Aligned growth of ZnO nanowires by laser ablation and their applications

2008 ◽  
Author(s):  
Tatsuo Okada ◽  
Ruiqian Guo ◽  
Jun Nishimura ◽  
Masato Matsumoto ◽  
M. Higashihata ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Zno Nanowires ◽  
Aligned Growth

A low-temperature limit for growth of ZnO nanowires by using of laser ablation processes

2020 ◽  
Vol 126 (4) ◽  
Author(s):  
Jaroslav Bruncko ◽  
Miroslav Michalka ◽  
Jaroslav Kovac ◽  
Andrej Vincze
Keyword(s):  
Laser Ablation ◽  
Low Temperature ◽  
Temperature Limit ◽  
Zno Nanowires

Aligned growth of ZnO nanowires by NAPLD and their optical characterizations

2009 ◽  
Vol 255 (24) ◽  
pp. 9671-9675 ◽  
Author(s):  
Ruiqian Guo ◽  
Masato Matsumoto ◽  
Takafumi Matsumoto ◽  
Mitsuhiro Higashihata ◽  
Daisuke Nakamura ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Aligned Growth

Pb nanoparticle tipped ZnO nanowires heterostructures by long-pulse-width laser ablation of binary metal target in diluted gas

2014 ◽  
Vol 119 ◽  
pp. 8-11 ◽  
Author(s):  
Fei Tian ◽  
Yongguang Zhao ◽  
Yinan Liu ◽  
Hongmei Cao ◽  
Jing Zhao ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulse Width ◽  
Zno Nanowires ◽  
Metal Target ◽  
Binary Metal ◽  
Long Pulse

Controlled growth of ZnO nanowires by nanoparticle-assisted laser ablation deposition

2008 ◽  
Author(s):  
T. Okada ◽  
R. Guo ◽  
J. Nishimura ◽  
M. Matsumoto ◽  
M. Higashihata ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Zno Nanowires ◽  
Controlled Growth

Vertically aligned growth of ZnO nanonails by nanoparticle-assisted pulsed-laser ablation deposition

2007 ◽  
Vol 89 (1) ◽  
pp. 141-144 ◽  
Author(s):  
R.Q. Guo ◽  
J. Nishimura ◽  
M. Ueda ◽  
M. Higashihata ◽  
D. Nakamura ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Aligned Growth ◽  
Vertically Aligned

Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities

2008 ◽  
Vol 90 (3-4) ◽  
pp. 539-542 ◽  
Author(s):  
R.Q. Guo ◽  
J. Nishimura ◽  
M. Matsumoto ◽  
M. Higashihata ◽  
D. Nakamura ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Zno Nanowire ◽  
Optical Cavities ◽  
Aligned Growth

Ultrafast Laser Deposition of Semiconductor Nanowires

2004 ◽  
Vol 850 ◽  
Author(s):  
Samuel S. Mao
Keyword(s):  
Laser Ablation ◽  
Short Pulse ◽  
Strong Electric Field ◽  
Internal Quantum Efficiency ◽  
Zno Nanowires ◽  
Ultrafast Laser ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
High Quality ◽  
Ultrafast Laser Ablation

ABSTRACTPulsed laser deposition (PLD) has been applied to fabricate thin films of a variety of materials. However, formation of micron-sized particulates during conventional nanosecond laser-based deposition process makes it unsuitable for growing high quality nanoscale materials. Owing to a nonequilibrium non-thermal ablation mechanism and characterized by their short pulse duration compared to thermal diffusion time (tens of picoseconds), ultrafast laser pulses are able to produce particulate-free precursor vapor for nanoscale material deposition. In this article, the foundation of non-thermal ultrafast laser ablation will be examined by both experimental and theoretical investigations. Ultrafast laser-induced high-density electron ejection and subsequent build -up of a strong electric field above the target material were observed. Mass spectrometry and electron microscopy measurements confirmed the particulate-free nature of ultrafast laser ablation. Using ultrafast laser-based particulate-free PLD approach, high quality ZnO nanowires were grown on sapphire and silicon substrates. The optical properties of ZnO nanowires, including the external and internal quantum efficiency of nanowire nanolasers, were experimentally determined. In addition, a nanowire UV photodiode based on p−Si/n−ZnO nanowires was successfully fabricated. This first nanowire photodiode device shows good photocurrent characteristics when operated under reverse bias.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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