Near-Ultraviolet Light in Incubation of Marine Leaf-Litter Samples

Mycologia ◽  
1982 ◽  
Vol 74 (3) ◽  
pp. 508 ◽  
Author(s):  
Steven Y. Newell ◽  
Jack W. Fell
Keyword(s):  
Leaf Litter ◽  
Ultraviolet Light ◽  
Near Ultraviolet

Near-Ultraviolet Light in Incubation of Marine Leaf-Litter Samples

Mycologia ◽  
1982 ◽  
Vol 74 (3) ◽  
pp. 508-510
Author(s):  
Steven Y. Newell ◽  
Jack W. Fell
Keyword(s):  
Leaf Litter ◽  
Ultraviolet Light ◽  
Near Ultraviolet

A novel near-ultraviolet-light excitable Eu3+-doped Sr2LaTaO6 red phosphor for white-light-emitting diodes

Optik ◽  
2021 ◽  
Vol 240 ◽  
pp. 166908
Author(s):  
Qifeng Tang ◽  
Tao Yang ◽  
Haifeng Huang ◽  
Jinqing Ao ◽  
Biyou Peng ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
White Light ◽  
Light Emitting Diodes ◽  
Red Phosphor ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
White Light Emitting Diodes

Nerve autofluorescence in near-ultraviolet light markedly enhances nerve visualization in vivo

2021 ◽  
Author(s):  
Fernando Dip ◽  
Pedro Bregoli ◽  
Jorge Falco ◽  
Kevin P. White ◽  
Raúl J. Rosenthal
Keyword(s):  
Ultraviolet Light ◽  
Near Ultraviolet

scholarly journals Generation of 280 THz-spanning near-ultraviolet light in lithium niobate-on-insulator waveguides with sub-100 pJ pulses

APL Photonics ◽  
2020 ◽  
Vol 5 (12) ◽  
pp. 121301
Author(s):  
Marc Reig Escalé ◽  
Fabian Kaufmann ◽  
Hehai Jiang ◽  
David Pohl ◽  
Rachel Grange
Keyword(s):  
Lithium Niobate ◽  
Ultraviolet Light ◽  
Near Ultraviolet

Mutation induction and killing of V79 Chinese hamster cells by 8-methoxypsoralen plus near-ultraviolet light: Relative effects of monoadducts and crosslinks

1981 ◽  
Vol 91 (4-5) ◽  
pp. 391-394 ◽  
Author(s):  
Nora Babudri ◽  
Bianca Pani ◽  
Sandra Venturini ◽  
Marisa Tamaro ◽  
Carlo Montibragadin ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Chinese Hamster ◽  
Mutation Induction ◽  
Chinese Hamster Cells ◽  
Near Ultraviolet

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Mohd Ann Amirul Zulffiqal Md Sahar ◽  
Zainuriah Hassan ◽  
Sha Shiong Ng ◽  
Way Foong Lim ◽  
Khai Shenn Lau ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Output ◽  
Emission Peak ◽  
Organic Chemical ◽  
Peak Wavelength ◽  
Content Type ◽  
Light Emitting ◽  
Near Ultraviolet

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.

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