Independent

In recent years, metasurface-based focusing elements have gradually become an indispensable type of terahertz lenses. However, the meta-lens often suffers from chromatic aberration due to the intrinsic dispersion of each element, especially in the broadband application scenarios. In this paper, we design and demonstrate a silicon-based achromatic meta-lens working from 0.6 to 1.0 THz, which is polarization insensitive because of the adopted symmetrical structures. The simulated focal length and the full width at half maximum (FWHM) of the foci at different frequencies prove the achromatic behavior of our meta-lens compared with the chromatic counterpart. We also show that the focus shift incongruence of our design originates from the transmission amplitude distribution of the meta-lens. This article not only provides an achromatic planar lens working at terahertz domain but also reveals the importance of the amplitude distribution in the achromatic metasurface design.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based
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