scholarly journals Inversion charge density of MOS transistor with generalized logistic functions

2018 ◽  
Vol 50 (2) ◽  
pp. 225-235
Author(s):  
Tijana Kevkic ◽  
Vladica Stojanovic ◽  
Vera Petrovic ◽  
Dragan Randjelovic
Keyword(s):  
Charge Density ◽  
Inversion Layer ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Smooth Transition ◽  
Smoothing Factor ◽  
Mos Transistor ◽  
Wide Range ◽  
Inversion Charge ◽  
Quantum Mechanical Effects

In this paper, the expression for the charge density in inversion layer at the surface of semiconductor has been improved. The improvement is related to the replacement of an empirical smoothing factor by new one which has generalized logistic (GL) functional form. The introduction of the GL function of the second type in the original interpolating expression leads to continual and smooth transition of the inversion charge density (ICD) between different regions of metal-oxide-semiconductor (MOS) operation. Moreover, in this way any empirical determinations are avoided. The simulated values of the ICD match closely with the numerical results of implicit charge sheet model for a wide range of dopant concentration and oxide thickness. In addition, the proposed GL fitting procedure has been also extended in the case where quantum mechanical effects play important role in inversion mode of scaled MOS devices.

scholarly journals A comparative study of hole and electron inversion layer quantization in MOS structures

2010 ◽  
Vol 7 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Amit Chaudhry ◽  
Nath Roy
Keyword(s):  
Charge Density ◽  
Marked Decrease ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Variation Approach ◽  
Inversion Charge ◽  
Mos Structures ◽  
Good Agreement

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs

2020 ◽  
Vol 61 ◽  
pp. 88-96
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Charge Density ◽  
Current Model ◽  
Mathematical Expression ◽  
Drain Current ◽  
Quantum Effects ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Double Gate ◽  
Inversion Charge

In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.

Analytical Quantum Model for Germanium Channel Gate-All-Around (GAA) MOSFET

2019 ◽  
Vol 59 ◽  
pp. 137-148 ◽  
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Inversion Layer ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Quantum Confinement Effects ◽  
Charge Model ◽  
Proposed Model ◽  
Inversion Charge ◽  
Quantum Version ◽  
Quantum Mechanical Effects

The paper proposes analytical model for Gate-All-Around Metal Oxide Semiconductor Field Effect Transistor (GAA-MOSFET) for germanium channel including quantum mechanical effects. It is achieved by solving coupled Schrodinger-Poisson’s equation using variational approach. The proposed model takes quantum confinement effects to obtain charge centroid and inversion charge model. By using these models the quantum version of inversion layer capacitance, inversion charge distribution function and Drain current expressions are modelled and the performance evaluation of the developed model is compared with Silicon channel GAA-MOSFET. Analytically modelled expressions are verified by comparing the model with simulation results.

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

2013 ◽  
Vol 12 (01) ◽  
pp. 1350005 ◽  
Author(s):  
VIMALA PALANICHAMY ◽  
N. B. BALAMURUGAN
Keyword(s):  
Numerical Solutions ◽  
Inversion Layer ◽  
Drain Current ◽  
Quantum Effects ◽  
Schrodinger Equations ◽  
Double Gate ◽  
Schrödinger Equations ◽  
Inversion Charge ◽  
Physical Insight ◽  
Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

scholarly journals Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

2011 ◽  
Vol 8 (2) ◽  
pp. 147-154
Author(s):  
Amit Chaudhry ◽  
Nath Jatindra
Keyword(s):  
Threshold Voltage ◽  
Crystal Orientation ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Inversion Charge ◽  
Effect Transistor ◽  
Good Agreement

An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.

A Comparison of Quantum Correction Models for Nanoscale MOS Structures under Inversion Conditions

2005 ◽  
Vol 480-481 ◽  
pp. 603-610 ◽  
Author(s):  
Yiming Li
Keyword(s):  
Quantum Correction ◽  
Semiconductor Device ◽  
Local Density ◽  
Inversion Layer ◽  
Oxide Semiconductor ◽  
Concentration Peak ◽  
Inversion Charge ◽  
Charge Concentration ◽  
Classical Transport ◽  
Model Features

Quantum correction model features the correction of the inversion layer charge on different classical transport models in semiconductor device simulation. This approach has successfully been of great interest in the recent years. Considering a metal-oxide-semiconductor (MOS) structure in this paper, the Hänsch, the modified local density approximation (MLDA), the density-gradient (DG), the effective potential (EP), and our models are investigated computationally and compared systematically with the result of the Schrödinger-Poisson (SP) model. In terms of the accuracy for (1) the position of the charge concentration peak, (2) the maximum of the charge concentration, (3)the total inversion charge sheet density, and (4) the average inversion charge depth, these well-established models are examined simultaneously. The DG model requires the solution of a boundary value problem, the EP model overestimates the position of the charge concentration peak and the maximum of the charge concentration, our explicit model demonstrates good accuracy among models.

The influence of a mounting manner of power MOS transistors on characteristics of the Totem-Pole circuit with RLC load

2016 ◽  
Vol 33 (3) ◽  
pp. 176-180 ◽  
Author(s):  
Pawel Górecki ◽  
Krzysztof Górecki
Keyword(s):  
The Other ◽  
Oxide Semiconductor ◽  
Mos Transistors ◽  
Content Type ◽  
Mos Transistor ◽  
Self Heating ◽  
Cross Section Area ◽  
Section Area ◽  
Wide Range ◽  
State Resistance

Purpose The paper aims to consider the problem of the influence of mounting power metal-oxide semiconductor (MOS) transistors operating in the Totem–Pole circuit on energy losses in this circuit. Design/methodology/approach Using the computer simulation in SPICE software, the influence of such factors as on-state resistance of the channel of the MOS transistor, the self-heating phenomena in this transistor and resistance of wires connecting transistors with the other part of the circuit on characteristics of the considered circuit operating with resistor, inductor and capacitor (RLC) load is analyzed. The selected results of calculations are compared with the results of measurements. Findings On the basis of the obtained results of calculations, some recommendations concerning the manner of mounting the considered transistors, assuring a high value of watt-hour efficiency of the process of energy transfer to the load are formulated. Research limitations/implications The investigations were performed in the wide range of the frequency of the signal stimulating the considered circuit, but the results of calculations were presented for 2 selected values of this frequency only. Practical implications The considered analysis was performed for the circuit dedicated to power supplied of an elecrolyser. Originality/value Presented results of calculations prove that in some situations, the value of watt-hour efficiency of the considered circuit is determined by the length and the cross-section area of the applied wires bringing the signal to the connectors of the transistors and to load. On the other hand, self-heating phenomena in the power MOS transistors can lead to doubling power losses in these devices.

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