scholarly journals Transpyrenean Encounter on Advanced Materials

2017 ◽  
Vol 2 (2) ◽  
Author(s):  
Pierre Saint-Grégoire
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Carbon Nanotubes ◽  
Experimental Methods ◽  
Advanced Materials ◽  
Electron Holography ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Electron ◽  
Experimental Facilities

TEAM1 has taken place in Sete (France) on 4, 5, 6 july 2017. It has gathered a little less than 40 participants who presented communications on various fields of advanced materials, and on experimental facilities or experimental methods, that are briefly summarized in the present volume. Presented abstracts deal with fullerenes, graphene, thin films, oxides, ferroelectrics, pyroelectrics, piezoelectrics, superconductors, nanomaterials, photovoltaics, X-ray diffraction, electron diffraction, electron microscopy, electron holography, carbon nanotubes, nanorods, ZnO.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films

2021 ◽  
Vol 1039 ◽  
pp. 398-405
Author(s):  
Munira M.J. Al-Haji ◽  
Raad M.S. Al-Haddad
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Evaporation ◽  
Source Material ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Melt Quenching ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Scanning Electron

Bulk Germanium monosulphide (GeS) alloy was synthesized using the usual melt-quenching technique. Its grains were used as the source material to deposit thin films by vacuum thermal evaporation. Thin-films samples were doped with 1, 2, and 3 at.% indium by thermal co-evaporation and annealed in a vacuum at temperatures 373, 473 and 550 K for an hour. Compositional, structural, and morphological properties of the bulk GeS alloy and its thin films were investigated by Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) techniques. The analyses verified the stoichiometry (GeS) of the starting material in the prepared thin films. They also revealed that the thin films under study are amorphous, homogeneous, without any cracks deposited uniformly on the glass substrate with thickness 650 to 700 nm.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Formation and Characterization of the Quasicrystal Films

2007 ◽  
Vol 546-549 ◽  
pp. 1699-1702
Author(s):  
Xi Ying Zhou ◽  
Liang He ◽  
Yan Hui Liu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Electric Current ◽  
Wear Behavior ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

Al-Cu-Fe quasicrystals powder was used to prepare the thin films on the surface of the A3 steel by the means of DMD-450 vacuum evaporation equipment. The thin films with different characterization were obtained through different parameters. The microstructures of the thin films were analyzed by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Additionally, the nano-hardness and the modulus of the films are tested by MTS and Neophot micro-hardness meter. The results showed that the modulus of the films was about 160GPa. Nano hardness of the films was about 7.5 Gpa. The films consisted of CuAl2, AlCu3. The thickness and the micro-hardness of the films are improved. In same way, with the increase of the electric current, the thickness and the hardness of the films are also improved. Along with increase of the time and the electric current, the wear behavior of the films was improved. To some extent, the microstructure of films contained the quasicrystal phase of Al65Cu20Fe15.

TEM Study of FePt and FePt:C/FePt Composite Double-Layered Thin Films

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Magnetic Properties ◽  
Composite Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.

Microstructure Characterization of Si/C Multilayer Thin Films

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Twin Defects ◽  
Modulation Ratio

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

SnO2:F Thin Films with High Fluorine Contents Produced by Spray Pyrolysis at Constant Substrate Temperature

1996 ◽  
Vol 441 ◽  
Author(s):  
D. R. Acosta ◽  
E. Zironi ◽  
W. Estrada ◽  
E. Montoya
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Structural Parameters ◽  
Final Concentration ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray

AbstractFluorine doped tin oxide thin films were prepared from solutions with high fluorine contents using the spray pyrolysis technique; the resulting films were studied by electron and X-ray diffraction methods; the resonant nuclear reaction (RNR) method was used to determine the final concentration of fluorine atoms in our films for different doping levels. Also, electrical and optical properties of SnO2:F films were measured and correlated with deposition and structural parameters obtained from X-Ray diffraction and electron microscopy studies.

EPITAXIALLY GROWN YBCO THIN FILMS ON LOW LOSS LaAlO3 SUBSTRATE

1990 ◽  
Vol 04 (05) ◽  
pp. 369-373 ◽  
Author(s):  
Y. Z. ZHANG ◽  
L. LI ◽  
Y. Y. ZHAO ◽  
B. R. ZHAO ◽  
Y. G. WANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Low Loss ◽  
X Ray ◽  
Ybco Thin Films ◽  
Zero Resistance ◽  
Scanning Electron

A planar dc magnetron sputtering device was used to prepare high T c and high J c YBCO thin films. Both single crystal and polycrystal thin films were successfully grown on (100) oriented LaAlO 3 substrates. Zero resistance temperature T c0 = 92.3 K and critical current density J c (0) = 3.82 × 106 A/cm 2 at 77 K was obtained. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

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