scholarly journals Effect of Ni/Nb on structure, electrical and ferroelectric properties of 0.5PNN-0.5PZT ceramics

2015 ◽  
Vol 9 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Rashmi Gupta ◽  
Seema Verma ◽  
Deepa Singh ◽  
Karan Singh ◽  
Krishen Bamzai
Keyword(s):  
Grain Size ◽  
Dielectric Relaxation ◽  
Lead Zirconate Titanate ◽  
Remnant Polarization ◽  
Inverse Relationship ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Cole Plot ◽  
Conventional Solid State Reaction

The solid solutions of lead nickel niobate (PNN) and lead zirconate titanate (PZT), with general formula 0.5 Pb(NixNb1-x)O3-0.5 PZT, where x = 1/3, 1/2 and 2/3 and Zr/Ti = 50/50, were prepared by conventional solid state reaction technique. The perovskite phase formation and morphology were examined by powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. From microstructure investigations, the grain size was found to lie in the range of 0.2-1.1 ?m. Diffuse phase transition and dielectric relaxation was obtained for all three compositions. The nature of dielectric relaxation was investigated through complex plane Argand plot or Cole-Cole plot. It was found that both grains as well as grain boundary contribute to dielectric relaxation. A direct correlation between the grain size and electrical properties was obtained. The remnant polarization and grain size were found to follow the inverse relationship. The inverse relationship between remnant polarization and grain size was established.

Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 613-616
Author(s):  
Dae Jin Yang ◽  
Seong Je Cho ◽  
Jong Oh Kim ◽  
Won Youl Choi
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Reactive Sputtering ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Films

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

Effect of Barium Titanate Additives on Dielectric Property of PLZT Ceramics

2015 ◽  
Vol 804 ◽  
pp. 21-24
Author(s):  
Ladapak Chumprasert ◽  
Narit Funsueb ◽  
Apichart Limpichaipanit ◽  
Athipong Ngamjarurojana
Keyword(s):  
Barium Titanate ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Dielectric Behavior ◽  
Rhombohedral Structure ◽  
Soaking Time ◽  
Oxide Powders ◽  
Formation And Evolution

Barium titanate (BT) additive in lanthanum modified lead zirconate titanate (PLZT) was used to modify the microstructure and resultant properties of (1-x) PLZT– x BT where x= 0, 0.05, 0.10, 0.15, 0.20 and 0.25. Oxide powders were synthesized by mixed oxide synthetic route via a rapid vibro-milling technique. All of samples were sintered at 1275°C with the soaking time of 4 h. The ceramic samples were investigated for phase formation and evolution, dielectric behavior and ferroelectric properties. Introduction of BT in PLZT lattice resulted in ferroelectric tetragonal-rhombohedral structure, and further increase of BT content resulted in stabilizing the ferroelectric tetragonal perovskite phase. Dielectric behavior and ferroelectric properties were examined as a function of BT content.

scholarly journals Perovskite phase formation and ferroelectric properties of the lead nickel niobate–lead zinc niobate–lead zirconate titanate ternary system

2003 ◽  
Vol 18 (12) ◽  
pp. 2882-2889 ◽  
Author(s):  
Naratip Vittayakorn ◽  
Gobwute Rujijanagul ◽  
Tawee Tunkasiri ◽  
Xiaoli Tan ◽  
David P. Cann
Keyword(s):  
Ternary System ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Lead Zinc Niobate ◽  
Lead Zinc ◽  
Lead Nickel

The ternary system of lead nickel niobate Pb(Ni1/3Nb2/3)O3 (PNN), lead zinc niobate Pb(Zn1/3Nb2/3)O3 (PZN), and lead zirconate titanate Pb(Zr1/2Ti1/2)O3 (PZT) was investigated to determine the influence of different solid state processing conditions on dielectric and ferroelectric properties. The ceramic materials were characterized using x-ray diffraction, dielectric measurements, and hysteresis measurements. To stabilize the perovskite phase, the columbite route was utilized with a double crucible technique and excess PbO. The phase-pure perovskite phase of PNN–PZN–PZT ceramics was obtained over a wide compositional range. It was observed that for the ternary system 0.5PNN–(0.5 - x)PZN–xPZT, the change in the transition temperature (Tm) is approximately linear with respect to the PZT content in the range x [H11505] 0 to 0.5. With an increase in x, Tm shifts up to high temperatures. Examination of the remanent polarization (Pr) revealed a significant increase with increasing x. In addition, the relative permittivity ([H9280]r) increased as a function of x. The highest permittivities ([H9280]r [H11505] 22,000) and the highest remanent polarization (Pr [H11505] 25 μC/cm2) were recorded for the binary composition 0.5Pb(Ni1/3Nb2/3)O3–0.5Pb(Zr1/2Ti1/2)O3.

scholarly journals Infrared and Structural Studies of Micro and Nano-crystalline Ta Doped Lead Zirconate Titanate Ceramics

2018 ◽  
Vol 68 (4) ◽  
pp. 412
Author(s):  
Praveen Kumar ◽  
Dr MBalasubramaniam ◽  
BS Murty ◽  
KM Rajan
Keyword(s):  
Grain Size ◽  
Infrared Spectroscopy ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Wave Number ◽  
Content Increase ◽  
Nano Crystalline ◽  
Fourier Transformation Infrared Spectroscopy ◽  
Titanate Ceramics

<p> In this paper, influence of additives on structural properties of Tantalum (<em>Ta</em>) doped PZT ceramics, prepared by solid-state oxide and mechanical activation (MA) routes, has been studied. The Fourier transformation infrared spectroscopy (FTIR) studies, are done to understand the structural interactions, confirmed that the wave number and bond energy decreases with the increase in Ta content accompanied by decrease in grain size. FTIR spectrum becomes broader in nanocrystalline Ta-PZT. The fraction of tetragonal phase decrease along with reduction in grain size as the <em>Ta </em>content increase. The remnant polarisation and coercive field also follows the similar trend on <em>Ta </em>doping. It is seen that infrared spectroscopy results corroborate the structure and ferroelectric properties of PZT materials.</p>

scholarly journals Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 2926 ◽  
Author(s):  
Nikolay Mukhin ◽  
Dmitry Chigirev ◽  
Liubov Bakhchova ◽  
Andrey Tumarkin
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Oxide ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Experimental Studies ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Heterophase Structure ◽  
Pzt Films ◽  
A Charge

Experimental studies were conducted on the effects of lead oxide on the microstructure and the ferroelectric properties of lead zirconate-titanate (PZT) films obtained by the method of radio frequency (RF) magnetron sputtering of a ceramic PZT target and PbO2 powder with subsequent heat treatment. It is shown that the change in ferroelectric properties of polycrystalline PZT films is attributable to their heterophase structure with impurities of lead oxide. It is also shown that, even in the original stoichiometric PZT film, under certain conditions (temperature above 580 °C, duration greater than 70 min), impurities of lead oxide may be formed. The presence of a sublayer of lead oxide leads to a denser formation of crystallization centers of the perovskite phase, resulting in a reduction of the grain size as well as the emergence of a charge on the lower interface. The formation of the perovskite structure under high-temperature annealing is accompanied by the diffusion of lead into the surface of the film. Also shown is the effect of the lead ions segregation on the formation of the self-polarized state of thin PZT films.

Effect of Pb Excess Content on Microstructure and Electrical Properties of Sol Gel Derived PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhan-jie Wang ◽  
Ryutaro Maeda ◽  
Kaoru Kikuchi
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Starting Solution ◽  
Pzt Films

AbstractLead zirconate titanate (PZT) thin films were fabricated by a three-step heat-treatment process which involves the addition of -10, 0 and 10 mol% excess Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron probe microanalysis (EPMA), respectively. The well-crystallized perovskite phase and the (100) preferred orientation were obtained by adding 10% excess Pb to the starting solution. It was found that PZT films to which 10% excess Pb was added had better electric properties. The remanent polarization and the coercive field of this film were 34.8 μC/cm2 and 41.7 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1600 and 0.04, respectively. Dielectric and ferroelectric properties were correlated to the microstructure of the films.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

scholarly journals Ferroelectric properties of lead‐zirconate‐titanate films prepared by laser ablation

1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate

Relationships Between Microstructure and Reliability in Pzt Mems

2001 ◽  
Vol 666 ◽  
Author(s):  
B.W. Olson ◽  
L.M. Randall ◽  
C.D. Richards ◽  
R.F. Richards ◽  
D.F. Bahr
Keyword(s):  
Grain Size ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Electrical Energy ◽  
Lead Zirconate ◽  
Fatigue Tests ◽  
Operating Conditions ◽  
Processing Route ◽  
Bulge Testing ◽  
Sol Gel Process

ABSTRACTPiezoelectric oxide films, such as lead zirconate titanate (PZT), are now being integrated into MEMS applications. Many PZT derived systems are deposited using a sol-gel process, which can be used in a microelectronics processing route using spin coating as the deposition method. An application of interest for PZT films is in power generation, where a flexing membrane is used to transform mechanical to electrical energy. The current study was undertaken to identify the relationships between the processing, microstructure, and mechanical reliability of these films. Films were deposited onto both monolithic and bulk micromachined platinized silicon wafers using standard sol-gel chemistries, with roughness and grain size tracked using electron and scanning probe microscopy. Mechanical properties were evaluated in a dynamic bulge testing apparatus. Grain size variations in the Pt film between 35 and 125 nm are shown to have little effect on grain size of the subsequent PZT film and the adhesion of the PZT to the Pt film. Only the Pt film with 125 nm grains was shown to undergo any significant interfacial fracture. Fatigue tests suggest film lifetime is primarily limited by the number of pre- existing flaws in the film from processing. Reducing the microcrack density has been shown to produce films and devices that fail at strains of 1.4% and have mechanical fatigue lifetimes in excess of 100 million cycles at strains simulating the operating conditions.

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