Gene Flow Pattern and Swimming Ability of the Pocket Gopher

1963 ◽  
Vol 8 (2) ◽  
pp. 85 ◽  
Author(s):  
Thomas E. Kennerly
Plant Gene ◽  
2020 ◽  
Vol 21 ◽  
pp. 100206 ◽  
Author(s):  
Bhuwnesh Goswami ◽  
Rekha Rankawat ◽  
Wahlang Daniel Regie ◽  
Bhana Ram Gadi ◽  
Satyawada Rama Rao

2020 ◽  
Vol 7 (10) ◽  
pp. 191731
Author(s):  
Takefumi Yorisue ◽  
Akira Iguchi ◽  
Nina Yasuda ◽  
Masaru Mizuyama ◽  
Yuki Yoshioka ◽  
...  

Marine cave habitats in the Ryukyu Islands, Indo-West Pacific, are located at the northern edge of the distribution of many cave-dwelling species. At distribution margins, gene flow is often more restricted than that among core populations due to the smaller effective population size. Here, we used high-throughput sequencing technology to investigate the gene flow pattern among three sampling sites of a marine cave-dwelling species at the margin of its distribution range. We collected individuals of the barbouriid shrimp Parhippolyte misticia from three marine caves in the Ryukyu Islands and performed population genetic analyses by means of multiplexed inter-simple sequence repeat genotyping by sequencing. Based on 62 single-nucleotide polymorphism markers, no clear population structure or directional gene flow pattern was found among the three sites. These results were unexpected because previous studies of other stygobitic shrimps in this region did find significant population genetic structures and northward directional gene flow patterns . Together, these inconsistent findings imply that marine cave-dwelling species in the region have different mechanisms of larval dispersal. Future studies on larval ecology and the biotic and abiotic factors influencing gene flow patterns are needed to clarify the mechanisms underlying the population dynamics of marine cave-dwelling species.


2008 ◽  
Vol 255 (11) ◽  
pp. 3819-3826 ◽  
Author(s):  
Greuk Pakkad ◽  
Saneyoshi Ueno ◽  
Hiroshi Yoshimaru

Heredity ◽  
1988 ◽  
Vol 61 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Marten Bos ◽  
Egbert van der Haring

2013 ◽  
Vol 29 (1) ◽  
pp. 1-18 ◽  
Author(s):  
María de Lourdes Muñoz ◽  
Ricardo F. Mercado-Curiel ◽  
Alvaro Diaz-Badillo ◽  
Gerardo Pérez Ramirez ◽  
William C. Black
Keyword(s):  

Author(s):  
Y. Pan

The D defect, which causes the degradation of gate oxide integrities (GOI), can be revealed by Secco etching as flow pattern defect (FPD) in both float zone (FZ) and Czochralski (Cz) silicon crystal or as crystal originated particles (COP) by a multiple-step SC-1 cleaning process. By decreasing the crystal growth rate or high temperature annealing, the FPD density can be reduced, while the D defectsize increased. During the etching, the FPD surface density and etch pit size (FPD #1) increased withthe etch depth, while the wedge shaped contours do not change their positions and curvatures (FIG.l).In this paper, with atomic force microscopy (AFM), a simple model for FPD morphology by non-crystallographic preferential etching, such as Secco etching, was established.One sample wafer (FPD #2) was Secco etched with surface removed by 4 μm (FIG.2). The cross section view shows the FPD has a circular saucer pit and the wedge contours are actually the side surfaces of a terrace structure with very small slopes. Note that the scale in z direction is purposely enhanced in the AFM images. The pit dimensions are listed in TABLE 1.


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