scholarly journals The role of surface defects in hopg on the electrochemical and physical deposition of Ag

1999 ◽  
Vol 64 (7-8) ◽  
pp. 483-493 ◽  
Author(s):  
S. Strbac ◽  
Z. Rakocevic ◽  
K.I. Popov ◽  
M.G. Pavlovic ◽  
R. Petrovic
Keyword(s):  
Deposition Rate ◽  
Electrochemical Deposition ◽  
Substrate Surface ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
Exclusion Zone ◽  
Island Growth ◽  
Tunneling Microscopy ◽  
Physical Deposition

The role of defects on a substrate surface during the initial stages of nucleation and growth ofAg deposited electrochemically and physically on highly oriented pyrolytic graphite (HOPG) has been observed ex situ by scanning tunneling microscopy (STM). The silver was electrodeposited under current controlled electrochemical conditions at 26?A/cm2, which corresponded to a deposition rate of 0.1 monolayers (ML) per second. For comparison, physical deposition of Ag on HOPG was performed by DC Ar + ion sputtering, at the same deposition rate and for the same deposition times. In both cases, Ag grows in an island growth mode, but the distribution of the islands appears to be quite different. In physical deposition, the Ag islands are almost homogeneously distributed over the substrate surface and a slight accumulation of islands on steps does not contribut e significantly to the overallmorphology. This indicates the crucial role of point defects on the substrate in the initial stages of nucleation. In electrochemical deposition, more line d defects are observed after a flow of current, andtheir role in the beginning of the nucleat ion is more pronounced. Lined defects are responsible for the string-like shaped domains of deposited atoms. Also, the existence of string-like shaped nucleation exclusion zones is indicated. The problem of the formation of nucleation exclusion zones,which appear only in electrochemical deposition, has been reconsidered and a new explanaton of their formation is given. A mathematical model for the calculation of the radius of the nucleati on exclusion zone has been developed.

Scanning tunneling microscopy of E. coli RNA polymerase deposited onto an Au substrate by an electrochemical process

1991 ◽  
Vol 49 ◽  
pp. 378-379
Author(s):  
Rebecca W. Keller ◽  
Carlos Bustamante ◽  
David Bear
Keyword(s):  
Scanning Tunneling Microscope ◽  
Biological Sample ◽  
Substrate Surface ◽  
Electrochemical Process ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
E Coli ◽  
Preparation Techniques

Under ideal conditions, the Scanning Tunneling Microscope (STM) can create atomic resolution images of different kinds of samples. The STM can also be operated in a variety of non-vacuum environments. Because of its potentially high resolution and flexibility of operation, it is now being applied to image biological systems. Several groups have communicated the imaging of double and single stranded DNA.However, reproducibility is still the main problem with most STM results on biological samples. One source of irreproducibility is unreliable sample preparation techniques. Traditional deposition methods used in electron microscopy, such as glow discharge and spreading techniques, do not appear to work with STM. It seems that these techniques do not fix the biological sample strongly enough to the substrate surface. There is now evidence that there are strong forces between the STM tip and the sample and, unless the sample is strongly bound to the surface, it can be swept aside by the tip.

scholarly journals Templated quasicrystalline ordering of single elements and molecules

2014 ◽  
Vol 70 (a1) ◽  
pp. C81-C81
Author(s):  
H. R. Sharma ◽  
J. A. Smerdon ◽  
K. Nozawa ◽  
K. M. Young ◽  
T. P. Yadav ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Chemical Properties ◽  
Scanning Tunneling ◽  
Three Dimension ◽  
Tunneling Microscopy ◽  
Quantum Size ◽  
Adsorption Energies ◽  
Molecular Layers ◽  
Physical And Chemical ◽  
The Impact

We have used quasicrystals as templates for the exploration of new epitaxial phenomena. Several interesting results have been observed in the growth on surfaces of the common Al-based quasicrystals [1]. These include pseudomorphic monolayers, quasiperiodically modulated multilayer structures, and fivefold-twinned islands with magic heights influenced by quantum size effects [1]. Here we present our recent works on the growth of various elements and molecules on a new substrate, icosahedral (i) Ag-In-Yb quasicrystal, which have resulted in various epitaxial phenomena not observed previously. The growth of Pb on the five-fold surface of i-Ag-In-Yb yields a film which possesses quasicrystalline ordering in three-dimension [2]. Using scanning tunneling microscopy (STM) and DFT calculations of adsorption energies, we find that lead atoms occupy the positions of atoms in the rhombic triacontahedral (RTH) cluster, the building block of the substrate, and thus grow in layers with different heights and adsorption energies. The adlayer–adlayer interaction is crucial for stabilizing the epitaxial quasicrystalline structure. We will also present the first example of quasicrystalline molecular layers. Pentacene adsorbs at tenfold-symmetric sites of Yb atoms around surface-bisected RTH clusters, yielding quasicrystalline order [3]. Similarly, C-60 growth on the five-fold surface of i-Al-Cu-Fe at elevated temperature produces quasicrystalline layer, where the growth is mediated by Fe atoms on the substrate surface [3]. The finding of quasicrystalline thin films of single elements and molecules opens an avenue for further investigation of the impact of the aperiodic atomic order over periodic order on the physical and chemical properties of materials.

Silver Nanoparticles Self Assembled on HOPG: Unusual Behavior as Probed by Scanning Tunneling Microscopy

2005 ◽  
Vol 11 (S03) ◽  
pp. 158-161
Author(s):  
J. E. Andrade ◽  
H. B. Aquiar ◽  
F. Cunha
Keyword(s):  
Silver Nanoparticles ◽  
Electrochemical Deposition ◽  
Physical Vapor Deposition ◽  
Pyrolytic Graphite ◽  
Deep Understanding ◽  
Solid Surfaces ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Unusual Behavior ◽  
Step Edges

The controlled construction of nanostructures on solid surfaces for technological applications depends primarily on a deep understanding of the physical chemistry of the interface. Several methods have been devised to grow metallic nanostructures on solid surfaces, notably physical vapor deposition and electrodeposition. The electrochemical method led to the creation of a very promising technology called Electrochemical Step Edge Decoration (ESED) by the Penner group in Irvine, Ca. In this method, metallic nano and mesowires are built through electrochemical deposition on the step edges of the basal plane of Highly Oriented Pyrolytic Graphite (HOPG) [1]. The proposed growth mechanism is based on the Terrace-Ledge-Kink (TLK) model [2], in which the foreign adatoms nucleate the electrochemically induced growth of nanoparticles in the lower plane of step edges. White and collaborators [3], while studying the stability of gold nanoparticles electrodeposited on HOPG, noticed the preferential nucleation on the upper plane of step edges in stark opposition to the TLK model. They proposed that this preferential deposition is associated with a slippage of the atomic layer near the edge. This proposition indicates that the surface in the upper plane near the edge will present a decrease in the atomic distance in the plane, disrupting the registry with the underlying plane. To further assess this proposition we have devised another experimental approach where, instead of electrodepositing foreign adatoms for nucleation and growth, we deposited fully formed silver nanoparticles on HOPG through a Self Assembly mechanism and studied its spatial distribution. Through this approach, we intend to study the surface mobility of nanoparticles, as opposed to atomic species as studied in electrochemical deposition.

SiC SURFACE RECONSTRUCTION: RELEVANCY OF ATOMIC STRUCTURE FOR GROWTH TECHNOLOGY

1999 ◽  
Vol 06 (06) ◽  
pp. 1129-1141 ◽  
Author(s):  
U. STARKE ◽  
J. BERNHARDT ◽  
J. SCHARDT ◽  
K. HEINZ
Keyword(s):  
Silicon Oxide ◽  
Electronic Device ◽  
Defect Density ◽  
Ex Situ ◽  
Scanning Tunneling ◽  
Hydrogen Treatment ◽  
Tunneling Microscopy ◽  
Layer Stacking ◽  
Device Applications ◽  
Sic Wafer

Growth of SiC wafer material, of heterostructures with alternating SiC crystal modifications (polytypes), and of oxide layers on SiC are of importance for potential electronic device applications. By investigation of hexagonal SiC surfaces the importance of atomic surface structure for control of the respective growth processes involved is elucidated. Different reconstruction phases prepared by ex situ hydrogen treatment or by Si deposition and annealing in vacuum were analyzed using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) crystallography. The extremely efficient dangling bond saturation of the SiC(0001)-(3×3) phase allows step flow growth for monocrystalline homoepitaxial layers. A switch to cubic layer stacking can be induced on hexagonal SiC(0001) samples when a [Formula: see text] phase is prepared. This might serve as seed for polytype heterostructures. Finally, we succeeded in preparing an epitaxially well matching silicon oxide monolayer with [Formula: see text] periodicity on both SiC(0001) and SiC[Formula: see text]. This initial layer promises to facilitate low defect density oxide films for MOS devices.

ON THE ROLE OF KINKS AND STRAIN IN HETEROEPITAXIAL GROWTH: AN STM STUDY

2000 ◽  
Vol 07 (05n06) ◽  
pp. 673-677
Author(s):  
E. LUNDGREN ◽  
M. SCHMID ◽  
G. LEONARDELLI ◽  
A. HAMMERSCHMID ◽  
B. STANKA ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Scanning Tunneling Microscopy ◽  
Three Dimensional ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Heteroepitaxial Growth ◽  
Tunneling Microscopy ◽  
Exchange Diffusion

Interlayer diffusion of Co over steps of vacancy islands on the Pt(111) surface as studied by scanning tunneling microscopy is presented. It is demonstrated that Co atoms descend Pt steps by an exchange diffusion process at the step edge with the Pt atoms. Further, the exchange diffusion process is observed to occur at the corners (kinks) of the vacancy islands. The importance of kinks concerning whether the growth mode of a heteropitaxial film is two-dimensional or three-dimensional is demonstrated for the case of thin Co films on Pt(111). We argue that the strain in the Co film is to a large extent responsible for the kink formation.

Sign in / Sign up

Export Citation Format

Share Document