scholarly journals Study of barium bismuth titanate prepared by mechanochemical synthesis

2009 ◽  
Vol 41 (3) ◽  
pp. 329-335 ◽  
Author(s):  
Z.Z. Lazarevic ◽  
J. Bobic ◽  
N.Z. Romcevic ◽  
N. Paunovic ◽  
B.D. Stojanovic

Barium-bismuth titanate, BaBi4Ti4O15 (BBT), a member of Aurivillius bismuth-based layer-structure perovskites, was prepared from stoichiometric amounts of barium titanate and bismuth titanate obtained via mechanochemical synthesis. Mechanochemical synthesis was performed in air atmosphere in a planetary ball mill. The reaction mechanism of BaBi4Ti4O15 and the preparation and characteristics of BBT ceramic powders were studied using XRD, Raman spectroscopy, particle analysis and SEM. The Bi-layered perovskite structure of BaBi4Ti4O15 ceramic forms at 1100 ?C for 4 h without a pre-calcination step. The microstructure of BaBi4Ti4O15 exhibits plate-like grains typical for the Bi-layered structured material and spherical and polygonal grains. The Ba2+ addition leads to changes in the microstructure development, particularly in the change of the average grain size.

2009 ◽  
Vol 3 (1-2) ◽  
pp. 9-12 ◽  
Author(s):  
Jelena Bobic ◽  
Mirjana Vijatovic ◽  
Tadej Rojac ◽  
Biljana Stojanovic

BaBi4Ti4O15 (BBiT) was prepared from stoichiometric amounts of BaTiO3 (BT) and Bi4Ti3O12 (BIT) obtained via mechanochemical synthesis. Mechanochemical synthesis was performed in air atmosphere in a planetary ball mill. BBiT ceramics were sintered at 1100?C, 1110?C and 1120?C for 1 h without pre-calcination step. The formation of phase and crystal structure of BT, BIT and BBiT were verified using X-ray analysis. The morphology of obtained powders and microstructure were examined using scanning electron microscopy. The electrical properties of sintered samples were carried out and BBiT shows behaviour typical for relaxor ferroelectrics and dielectric constant at room temperature is approximately 93. .


2007 ◽  
Vol 280-283 ◽  
pp. 845-848
Author(s):  
Dan Xie ◽  
Wei Pan ◽  
Tian Ling Ren ◽  
Li Tian Liu

The preparation and the microstructure of BaBi4Ti4O15 (BBT) thin films were reported in the paper. BBT thin films were fabricated on silicon substrate using a modified Sol-Gel technique. A key issue of Sol-Gel processing is the chemical reaction and mechanism of precursor solution, which governs the crystallization and characteristics of the final oxide layer. Ethanolamine is an effective complexation reagent of Bi3+, which could moderate the acidity of precursor. When pH value is about 3.5, the stable and uniform BBT precursor solution could be obtained. The Bi-layered perovskite structure of BBT forms at 750°C. The morphology of the grains in BBT thin films is spheroidal and the grain size is about 120nm.


2008 ◽  
Vol 368 (1) ◽  
pp. 145-153 ◽  
Author(s):  
J. D. Bobić ◽  
B. D. StojanoviĆ ◽  
C. O. Paiva-Santos ◽  
L. J. Zivkovic ◽  
M. M. Vijatović ◽  
...  

2008 ◽  
Vol 368-372 ◽  
pp. 95-97
Author(s):  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
Chong Qing Huang ◽  
K.L. Su ◽  
...  

The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively.


2013 ◽  
Vol 591 ◽  
pp. 212-215 ◽  
Author(s):  
Chong Qing Huang ◽  
J. Liu ◽  
M. Chen ◽  
X.A. Mei

The electrical properties of Yb-doped bismuth titanate,Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BYbT ceramic with x=0.75 were above 16μC/cm2 and 75KV/cm , respectively.


2012 ◽  
Vol 512-515 ◽  
pp. 1329-1332
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
R.F. Liu ◽  
Chong Qing Huang ◽  
J. Liu

The electrical properties of Tb4O7-bismuth titanate (Bi3.3Tb0.6Ti3O12) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Tb-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Tb-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform. Tb-doped sample exhibit randomly oriented and plate-like morphology.


2012 ◽  
Vol 624 ◽  
pp. 162-165
Author(s):  
C.Q. Huang ◽  
X.B. Liu ◽  
X.A. Mei ◽  
J. Liu

The electrical properties of Er2O3-doped bismuth titanate,Bi4-xErxTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BET ceramic with x=0.8 were above 20μC/cm2 and 65KV/cm , respectively.


2011 ◽  
Vol 492 ◽  
pp. 222-225
Author(s):  
J. Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang

Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.


2006 ◽  
Vol 518 ◽  
pp. 125-130 ◽  
Author(s):  
Z.Ž. Lazarević ◽  
B.D. Stojanović ◽  
José Arana Varela

Our efforts were directed to the preparation of bismuth titanate – Bi4Ti3O12 (BIT) by mechanically assisted synthesis. The mechanical activation was applied to prepare bismuth titanate, Bi4Ti3O12, from bismuth oxide, Bi2O3, and titanium oxide, TiO2 (in an anatase crystal form). Mechanochemical synthesis was performed in a planetary ball mill in air atmosphere. Bismuth titanate ceramics was obtained by sintering at 1000 oC. The formation of Bi4Ti3O12 in the sintered samples was confirmed by X-ray diffraction analysis. Scanning electron microscopy, SEM, was used to study the particle size and powder morphology. The obtained results indicate that Bi4Ti3O12 from the powder synthesized by high-energy ball milling exhibits good sinterability, showing advantage of the mechanochemical process over conventional solid-state reaction.


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