scholarly journals LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD.

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
S. Abou Dargham ◽  
F. Ponchel ◽  
M. Soueidan ◽  
A. Khoury ◽  
J. Assaad ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Sodium Titanate ◽  
Lead Free ◽  
Piezoelectric Thin Films ◽  
First Results ◽  
Ferroelectric Hysteresis ◽  
Doppler Interferometer ◽  
Piezoelectric Performance

The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method:bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT).BNT films were annealed with the rapid thermal process (RTP).The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electricalcharacterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, thedielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated aremanent polarization of 10μC/cm2, associated with a coercive field of 70 kV/cm. The piezoelectric properties ofBNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was measured.

Recoverable Self-Polarization in Lead-Free Bismuth Sodium Titanate Piezoelectric Thin Films

2017 ◽  
Vol 9 (34) ◽  
pp. 28716-28725 ◽  
Author(s):  
Jinyan Zhao ◽  
Wei Ren ◽  
Gang Niu ◽  
Nan Zhang ◽  
Guohua Dong ◽  
...  
Keyword(s):  
Thin Films ◽  
Sodium Titanate ◽  
Lead Free ◽  
Bismuth Sodium Titanate ◽  
Piezoelectric Thin Films ◽  
Bismuth Sodium

Sol-gel processing and nanoscale characterization of (Bi0.5Na0.5)TiO3-SrTiO3 lead-free piezoelectric thin films

2018 ◽  
Vol 44 (4) ◽  
pp. 4114-4120 ◽  
Author(s):  
Hyun-Young Lee ◽  
Wei Sun ◽  
Jin Luo ◽  
Zhen Zhou ◽  
Jing-Feng Li
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Lead Free ◽  
Piezoelectric Thin Films ◽  
Nanoscale Characterization ◽  
Gel Processing

Macroscopic and local approaches of phase transition in sol–gel synthesized (Bi0.5Na0.5)TiO3–SrTiO3thin films

2018 ◽  
Vol 20 (22) ◽  
pp. 15236-15243 ◽  
Author(s):  
Hyun-Young Lee ◽  
Jin Luo ◽  
Zhen Zhou ◽  
Wei Sun ◽  
Jing-Feng Li
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Lead Free ◽  
High Quality ◽  
Gel Method ◽  
Sol Gel Method ◽  
Piezoelectric Thin Films

High-quality (1 −x)(Bi0.5Na0.5)TiO3–xSrTiO3lead-free piezoelectric thin films (x= 0, 0.1, and 0.25) on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a sol–gel method.

Effect of substrate on phase formation and surface morphology of sol-gel lead-free KNbO3, NaNbO3, and K0.5Na0.5NbO3 thin films

2012 ◽  
Vol 66 (8) ◽  
Author(s):  
Helena Bruncková ◽  
Ľubomír Medvecký ◽  
Pavol Hvizdoš
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Lead Free ◽  
Spherical Particles ◽  
Si Substrate ◽  
Electron Microscopic ◽  
Homogeneous Microstructure

AbstractEnvironmentally acceptable lead-free ferroelectric KNbO3 (KN) or NaNbO3 (NN) and K0.5Na0.5NbO3 (KNN) thin films were prepared using a modified sol-gel method by mixing potassium acetate or sodium acetate or both with the Nb-tartrate complex, deposited on the Pt/Al2O3 and Pt/SiO2/Si substrates by a spin-coating method and sintered at 650°C. X-ray diffraction (XRD) analysis indicated that the NN and KNN films on the Pt/SiO2/Si substrate possessed a single perovskite phase, while NN and KNN films on the Pt/Al2O3 substrate contained a small amount of secondary pyrochlore phase, as did KN films on both substrates. Scanning electron microscopic (SEM) and atomic force microscopic (AFM) analyses confirmed that roughness R q of the thin KNN/Pt/SiO2/Si film (≈ 7.4 nm) was significantly lower than that of the KNN/Pt/Al2O3 film (≈ 15 nm). The heterogeneous microstructure composed of small spherical and larger needle-like or cuboidal particles were observed in the KN and NN films on both substrates. The homogeneous microstructure of the KNN thin film on the Pt/SiO2/Si substrate was smoother and contained finer spherical particles (≈ 50 nm) than on Pt/Al2O3 substrates (≈ 100 nm). The effect of different substrates on the surface morphology of thin films was confirmed.

High piezoelectric performance of lead-free BiFeO3–BaTiO3 thin films grown by a pulsed laser deposition method

RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 106899-106903 ◽  
Author(s):  
Jinsu Park ◽  
Myang Hwan Lee ◽  
Da Jeong Kim ◽  
Myong-Ho Kim ◽  
Won-Jeong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lead Free ◽  
Silicon Substrates ◽  
Deposition Method ◽  
Piezoelectric Thin Films ◽  
Piezoelectric Performance

Lead-free (100 − x)BiFeO3–xBaTiO3 (BFBTx, x = 0, 30, 33, 40 and 50) piezoelectric thin films were deposited on platinized silicon substrates by using a pulsed laser deposition method.

Composition Dependence of Crystallinity for Lead-Free (Li, Na, K)NbO3Powder and Thin Films Fabricated by Sol-Gel Process

2007 ◽  
Vol 358 (1) ◽  
pp. 175-180 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Ken-Ichi Kakimoto ◽  
Hitoshi Ohsato ◽  
Takashi Iijima
Keyword(s):  
Thin Films ◽  
Composition Dependence ◽  
Sol Gel ◽  
Lead Free ◽  
Sol Gel Process

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

Optical properties of epitaxial Na0.5Bi0.5TiO3 lead-free piezoelectric thin films: Ellipsometric and theoretical studies

2017 ◽  
Vol 421 ◽  
pp. 367-372 ◽  
Author(s):  
Krzysztof Dorywalski ◽  
Nathalie Lemée ◽  
Bohdan Andriyevsky ◽  
Rüdiger Schmidt-Grund ◽  
Marius Grundmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Lead Free ◽  
Theoretical Studies ◽  
Piezoelectric Thin Films

Structural, Ferroelectric, Pyroelectric, and Dielectric Study of Bi0.5Na0.5TiO3 Ceramics synthesized with Precursors Obtained by Sol-Gel Method doped with Lanthanum

2021 ◽  
Author(s):  
José de Jesus Serralta-Macías1 ◽  
Francisco de Paula Calderón-Piñar ◽  
Osmany García Zaldivar ◽  
Daniel Olguin ◽  
jose martin yañez limon
Keyword(s):  
Ferroelectric Properties ◽  
Sol Gel ◽  
Rhombohedral Phase ◽  
Sodium Titanate ◽  
Dielectric Study ◽  
Scanning Calorimetry ◽  
Gel Method ◽  
Sol Gel Method ◽  
Diffraction Patterns ◽  
Ferroelectric Hysteresis

Abstract In this work, the ferroelectric, pyroelectric and dielectric properties of La-doped bismuth sodium titanate ceramics (BNLT) using amounts from 0 to 6.7 at.% La were studied. The precursor powders used to make dense BNLT ceramics were obtained by the sol-gel method using the acetic acid route. All samples were calcined at 700°C for 1hr and sintered at 1150°C for 30 min in an encapsulated crucible to avoid Na and Bi volatilization, obtaining relative densities equal or higher than 94%. The obtained X-ray diffraction patterns typical of the perovskite structure, confirm the incorporation of lanthanum into the lattice, evolving from rhombohedral phase to a mixture of rhombohedral and cubic structure for higher concentrations. Thermogravimetry (TG) and Differential Scanning Calorimetry (DSC) results indicate that the crystallization of precursors powders of BNT takes place between 500 and 700°C. Additionally, the Scanning Electron Microscopy (SEM) micrographs reveal a decrement of grain size from 4.5 to 0.5 μm with increasing La content. The ferroelectric hysteresis curves show that the best ferroelectric properties were obtained for BNT 1.3% La, where the obtained values of remnant polarization and coercive field were Pr=29 μC/cm2 and Ec=39 kV/cm respectively. Also, at this concentration, the pyroelectric response shows the higher value, 4 times the pyroelectric signal of the pure BNT.

Atomic structures of planar defects in 0.95(Na0.5Bi0.5)TiO3–0.05BaTiO3 lead-free piezoelectric thin films

2015 ◽  
Vol 636 ◽  
pp. 183-186 ◽  
Author(s):  
Shao-Bo Mi ◽  
Xiao-Wei Jin ◽  
Sheng Cheng ◽  
Ming Liu ◽  
Lu Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Free ◽  
Planar Defects ◽  
Atomic Structures ◽  
Piezoelectric Thin Films
Sign in / Sign up

Export Citation Format

Share Document