The Le Chatelier Principle in Convex Programming

1976 ◽  
Vol 43 (1) ◽  
pp. 143 ◽  
Author(s):  
Gerald Leblanc ◽  
Paul Van Moeseke
Keyword(s):  
Convex Programming ◽  
Le Châtelier Principle ◽  
Le Chatelier Principle

Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent

2012 ◽  
Vol 195 ◽  
pp. 50-54
Author(s):  
Hsing Chen Wu ◽  
Emanuel I. Cooper ◽  
Heng Kai Hsu
Keyword(s):  
Silicon Nitride ◽  
Phosphoric Acid ◽  
Boiling Point ◽  
Silicon Oxide ◽  
Nitride Layer ◽  
Wet Etching ◽  
High Boiling Point ◽  
Le Châtelier Principle ◽  
Le Chatelier Principle

Conventional wet etching techniques for selectively removing silicon nitride (Si3N4) have utilized hot (approximately 145-180°C) aqueous phosphoric acid (H3PO4) solutions (often referred to as hot phos). The typical Si3N4:SiO2 selectivity is about 40:1 when using 85% fresh hot phosphoric acid. Advantageously, as the nitride layer is removed, hydrated silicon oxide forms and dissolves in the etchant. Consistent with Le Chatelier principle, this inhibits the additional removal of silicon oxide from the device surface; thus selectivity gradually increases with use [.

Application of the Le Chatelier principle on gas reactions

1996 ◽  
Vol 121 (1-2) ◽  
pp. 167-177 ◽  
Author(s):  
Zi-Kui Liu ◽  
John Ågren ◽  
Mats Hillert
Keyword(s):  
Gas Reactions ◽  
Le Châtelier Principle ◽  
Le Chatelier Principle
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