Laser hot-wire welding for minimizing defects

Author(s):  
Marshall Jones ◽  
Carl Erikson ◽  
Daniel Nowak ◽  
Ganjiang Feng
Keyword(s):  
Hot Wire ◽  
2015 ◽  
Vol 78 (9-12) ◽  
pp. 1485-1499 ◽  
Author(s):  
Wei Liu ◽  
Junjie Ma ◽  
Shuang Liu ◽  
Radovan Kovacevic

2017 ◽  
Vol 29 (2) ◽  
pp. 022014 ◽  
Author(s):  
Jonas Näsström ◽  
Jan Frostevarg ◽  
Alexander F. H. Kaplan

Metals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 909 ◽  
Author(s):  
Shichun Li ◽  
Wei Xu ◽  
Gang Xiao ◽  
Bing Chen

The laser hot-wire welding process was adopted to weld 7075 high-strength aluminum alloy. The influence laws of parameters on the weld formation were analyzed during laser hot-wire welding, and the microstructure characteristics and mechanical properties of welds were analyzed. The results showed that the parameters whose significance of influence on weld formation as ranked from high to low were laser power, current, gap width, welding speed and wire feeding rate. With the increase of wire temperature, the weld formation quality became better initially and then worse. Under the condition of optimized parameters, good weld formation could be obtained. The weld zone had a fine grain microstructure, and was in casting state consisted of dendritic crystal and equiaxed crystal. The heat affected zone mainly consisted of columnar crystal. The microhardness decreased gradually from base metal to heat affected zone then to weld zone. The tensile fracture of weld specimen occurred at the weld zone, and was in the ductile fracture state. The tensile strength of weld joint was 206 MPa and was 64.2% of base metal strength.


2014 ◽  
Vol 41 (4) ◽  
pp. 0403008 ◽  
Author(s):  
郑世卿 Zheng Shiqing ◽  
温鹏 Wen Peng ◽  
单际国 Shan Jiguo

2020 ◽  
Vol 7 (10) ◽  
pp. 106506
Author(s):  
Shichun Li ◽  
Wei Xu ◽  
Gang Xiao ◽  
Zhenhong Zhou ◽  
Fei Su ◽  
...  

2014 ◽  
Vol 57 ◽  
pp. 66-76 ◽  
Author(s):  
Wei Liu ◽  
Shuang Liu ◽  
Junjie Ma ◽  
Radovan Kovacevic

Applied laser ◽  
2013 ◽  
Vol 33 (6) ◽  
pp. 606-611
Author(s):  
刘雅静 Liu Yajing ◽  
宋丙新 Song Bingxin ◽  
范光辉 Fan Guanghui

Applied laser ◽  
2013 ◽  
Vol 33 (6) ◽  
pp. 606-611 ◽  
Author(s):  
刘雅静 Liu Yajing ◽  
宋丙新 Song Bingxin ◽  
范光辉 Fan Guanghui

2002 ◽  
Vol 715 ◽  
Author(s):  
Keda Wang ◽  
Haoyue Zhang ◽  
Jian Zhang ◽  
Jessica M. Owens ◽  
Jennifer Weinberg-Wolf ◽  
...  

Abstracta-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of Ts=250°C with varied hydrogen-dilution ratio, 0<R<10; the other group was deposited with fixed R=3 but a varied Ts from 150 to 550°C. IR, Raman and PL spectra were studied. The Raman results indicate that there is a threshold value for the microstructure transition from a- to μc-Si. The threshold is found to be R ≈ 2 at Ts = 250°C and Ts ≈ 200°C at R=3. The IR absorption of Si-H at 640 cm-1 was used to calculate the hydrogen content, CH. CH decreased monotonically when either R or Ts increased. The Si-H stretching mode contains two peaks at 2000 and 2090 cm-1. The ratio of the integral absorption peaks I2090/(I2090+I2090) showed a sudden increase at the threshold of microcrystallinity. At the same threshold, the PL features also indicate a sudden change from a- to μc-Si., i.e. the low energy PL band becomes dominant and the PL total intensity decreases. We attribute the above IR and PL changes to the contribution of microcrystallinity, especially the c-Si gain-boundaries.


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