Excimer laser-assisted cleaning of single-crystal silicon wafers contaminated with metallic particles

2001 ◽  
Author(s):  
P. Neves ◽  
M. Arronte ◽  
A. Almeida ◽  
R. Vilar ◽  
A. M. Botelho do Rego
Keyword(s):  
Single Crystal ◽  
Excimer Laser ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Metallic Particles

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Electrodeposition of nanometer-thick epitaxial films of silver onto single-crystal silicon wafers

2019 ◽  
Vol 7 (6) ◽  
pp. 1720-1725 ◽  
Author(s):  
Qingzhi Chen ◽  
Jay A. Switzer
Keyword(s):  
Single Crystal ◽  
Electrochemical Method ◽  
Single Crystal Silicon ◽  
Epitaxial Films ◽  
Silicon Wafers ◽  
Silver Acetate ◽  
Crystal Silicon ◽  
Silver Films ◽  
First Time

Silver films were deposited epitaxially for the first time onto low-index, single-crystal silicon wafers through an electrochemical method in an aqueous silver acetate bath.

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