Application of induced laser ablation with ultra short pulse lasers for high speed thin film solar cell processing

2010 ◽  
Author(s):  
Gerhard Heise ◽  
Marcel Dickmann ◽  
Jan Konrad ◽  
Isabell Richter ◽  
Sebastian Sarrach ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Laser Ablation ◽  
Thin Film Solar Cell ◽  
High Speed ◽  
Short Pulse ◽  
Cell Processing ◽  
Short Pulse Lasers ◽  
Ultra Short Pulse

Influence of Laser Scribing System in the Electrical Properties for a-Si Thin Film Solar Cell Preparation

2013 ◽  
Vol 552 ◽  
pp. 356-360
Author(s):  
Xue Song Chen ◽  
Xin Chen ◽  
Xin Du Chen ◽  
Ming Sheng Yang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Thin Film Solar Cell ◽  
High Speed ◽  
Focal Depth ◽  
Cell Preparation ◽  
Laser Scribing ◽  
Si Thin Film

Laser scribing of hydrogenated amorphous silicon (a-Si) is a crucial step in the fabrication of thin film photovoltaic modules. The required line width of the laser scribing process for a-Si thin film solar cell preparation is 30 m~50 m, the dead zone is less than 300 m in size, and the line depth should be compliant with the process requirements. Thus, the high imaging quality and focal depth of the optical system is required in the laser scribing system. Three crucial laser patterning steps (known as P1, P2 and P3 in the photovoltaic literature) are integrated in the thin film silicon module manufacturing sequence. Therefore, efforts to optimize these laser processes are demanded by the photovoltaic industry. In particular, the state of the remaining material after laser treatment is known to have a critical influence on the electrical properties of the final devices. This paper focuses on the P3 laser scribing process with the peculiarity that it has been done in single solar cells. By evaluating it in single solar cells rather than in finished module, it is possible to isolate its effect on the device characteristics since the P1 and P2 scribings are omitted. To study the effect of the P3 scribing length, several scribings can be done in the same cell. As it will be shown, the high speed motion systems needed for precision laser scribing plays an important role in this experiment. They can be responsible for the electrical losses after the scribing of the solar cells. If this is dealt with properly, it can be seen that the P3 scribings have very little effect on the electrical characteristics of the processed solar cells.

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

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