Spore Surface Morphology of Hawaiian Acacia Rust Fungi

Mycologia ◽  
1985 ◽  
Vol 77 (4) ◽  
pp. 575 ◽  
Author(s):  
Donald E. Gardner ◽  
Charles S. Hodges
Keyword(s):  
Surface Morphology ◽  
Rust Fungi ◽  
Spore Surface

Spore surface morphology of pine stem rusts of Canada as observed under a scanning electron microscope

1971 ◽  
Vol 49 (3) ◽  
pp. 371-372 ◽  
Author(s):  
Y. Hiratsuka
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Morphology ◽  
Spore Surface ◽  
Endocronartium Harknessii ◽  
Scanning Electron ◽  
Shape And Size

Two types of surface markings on the aeciospores of five pine stem rusts occurring in Canada were observed under a scanning electron microscope. Spores of four species, Endocronartium harknessii (J. P. Moore) Y. Hiratsuka (= Peridermium harknessii J. P. Moore), Cronartium coleosporioides Arth. (= P. stalactiforme Arth. & Kern), C. comptoniae Arth., and C. ribicola J. C. Fisch., had annulated processes with five to seven layers and each spore had a smooth area. The smooth area was at the same level as the top layer of the processes. Each species could be distinguished by the shape and size of its processes. Spores of Cronartium comandrae Pk. had no smooth areas and had obtuse or cuspidate processes with no annulations. Different ontogenies were apparent for the two types of spore surface markings.

scholarly journals Atomic force microscopy of Bacillus spore surface morphology

Micron ◽  
2006 ◽  
Vol 37 (4) ◽  
pp. 363-369 ◽  
Author(s):  
Ruth A. Zolock ◽  
Guangming Li ◽  
Charles Bleckmann ◽  
Larry Burggraf ◽  
Douglas C. Fuller
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Spore Surface ◽  
Force Microscopy ◽  
Bacillus Spore ◽  
Atomic Force

Spore Surface Morphology of HawaiianAcaciaRust Fungi

Mycologia ◽  
1985 ◽  
Vol 77 (4) ◽  
pp. 575-586 ◽  
Author(s):  
Donald E. Gardner ◽  
Charles S. Hodges
Keyword(s):  
Surface Morphology ◽  
Spore Surface

Surface Structure of the Spores of Glugea Weissenbergi

1969 ◽  
Vol 27 ◽  
pp. 238-239
Author(s):  
Sanford H. Vernick ◽  
Anastasios Tousimis ◽  
Victor Sprague
Keyword(s):  
Electron Microscope ◽  
Surface Structure ◽  
Transmission Electron Microscope ◽  
Mature Spore ◽  
Spore Surface ◽  
Sectioned Material ◽  
Transmission Electron ◽  
Surface Detail

Recent electron microscope studies have greatly expanded our knowledge of the structure of the Microsporida, particularly of the developing and mature spore. Since these studies involved mainly sectioned material, they have revealed much internal detail of the spores but relatively little surface detail. This report concerns observations on the spore surface by means of the transmission electron microscope.

An Established Epithelial Cell Line (NPC/HK1) from a Nasopharyngeal Carcinoma - II. A Sem Study

1982 ◽  
Vol 40 ◽  
pp. 224-225
Author(s):  
Li C.L. ◽  
Chew E.C. ◽  
Huang D.P. ◽  
Ho H.C. ◽  
Mak L.S. ◽  
...  
Keyword(s):  
Nasopharyngeal Carcinoma ◽  
Epithelial Cell ◽  
Surface Morphology ◽  
Cell Line ◽  
Epithelial Cell Line ◽  
Present Communication ◽  
Cells In Culture ◽  
Sem Study ◽  
Well Differentiated

An epithelial cell line, NPC/HK1, has recently been successfully established from a nasopharyngeal carcinoma of the moderately to well differentiated squamous type. The present communication reports on the surface morphology of the NPC/HK1 cells in culture.

Specimen Collection Effect in Scanning Electron Microscopy Images

1972 ◽  
Vol 30 ◽  
pp. 448-449
Author(s):  
J. Temple Black ◽  
Jose Guerrero
Keyword(s):  
Surface Morphology ◽  
Secondary Electron Emission ◽  
Secondary Electrons ◽  
Charge Effects ◽  
Material Density ◽  
Specimen Collection ◽  
The Subject ◽  
Curved Paths ◽  
Subject Material ◽  
Microscopy Images

In the SEM, contrast in the image is the result of variations in the volume secondary electron emission and backscatter emission which reaches the detector and serves to intensity modulate the signal for the CRT's. This emission is a function of the accelerating potential, material density, chemistry, crystallography, local charge effects, surface morphology and especially the angle of the incident electron beam with the particular surface site. Aside from the influence of object inclination, the surface morphology is the most important feature In producing contrast. “Specimen collection“ is the name given the shielding of the collector by adjacent parts of the specimen, producing much image contrast. This type of contrast can occur for both secondary and backscatter electrons even though the secondary electrons take curved paths to the detector-collector.Figure 1 demonstrates, in a unique and striking fashion, the specimen collection effect. The subject material here is Armco Iron, 99.85% purity, which was spark machined.

The Effect of Benzene on Bluegill Olfactory Lamellae

1985 ◽  
Vol 43 ◽  
pp. 574-575
Author(s):  
D.R. Mattie ◽  
J.W. Fisher
Keyword(s):  
Surface Morphology ◽  
Soluble Fraction ◽  
Lepomis Macrochirus ◽  
Sublethal Concentration ◽  
Water Soluble ◽  
Major Constituent ◽  
Jet Fuels ◽  
Aquatic Biota ◽  
Normal Surface ◽  
Cacodylate Buffer

Jet fuels such as JP-4 can be introduced into the environment and come in contact with aquatic biota in several ways. Studies in this laboratory have demonstrated JP-4 toxicity to fish. Benzene is the major constituent of the water soluble fraction of JP-4. The normal surface morphology of bluegill olfactory lamellae was examined in conjunction with electrophysiology experiments. There was no information regarding the ultrastructural and physiological responses of the olfactory epithelium of bluegills to acute benzene exposure.The purpose of this investigation was to determine the effects of benzene on the surface morphology of the nasal rosettes of the bluegill sunfish (Lepomis macrochirus). Bluegills were exposed to a sublethal concentration of 7.7±0.2ppm (+S.E.M.) benzene for five, ten or fourteen days. Nasal rosettes were fixed in 2.5% glutaraldehyde and 2.0% paraformaldehyde in 0.1M cacodylate buffer (pH 7.4) containing 1.25mM calcium chloride. Specimens were processed for scanning electron microscopy.

Observation of surface morphology by reflection electron holography

1989 ◽  
Vol 47 ◽  
pp. 536-537
Author(s):  
N. Osakabe ◽  
J. Endo ◽  
T. Matsuda ◽  
A. Tonomura
Keyword(s):  
Phase Shift ◽  
Surface Morphology ◽  
High Sensitivity ◽  
High Energy ◽  
Path Difference ◽  
Transmission Mode ◽  
Electron Holography ◽  
Dynamical Process ◽  
High Vertical Resolution ◽  
Amplification Technique

Progress in microscopy such as STM and TEM-TED has revealed surface structures in atomic dimension. REM has been used for the observation of surface dynamical process and surface morphology. Recently developed reflection electron holography, which employes REM optics to measure the phase shift of reflected electron, has been proved to be effective for the observation of surface morphology in high vertical resolution ≃ 0.01 Å.The key to the high sensitivity of the method is best shown by comparing the phase shift generation by surface topography with that in transmission mode. Difference in refractive index between vacuum and material Vo/2E≃10-4 owes the phase shift in transmission mode as shownn Fig. 1( a). While geometrical path difference is created in reflection mode( Fig. 1(b) ), which is measured interferometrically using high energy electron beam of wavelength ≃0.01 Å. Together with the phase amplification technique , the vertivcal resolution is expected to be ≤0.01 Å in an ideal case.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

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