scholarly journals Resistance Switching Effect in Octahedral framework oxide

2021 ◽  
Vol 5 (2) ◽  
Author(s):  
Y. Gagou ◽  
B. Allouche ◽  
P. Saint-Gregoire ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Tungsten Bronze ◽  
Random Access ◽  
Threshold Value ◽  
Resistance Switching ◽  
Electric Transport ◽  
Experimental Conditions ◽  
Tetragonal Tungsten Bronze ◽  
Large Hysteresis ◽  
Schottky Type

Resistive Random-Access Memories (ReRAM) are an alternative way to create new memory devices. This is physically possible due to the existence in the material, of two resistive states clearly discreditable, as a function of voltage value and polarity first parameter under control to pass from one state to another one. However, the mechanism of the resistance switching is not simple and is under debate. We present in the present chapter all the factors entering in the switching process in tetragonal tungsten bronze (TTB) type structure oxide thin films deposited by PLD technique onto MgO or STO substrates. Results show that GdK2Nb5O15 (GKN) thin films deposited on MgO and STO substrates are resistively switchable. It was found that the nature of the substrate strongly affects the resistance ratio: GKN on SRO/LSCO/MgO showed a large hysteresis compared to GKN on SRO/STO. Substrate effect and oxygen vacancy on resistance switching in GKN thin film were studied in the same experimental conditions. The study of resistance switching in the GKN/MgO and GKN/STO thin films has confirmed that for low voltages, below the threshold value of 1.3 V, the electric transport is dominated by the formation of a Schottky type barrier, which allows a minimum leakage current. Resistance switching in GKN is attributed to the oxygen vacancies migration which can be controlled by the substrate or the frequency sweep.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

Synthesis of Sr2KNb5O15 Thin Films by Chemical Solution Deposition Method

1999 ◽  
Vol 14 (4) ◽  
pp. 1495-1502 ◽  
Author(s):  
Wataru Sakamoto ◽  
Toshinobu Yogo ◽  
Takae Kuroyanagi ◽  
Shin-ichi Hirano
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Tungsten Bronze ◽  
Precursor Solution ◽  
Fused Silica ◽  
Deposition Method ◽  
Chemical Solution ◽  
Tetragonal Tungsten Bronze ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

Crack-free and transparent Sr2KNb5O15 (SKN) thin films have been synthesized by the chemical solution deposition method. A homogeneous and stable precursor solution was prepared via controlling the reaction of metal alkoxides. SKN precursor was found to be the complex alkoxide between Sr[Nb(OEt)6]2 and KNb(OEt)6 with high structural symmetry. SKN powders and thin films on fused silica substrates directly crystallized to the polycrystalline tetragonal tungsten bronze phase at 600 °C. Highly oriented SKN thin films with the tetragonal tungsten bronze phase were fabricated on MgO(100) and Pt(100)/MgO(100) substrates. Two crystal lattice planes of SKN were intergrown at an orientation of 18.5° on MgO(100). The dielectric constant of SKN thin films on Pt(100)/MgO(100) was about 590 at 20 °C at 1 kHz.

Preparation and characterization of nanocrystalline potassium lithium niobate powders and films

2001 ◽  
Vol 16 (12) ◽  
pp. 3609-3613 ◽  
Author(s):  
H. X. Zhang ◽  
C. H. Kam ◽  
Y. Zhou ◽  
X. Q. Han ◽  
S. D. Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Lithium Niobate ◽  
Near Infrared ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Ambient Atmosphere ◽  
Tetragonal Tungsten Bronze ◽  
Raman Scattering Spectroscopy ◽  
Infrared Wavelength ◽  
Optical Modes

Potassium lithium niobate (KLN) powders and thin films were prepared from metalorganic compounds through the sol-gel process. A homogeneous and stable KLN precursor was synthesized by mixing the metal ethoxides. Powder gels were obtained through the hydrolysis of the solution by exposing it to the ambient atmosphere. Thin films were deposited on Si, SiO2/Si, and fused quartz by a spin coating technique. The pyrolysis and crystallization of KLN powders and films were investigated through the methods of differential thermal analysis, thermogravimetric analysis, x-ray diffraction, and Raman scattering spectroscopy. The results revealed that both KLN powders and films could crystallize into a tetragonal tungsten–bronze-type phase with appropriate annealing. Optical studies indicated that the films were highly transparent in the visible–near-infrared wavelength range and could support optical modes.

Crystal Structure of Red Lead Titanate Thin Films

1997 ◽  
Vol 11 (26n27) ◽  
pp. 1181-1187
Author(s):  
L. A. Bursill ◽  
J. L. Peng ◽  
B. Jiang ◽  
X. Li
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Lead Titanate ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Tetragonal Tungsten Bronze ◽  
Transmission Electron ◽  
Red Lead ◽  
Hydrolysis Of ◽  
Perovskite Type

Orange-red lead titanate thin films are examined by high-resolution transmission electron microscopy and diffraction. It is remarkable that the structure is based on that of tetragonal-tungsten-bronze (TTB) rather than perovskite-type. The chemical basis for this result is examined, it is deduced that the TTB structure is stabilized by inclusion of hydroxyl ions during synthesis by a sol–gel route involving hydrolysis of n-Butyl titanate.

Dielectric Performance of (Pb1-xSrx)Nb2O6-NaNbO3 Thin Film Materials System: Substitution Effects

2017 ◽  
Vol 898 ◽  
pp. 1699-1704
Author(s):  
Fei Hu Tan ◽  
Hong Bin Zhao ◽  
Qing Meng Zhang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Tungsten Bronze ◽  
Breakdown Field ◽  
Substitution Effects ◽  
Tetragonal Tungsten Bronze ◽  
Dielectric Thin Films ◽  
Dielectric Performance ◽  
Breakdown Field Strength

(Pb1-xSrx)Nb2O6-NaNbO3 (PSNN) dielectric thin films, x changed from 0.4 to 0.6, were deposited by pulsed laser deposition (PLD) technology on p+-Si substrate. Post-annealing was performed on the dielectric thin films at 800oC in oxygen atmosphere for 10 minutes. The Sr-composition dependence of the dielectric performance in this thin film materials system was investigated. The results indicated that dielectric constant changing with Sr-composition in the PSNN thin films showed the shape of a parabola, resulting from the morphotropic phase boundary (MPB) effect caused by the existence of both orthorhombic and tetragonal tungsten bronze phases. The maximized dielectric constant of PSNN was 58 and the leakage current density was about 2.485×10-9 A·cm-2 by calculated at-1 V in 1 kHz. The breakdown field strength reached 220 kV/mm of the developed PSNN thin film system, which is promising in energy storage systems application.

Sign in / Sign up

Export Citation Format

Share Document