scholarly journals Materials Synthesis Using Ion Beams-Modification of Polymer Surfaces.

1997 ◽  
Vol 70 (6) ◽  
pp. 302-309
Author(s):  
MASAYA IWAKI
Keyword(s):  
Ion Beams ◽  
Polymer Surfaces ◽  
Materials Synthesis

Miniconference on use of ion beams for surface modification, new materials synthesis, and materials response

2005 ◽  
Vol 12 (5) ◽  
pp. 058302 ◽  
Author(s):  
Timothy J. Renk ◽  
Anatoli Shlapakovski ◽  
Robert R. Peterson ◽  
James P. Blanchard ◽  
Carl Martin
Keyword(s):  
Surface Modification ◽  
Ion Beams ◽  
New Materials ◽  
Materials Synthesis

scholarly journals Negative Ion Beams and Plasmas. A New Machine for Materials Synthesis Using Positive and Negative Ion Deposition.

Shinku ◽  
1995 ◽  
Vol 38 (11) ◽  
pp. 929-934
Author(s):  
Kanenaga FUJII ◽  
Yuji HORINO ◽  
Nobuteru TSUBOUCHI ◽  
Akiyoshi CHAYAHARA ◽  
Atsushi KINOMURA
Keyword(s):  
Ion Beams ◽  
Negative Ion ◽  
Materials Synthesis ◽  
New Machine ◽  
Ion Deposition

Analysis of Polymer Surfaces Using Electron and Ion Beams

1990 ◽  
Vol 62 (11) ◽  
pp. 645A-661A ◽  
Author(s):  
Joseph A. Gardella ◽  
Jean-Jacques Pireaux
Keyword(s):  
Ion Beams ◽  
Polymer Surfaces

Cell adhesion and spreading on polymer surfaces micropatterned by ion beams

2003 ◽  
Vol 21 (4) ◽  
pp. 1145-1151 ◽  
Author(s):  
C. Satriano ◽  
S. Carnazza ◽  
A. Licciardello ◽  
S. Guglielmino ◽  
G. Marletta
Keyword(s):  
Cell Adhesion ◽  
Ion Beams ◽  
Polymer Surfaces

Interaction of Ion Beams with Polymer Surfaces Leading to Etching and Sputtering Processes

1974 ◽  
Vol 13 (S1) ◽  
pp. 439 ◽  
Author(s):  
Ch. Weissmantel ◽  
M. Rost ◽  
O. Fiedler ◽  
H. -J. Erler ◽  
H. Giegengack ◽  
...  
Keyword(s):  
Ion Beams ◽  
Polymer Surfaces

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Effects of Electrical Discharges in Low Pressure Gases on the Morphology of Polyethylene Crystals

1974 ◽  
Vol 32 ◽  
pp. 544-545
Author(s):  
L.H. Bolz ◽  
D.H. Reneker
Keyword(s):  
Power Distribution ◽  
Electrical Discharge ◽  
Dielectric Breakdown ◽  
Ionic Species ◽  
Low Pressure ◽  
Polymer Surfaces ◽  
Electrical Discharges ◽  
Adhesive Bonds ◽  
Power Distribution Lines ◽  
Modification Of The Surface

The attack, on the surface of a polymer, by the atomic, molecular and ionic species that are created in a low pressure electrical discharge in a gas is interesting because: 1) significant interior morphological features may be revealed, 2) dielectric breakdown of polymeric insulation on high voltage power distribution lines involves the attack on the polymer of such species created in a corona discharge, 3) adhesive bonds formed between polymer surfaces subjected to such SDecies are much stronger than bonds between untreated surfaces, 4) the chemical modification of the surface creates a reactive surface to which a thin layer of another polymer may be bonded by glow discharge polymerization.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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