scholarly journals Influences of Electron Beam Irradiation on Mass of Water Absorption for Acryl Resin

2008 ◽  
Vol 72 (5) ◽  
pp. 366-370 ◽  
Author(s):  
Hironori Sato ◽  
Keisuke Iwata ◽  
Masae Kanda ◽  
Akira Tonegawa ◽  
Yoshitake Nishi
2008 ◽  
Vol 72 (1) ◽  
pp. 35-38 ◽  
Author(s):  
Ryuichi Suenaga ◽  
Masae Kanda ◽  
Naoto Hironaka ◽  
Keisuke Iwata ◽  
Akira Tonegawa ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4659
Author(s):  
Elena Manaila ◽  
Gabriela Craciun ◽  
Daniel Ighigeanu ◽  
Maria Daniela Stelescu

Rubber-based wastes represent challenges facing the global community. Human health protection and preservation of environmental quality are strong reasons to find more efficient methods to induce degradation of latex/rubber products in order to replace devulcanization, incineration, or simply storage, and electron beam irradiation is a promising method that can be can be taken into account. Polymeric composites based on natural rubber and plasticized starch in amounts of 10 to 50 phr, obtained by benzoyl peroxide cross-linking, were subjected to 5.5 MeV electron beam irradiation in order to induce degradation, in the dose range of 150 to 450 kGy. A qualitative study was conducted on the kinetics of water absorption in these composites in order to appreciate their degradation degree. The percentages of equilibrium sorption and mass loss after equilibrium sorption were found to be dependent on irradiation dose and amount of plasticized starch. The mechanism of water transport in composites was studied not only through the specific absorption and diffusion parameters but also by the evaluation of the diffusion, intrinsic diffusion, permeation, and absorption coefficients.


RSC Advances ◽  
2020 ◽  
Vol 10 (36) ◽  
pp. 21481-21486
Author(s):  
Juan Wang ◽  
Jianping Qiu ◽  
Siyi Xu ◽  
Jianxi Li ◽  
Liguo Shen

It is known that polycaprolactam (PA6) and polyhexamethylene adipamide (PA66) are widely used industrial materials including in the irradiation industry.


Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.


Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.


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