Perturbation theory approach for a class of hybrid switching networks with small transit flows

1990 ◽  
Vol 22 (1) ◽  
pp. 211-229 ◽  
Author(s):  
M. Ya. Kelbert ◽  
R. P. Kopeika ◽  
R. N. Shamsiev ◽  
Yu. M. Sukhov
Keyword(s):  
Perturbation Theory ◽  
High Temperature ◽  
Existence And Uniqueness ◽  
Stationary Regime ◽  
Infinite Graphs ◽  
Circuit Switching ◽  
Low Density ◽  
Theory Approach ◽  
Switching Networks ◽  
Hybrid Switching

A method originating from statistical mechanics (low-density and high-temperature expansions) is used to prove the existence and uniqueness of a stationary regime for switching networks on finite or infinite graphs. The main assumption is that the message (customer) flows circulating through the network are ‘localized' in the sense that, for any message, the probability of having a long path is rapidly decreasing (and, moreover, a path of a ‘typical' message consists of one line). The switching rule combines message-switching and circuit-switching principles. The stationary regime for the network under consideration may be treated as a ‘small perturbation' of the ‘idealized' regime in the totally decoupled network where all the messages have single line paths.

Perturbation theory approach for a class of hybrid switching networks with small transit flows

1990 ◽  
Vol 22 (01) ◽  
pp. 211-229 ◽  
Author(s):  
M. Ya. Kelbert ◽  
R. P. Kopeika ◽  
R. N. Shamsiev ◽  
Yu. M. Sukhov
Keyword(s):  
Perturbation Theory ◽  
High Temperature ◽  
Existence And Uniqueness ◽  
Stationary Regime ◽  
Infinite Graphs ◽  
Circuit Switching ◽  
Low Density ◽  
Theory Approach ◽  
Switching Networks ◽  
Hybrid Switching

A method originating from statistical mechanics (low-density and high-temperature expansions) is used to prove the existence and uniqueness of a stationary regime for switching networks on finite or infinite graphs. The main assumption is that the message (customer) flows circulating through the network are ‘localized' in the sense that, for any message, the probability of having a long path is rapidly decreasing (and, moreover, a path of a ‘typical' message consists of one line). The switching rule combines message-switching and circuit-switching principles. The stationary regime for the network under consideration may be treated as a ‘small perturbation' of the ‘idealized' regime in the totally decoupled network where all the messages have single line paths.

Circuit-switching networks with priorities on a one-dimensional lattice

1989 ◽  
Vol 26 (04) ◽  
pp. 901-905
Author(s):  
Rahim Shamsiev
Keyword(s):  
Existence And Uniqueness ◽  
Stationary Regime ◽  
Switching Network ◽  
Circuit Switching ◽  
Switching Networks ◽  
Dimensional Lattice ◽  
One Dimensional

We prove existence and uniqueness of a stationary regime for a model of a circuit-switching network with infinitely many nodes.

Circuit-switching networks with priorities on a one-dimensional lattice

1989 ◽  
Vol 26 (4) ◽  
pp. 901-905 ◽  
Author(s):  
Rahim Shamsiev
Keyword(s):  
Existence And Uniqueness ◽  
Stationary Regime ◽  
Switching Network ◽  
Circuit Switching ◽  
Switching Networks ◽  
Dimensional Lattice ◽  
One Dimensional

We prove existence and uniqueness of a stationary regime for a model of a circuit-switching network with infinitely many nodes.

scholarly journals High-density Néel-type magnetic skyrmion phase stabilized at high temperature

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Hee Young Kwon ◽  
Kyung Mee Song ◽  
Juyoung Jeong ◽  
Ah-Yeon Lee ◽  
Seung-Young Park ◽  
...  
Keyword(s):  
High Temperature ◽  
High Density ◽  
Low Density ◽  
Memory Devices ◽  
Magnetic Multilayer ◽  
Multilayer Systems ◽  
Micromagnetic Simulations ◽  
Transmission Electron ◽  
Ultrahigh Density ◽  
Lorentz Transmission Electron Microscopy

AbstractThe discovery of a thermally stable, high-density magnetic skyrmion phase is a key prerequisite for realizing practical skyrmionic memory devices. In contrast to the typical low-density Néel-type skyrmions observed in technologically viable multilayer systems, with Lorentz transmission electron microscopy, we report the discovery of a high-density homochiral Néel-type skyrmion phase in magnetic multilayer structures that is stable at high temperatures up to 733 K (≈460 °C). Micromagnetic simulations reveal that a high-density skyrmion phase can be stabilized at high temperature by deliberately tuning the magnetic anisotropy, magnetic field, and temperature. The existence of the high-density skyrmion phase in a magnetic multilayer system raises the possibility of incorporating chiral Néel-type skyrmions in ultrahigh-density spin memory devices. Moreover, the existence of this phase at high temperature shows its thermal stability, demonstrating the potential for skyrmion devices operating in thermally challenging modern electronic chips.

A study of pest oxidation in polycrystalline MoSi2

1992 ◽  
Vol 7 (10) ◽  
pp. 2747-2755 ◽  
Author(s):  
C.G. McKamey ◽  
P.F. Tortorelli ◽  
J.H. DeVan ◽  
C.A. Carmichael
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Stoichiometric Ratio ◽  
Low Density ◽  
High Melting ◽  
Phase Boundaries ◽  
High Melting Point ◽  
Good Oxidation Resistance ◽  
Intermediate Temperature Range ◽  
Physical Defects

MoSi2 is a promising high-temperature material with low density (6.3 g/cm3), high melting point (2020 °C), and good oxidation resistance at temperatures to about 1900 °C. However, in the intermediate temperature range between 400 and 600 °C, it is susceptible to a “pest” reaction which causes catastrophic disintegration by a combination of oxidation and fracture. In this study, we have used polycrystalline MoSi2, produced by arc-casting of the pure elements and by cold and hot pressing of alloy powders, to characterize the pest reaction and to determine the roles of composition, grain or phase boundaries, and physical defects on the oxidation and fracture of specimens exposed to air at 500 °C. It was found that pest disintegration occurs through transport of oxygen into the interior of the specimen along pre-existing cracks and/or pores, where it reacts to form MoO3 and SiO2. The internal stress produced during the formation of MoO3 results in disintegration to powder. Near the stoichiometric ratio, the susceptibility to pest disintegration increases with increasing molybdenum content and with decreasing density. Silicon-rich alloys were able to form protective SiO2 and showed no indication of disintegration, even at densities as low as 60%.

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