Progress in laser-induced backside wet etching

2010 ◽  
Author(s):  
Hiroyuki Niino ◽  
Tadatake Sato ◽  
Yoshizo Kawaguchi ◽  
Aiko Narazaki ◽  
Ryozo Kurosaki
Keyword(s):  
Wet Etching

A Review of Wet Etch Formulas for Silicon Semiconductor Failure Analysis

1996 ◽  
Author(s):  
T.W. Lee
Keyword(s):  
Failure Analysis ◽  
Literature Search ◽  
Wet Etching ◽  
Second Step ◽  
Environmental Concerns ◽  
Acid System ◽  
Graphical Data ◽  
Selective Etch ◽  
Chromium Compounds ◽  
Wet Etch

Abstract WET ETCHING is an important part of the failure analysis of semiconductor devices. Analysis requires etches for the removal, delineation by decoration or differential etching, and study of defects in layers of various materials. Each lab usually has a collection of favored etch recipes. Some of these etches are available premixed from the fab chemical supply. Some of these etches may be unique, or even proprietary, to your company. Additionally, the lab etch recipe list will usually contain a variety of classical "named etches". These recipes, such as Dash Etch, have persisted over time. Although well-reported in the literature, lab lists may not accurately represent these recipes, or contain complete and accurate instructions for their use. Time seems to have erased the understanding of the purpose of additives such as iodine, in some of these formulas. To identify the best etches and techniques for a failure analysis operations, a targeted literature review of articles and patents was undertaken. It was a surprise to find that much of the work was quite old, and originally done with germanium. Later some of these etches were modified for silicon. Much of this work is still applicable today. Two main etch types were found. One is concerned with the thinning and chemical polishing of silicon. The other type is concerned with identifying defects in silicon. Many of the named etches were found to consist of variations in a specific acid system. The acid system has been well characterized with ternary diagrams and 3-D surfaces. The named etches were plotted on this diagram. The original formulas and applications of the named etches were traced to assure accuracy, so that the results claimed by the original authors, may be reproduced in today's lab. The purpose of this paper is to share the condensed information obtained during this literature search. Graphical data has been corrected for modem dimensions. Selectivities have been located and discussed. The contents of more than 25 named etches were spreadsheeted. It was concluded that the best approach to delineation is a two-step etch, using uncomplicated and well-characterized standard formulas. The first step uses a decoration or differential etch technique to define the junctions. Formulations for effective decoration etches were found to be surprisingly simple. The second step uses a selective etch to define the various interconnections and dielectric layers. Chromium compounds can be completely eliminated from these formulas, to meet environmental concerns. This work, originally consisting of 30 pages with 106 references, has been condensed to conform with the formatting requirements of this publication.

A Novel Junction Profiling Methodology

2010 ◽  
Author(s):  
Tomokazu Nakai
Keyword(s):  
Failure Analysis ◽  
Profile Analysis ◽  
Semiconductor Devices ◽  
Wet Etching ◽  
Two Dimensional ◽  
Electrical Characteristics ◽  
Conventional Methods

Abstract Currently many methods are available to obtain a junction profile of semiconductor devices, but the conventional methods have drawbacks, and they could be obstacles for junction profile analysis. This paper introduces an anodic wet etching-based two-dimensional junction profiling method, which is practical, efficient, and reliable for failure analysis and electrical characteristics evaluation.

scholarly journals Ultra-Narrow Metallic Nano-Trenches Realized by Wet Etching and Critical Point Drying

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 783
Author(s):  
Jeeyoon Jeong ◽  
Hyosim Yang ◽  
Seondo Park ◽  
Yun Daniel Park ◽  
Dai-Sik Kim
Keyword(s):  
Critical Point ◽  
Terahertz Spectroscopy ◽  
High Surface ◽  
Wet Etching ◽  
Drying Process ◽  
Metal Structures ◽  
Critical Point Drying ◽  
Metal Insulator Metal ◽  
Gap Width ◽  
Optical Structure

A metallic nano-trench is a unique optical structure capable of ultrasensitive detection of molecules, active modulation as well as potential electrochemical applications. Recently, wet-etching the dielectrics of metal–insulator–metal structures has emerged as a reliable method of creating optically active metallic nano-trenches with a gap width of 10 nm or less, opening a new venue for studying the dynamics of nanoconfined molecules. Yet, the high surface tension of water in the process of drying leaves the nano-trenches vulnerable to collapsing, limiting the achievable width to no less than 5 nm. In this work, we overcome the technical limit and realize metallic nano-trenches with widths as small as 1.5 nm. The critical point drying technique significantly alleviates the stress applied to the gap in the drying process, keeping the ultra-narrow gap from collapsing. Terahertz spectroscopy of the trenches clearly reveals the signature of successful wet etching of the dielectrics without apparent damage to the gap. We expect that our work will enable various optical and electrochemical studies at a few-molecules-thick level.

Fabrication on n-Ga2O3/p-GaN diode by wet-etching lift-off and transfer-print

2021 ◽  
Author(s):  
Yang Liu ◽  
Lai Wang ◽  
Yuantao Zhang ◽  
Xin Dong ◽  
Zhibiao Hao ◽  
...  
Keyword(s):  
Wet Etching ◽  
Lift Off

scholarly journals Fabrication of elastic, conductive, wear-resistant superhydrophobic composite material

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Seyed Mehran Mirmohammadi ◽  
Sasha Hoshian ◽  
Ville P. Jokinen ◽  
Sami Franssila
Keyword(s):  
Contact Angle ◽  
Composite Material ◽  
Contact Angles ◽  
Wet Etching ◽  
Sliding Angle ◽  
Electrically Conductive ◽  
Wear Resistant ◽  
Nanoscale Structures ◽  
Mechanical Abrasion ◽  
Mechanical Durability

AbstractA polydimethylsiloxane (PDMS)/Cu superhydrophobic composite material is fabricated by wet etching, electroless plating, and polymer casting. The surface topography of the material emerges from hierarchical micro/nanoscale structures of etched aluminum, which are rigorously copied by plated copper. The resulting material is superhydrophobic (contact angle > 170°, sliding angle < 7° with 7 µL droplets), electrically conductive, elastic and wear resistant. The mechanical durability of both the superhydrophobicity and the metallic conductivity are the key advantages of this material. The material is robust against mechanical abrasion (1000 cycles): the contact angles were only marginally lowered, the sliding angles remained below 10°, and the material retained its superhydrophobicity. The resistivity varied from 0.7 × 10–5 Ωm (virgin) to 5 × 10–5 Ωm (1000 abrasion cycles) and 30 × 10–5 Ωm (3000 abrasion cycles). The material also underwent 10,000 cycles of stretching and bending, which led to only minor changes in superhydrophobicity and the resistivity remained below 90 × 10–5 Ωm.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

A Study on the Removal Method of Si Residue during Si Wet Etching

2013 ◽  
Vol 58 (6) ◽  
pp. 57-61
Author(s):  
K. Ko ◽  
H. Jeon ◽  
M. Song ◽  
J. Han ◽  
B. Yoon ◽  
...  
Keyword(s):  
Wet Etching ◽  
Removal Method
Sign in / Sign up

Export Citation Format

Share Document