scholarly journals Aurivillius BaBi4Ti4O15 based compounds: Structure, synthesis and properties

2013 ◽  
Vol 7 (3) ◽  
pp. 97-110 ◽  
Author(s):  
Jelena Bobic ◽  
Mirjana Vijatovic-Petrovic ◽  
Biljana Stojanovic
Keyword(s):  
High Temperature ◽  
Bismuth Titanate ◽  
Piezoelectric Materials ◽  
Random Access ◽  
Ferroelectric Materials ◽  
Synthesis Methods ◽  
Structure Synthesis ◽  
Ferroelectric Random Access Memories ◽  
Piezoelectric Devices ◽  
Barium Bismuth

The discovery of some Aurivillius materials with high Curie temperature or fatigue-free character suggests possible applications in high temperature piezoelectric devices or non-volatile ferroelectric random access memories. Furthermore, increasing concerns for environmental issues have promoted the study of new leadfree piezoelectric materials. Barium bismuth titanate (BaBi4Ti4O15 ), an Aurivillius compound, is promising candidate to replace lead-based materials, both as lead-free ferroelectric and high temperature piezoelectric. In this review paper, we report a detailed overview of crystal structure, different synthesis methods and characteristic properties of barium bismuth titanate ferroelectric materials.

scholarly journals Particle Size Effect of Lanthanum-Modified Bismuth Titanate Ceramics on Ferroelectric Effect for Energy Harvesting

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Sangmo Kim ◽  
Thi My Huyen Nguyen ◽  
Rui He ◽  
Chung Wung Bark
Keyword(s):  
Particle Size ◽  
Energy Harvesting ◽  
High Speed ◽  
High Performance ◽  
Bismuth Titanate ◽  
Vinylidene Fluoride ◽  
Piezoelectric Materials ◽  
Renewable Energy Sources ◽  
Particle Size Effect ◽  
Ferroelectric Materials

AbstractPiezoelectric nanogenerators (PNGs) have been studied as renewable energy sources. PNGs consisting of organic piezoelectric materials such as poly(vinylidene fluoride) (PVDF) containing oxide complex powder have attracted much attention for their stretchable and high-performance energy conversion. In this study, we prepared a PNG combined with PVDF and lanthanum-modified bismuth titanate (Bi4−XLaXTi3O12, BLT) ceramics as representative ferroelectric materials. The inserted BLT powder was treated by high-speed ball milling and its particle size reduced to the nanoscale. We also investigated the effect of particle size on the energy-harvesting performance of PNG without polling. As a result, nano-sized powder has a much larger surface area than micro-sized powder and is uniformly distributed inside the PNG. Moreover, nano-sized powder-mixed PNG generated higher power energy (> 4 times) than the PNG inserted micro-sized powder.

scholarly journals An approach to analyzing synthesis, structure and properties of bismuth titanate ceramics

2005 ◽  
Vol 37 (3) ◽  
pp. 199-216 ◽  
Author(s):  
Z. Lazarevic ◽  
B.D. Stojanovic ◽  
J.A. Varela
Keyword(s):  
Bismuth Titanate ◽  
Electronic Materials ◽  
Synthesis Method ◽  
Film Coating ◽  
Synthesis Methods ◽  
Structure And Properties ◽  
Good Resistance ◽  
Structure Synthesis ◽  
The Family ◽  
Titanate Ceramics

The family of bismuth titanate, Bi4Ti3O12 (BIT) layered-structured ferroelectrics materials is attractive from the viewpoint of their application as electronic materials such as dielectrics, piezoelectrics and pyroelectrics, because they are characterized by good stability of piezoelectric properties, a high Curie temperature and a good resistance vs temperature. Bismuth titanate (Bi4Ti3O12) powders can be prepared using different methods, depending if the creation will be film coating or ceramics. The structure and properties of bismuth titanate materials show a significance dependence on the applied synthesis method. In this review paper, we made an attempt to give an approach to analyzing the structure, synthesis methods and properties of bismuth titanate ferroelectrics materials. .

Phase transitions in Bi4Ti3O12

2019 ◽  
Vol 75 (6) ◽  
pp. 978-986 ◽  
Author(s):  
Vladimir B. Shirokov ◽  
Mikhail V. Talanov
Keyword(s):  
Phase Transitions ◽  
High Temperature ◽  
Low Temperature ◽  
Degrees Of Freedom ◽  
Landau Theory ◽  
Random Access ◽  
Ferroelectric Materials ◽  
High Symmetry ◽  
Structural Distortions ◽  
High Symmetry Phase

Bi4Ti3O12 is a representative of the Aurivillius family of layered perovskites. These are high-temperature ferroelectric materials with prospects for applications in random-access memory and are characterized by an extremely confused interaction of their structural degrees of freedom. Using group-theoretical methods, structural distortions in the Bi4Ti3O12 high-symmetry phase, caused by rotations of rigid octahedra and their displacements as a single unit, have been investigated, taking into account the connections between them. Within the Landau theory, a stable thermodynamic model of phase transitions with three order parameters has been constructed. It is shown that, according to the phenomenological phase diagram, the transition between the high-temperature tetragonal phase and the low-temperature ferroelectric can occur both directly and through intermediate states, including those observed experimentally. The role of improper ordered parameters and possible domain configurations in the structure formation of the low-temperature ferroelectric phase are discussed.

scholarly journals Enhancement of piezoelectric properties of lithium niobate thin films by different annealing parameters

2020 ◽  
Vol 6 (2) ◽  
pp. 47-52
Author(s):  
Roman N. Zhukov ◽  
K.S. Kushnerev ◽  
Dmitry A. Kiselev ◽  
Tatiana S. Ilina ◽  
Ilya V. Kubasov ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Piezoelectric Materials ◽  
Random Access ◽  
Piezoelectric Phase ◽  
Electro Optic ◽  
Wide Range ◽  
Probe Microscope ◽  
Ferroelectric Random Access Memories

Piezoelectric materials with useful properties find a wide range of applications including opto- and acousto- electronics. Lithium niobate in the form of a thin film is one of those promising materials and has a potential to improve ferroelectric random access memories devices, optical waveguides or acoustic delay lines by virtue of its physical characteristics, e.g. electro-optic coefficient, acoustic velocity, refractive indices etc. The key challenge to overcome is lithium nonstoichiometry as it leads to the appearance of parasite phases and thus aggravates physical and structural properties of a film. According to literature data, in order to obtain microcrystalline piezoelectric phase in previously amorphous films a set of methods is used. In our case we tried to synthesize LN films using congruent target and non-heated silicon substrate and then attain the piezoelectric phase by different annealing parameters. Afterwards LN films were compared to the ones synthesized on the silicon substrate with an additional buffer layer of platinum. Samples were studied by scanning probe microscope. Self-polarization vectors were defined. Based on domain structure images, the histograms of distribution of piezoresponse signals were built.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

scholarly journals Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2016 ◽  
Vol 06 (02) ◽  
pp. 1630003 ◽  
Author(s):  
Zhen Fan ◽  
Jingsheng Chen ◽  
John Wang
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Materials ◽  
Oxide Semiconductor ◽  
Next Generation ◽  
New Class ◽  
Generation Cost ◽  
Potential Applications ◽  
Cost Efficient ◽  
Ferroelectric Memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

scholarly journals High temperature ultrasonic sensor for fission gas characterization in MTR harsh environment

2018 ◽  
Vol 170 ◽  
pp. 04008
Author(s):  
O. Gatsa ◽  
P. Combette ◽  
E. Rozenkrantz ◽  
D. Fourmentel ◽  
C. Destouches ◽  
...  
Keyword(s):  
High Temperature ◽  
Thick Film ◽  
Screen Printing ◽  
Bismuth Titanate ◽  
Elevated Temperatures ◽  
Ultrasonic Sensor ◽  
High Resistivity ◽  
Materials Testing ◽  
Coupling Coefficients ◽  
Film Fabrication

In the contemporary world, the measurements in hostile environment is one of the predominant necessity for automotive, aerospace, metallurgy and nuclear plant. The measurement of different parameters in experimental reactors is an important point in nuclear power strategy. In the near past, IES (Institut d’Électronique et des Systèmes) on collaboration with CEA (Commissariat à l’Energie Atomique et aux Energies Alternatives) have developed the first ultrasonic sensor for the application of gas quantity determination that has been tested in a Materials Testing Reactor (MTR). Modern requirements state to labor with the materials that possess stability on its parameters around 350°C in operation temperature. Previous work on PZT components elaboration by screen printing method established the new basis in thick film fabrication and characterization in our laboratory. Our trials on Bismuth Titanate ceramics showed the difficulties related to high electrical conductivity of fabricated samples that postponed further research on this material. Among piezoceramics, the requirements on finding an alternative solution on ceramics that might be easily polarized and fabricated by screen printing approach were resolved by the fabrication of thick film from Sodium Bismuth Titanate (NBT) piezoelectric powder. This material exhibits high Curie temperature, relatively good piezoelectric and coupling coefficients, and it stands to be a good solution for the anticipated application. In this paper, we present NBT thick film fabrication by screen printing, characterization of piezoelectric, dielectric properties and material parameters studies in dependence of temperature. Relatively high resistivity in the range of 1.1013 Ohm.cm for fabricated thick film is explained by Aurivillius structure in which a-and b-layers form perovskite structure between oxides of c-layer. Main results of this study are presented and discussed in terms of feasibility for an application to a new sensor device operating at high temperature level (400°). Piezoelectric parameters enhancement and loss reduction at elevated temperatures are envisaged to be optimized. Further sensor development and test in MTR are expected to be realized in the near future.

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