scholarly journals Microstructure and corrosion behavior of Zn-Co alloys deposited from three different plating baths

2011 ◽  
Vol 76 (11) ◽  
pp. 1537-1550 ◽  
Author(s):  
Jelena Bajat ◽  
Sanja Stevanovic ◽  
Bojan Jokic
Keyword(s):  
Crystallite Size ◽  
Open Circuit ◽  
Plating Bath ◽  
Corrosion Stability ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sulphate Chloride ◽  
Chemical Content ◽  
Lower Corrosion Rate ◽  
Co Alloys

The effects of plating baths of different composition on the microstructure and corrosion stability of Zn-Co alloy coatings were studied. Zn-Co alloys with the same Co content were deposited from chloride plating baths containing different amounts of Co2+ ions, as well as from a sulphate-chloride plating bath. The surface morphology and crystallite size were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The corrosion stability of the Zn- Co alloys was determined by following the change of the open circuit potential with time of immersion in a 3 % NaCl solution and by polarization measurements. The results showed a significant influence of the plating bath on the morphology and corrosion stability of the Zn-Co alloys. The surface of the alloy coatings deposited from the chloride baths were uniform and homogenous, whereas the deposit obtained from the sulphate-chloride bath was quite inhomogeneous. The corrosion stability of the homogenous Zn-Co deposits obtained by deposition from both chloride baths was higher than that of the deposit obtained from the sulphate-chloride bath. An increase in the Co content in the chlorideplating bath resulted in a reduction of the alloy crystallite size and it was shown that the alloy with the smaller crystallites of the two alloy deposits, although having the same chemical content, exhibited a lower corrosion rate.

SELF-ASSEMBLED Ge-DOTS FOR Si SOLAR CELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4347-4351 ◽  
Author(s):  
H. PRESTING ◽  
J. KONLE ◽  
H. KIBBEL
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Elevated Temperatures ◽  
Growth Conditions ◽  
Open Circuit ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type

Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers increase the infrared absorption in the base of the cell to achieve higher photocurrent which should overcome the loss in the open circuit voltage due to incorporation of a smaller bandgap material in the heterostructure. Up to 75 layers of Ge, each about 8 monolayers (ML) thick, separated by Si-spacer layers (9-18nm) have been deposited at rather elevated temperatures (700°C) on a standard 10Ωcm p-type Si-substrate. Island densities of 1011 cm -2 have been achieved by use of antimony (Sb) as surfactant. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the growth of Ge-islands under variuos growth conditions. Photocurrent measurements exhibit a higher photo-response in the infrared regime but a lower open circuit voltage of the fabricated solar cells compared to a Si-reference cell.

Performance Effect of ZnAl2O4 - SiO2 Thin Film for Wireless Patch Antenna Application

2014 ◽  
Vol 28 ◽  
pp. 141-150 ◽  
Author(s):  
Mohd Syafiq Zulfakar ◽  
Huda Abdullah ◽  
Mohammad Tariqul Islam ◽  
Wan Nasarudin Wan Jalal ◽  
Zalita Zainuddin ◽  
...  
Keyword(s):  
Crystallite Size ◽  
Patch Antenna ◽  
Sol Gel ◽  
Average Crystallite Size ◽  
Cubic Phase ◽  
Frequency Range ◽  
Performance Effect ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Polycrystalline of (1-x)ZnAl2O4 – xSiO2 compound with compositions of x = 0.00, 0.05, 0.10, 0.15, 0.20 and 0.25 have been prepared using sol-gel method. Structural properties was investigated by atomic force microscopy (AFM) and x-ray diffractometer (XRD). The AFM images analysis showed that the surface roughness of the highest composition had rougher surface compared with other samples. XRD measurement indicated that the crystallite size also increased with average crystallite size around 18 nm with cubic phase had been found. The dielectric permittivity value were measured with frequency range of 1 Hz to 1 MHz. It is showed that the dielectric value decreased as the freqeuncy was applied to the samples. The performance of the patch antenna showed that the antenna resonated at 3.30 GHz and give-13.87 dB with frequency range about 2 – 4 GHz.

scholarly journals The Features of Nano-objects Distribution on IV-VI Vapor-Phase Condensate Surface

2016 ◽  
Vol 17 (4) ◽  
pp. 471-475 ◽  
Author(s):  
Y.P. Saliy ◽  
M.A. Ruvinskiy ◽  
L.I. Nykyruy
Keyword(s):  
Image Processing ◽  
Atomic Force Microscopy ◽  
Crystallite Size ◽  
Vapor Phase ◽  
Force Microscopy ◽  
Technological Factors ◽  
Image Processing Techniques ◽  
Atomic Force ◽  
Statistical Hypotheses ◽  
Processing Techniques

The influence of technological factors for obtaining such as both time and temperature of evaporator and temperature of substrate on statistics of the objects on the surface of PbTe films doped by Bi and deposited from the vapor on ceramics substrate in vacuum has been investigated. The atomic force microscopy and the image processing techniques and testing of statistical hypotheses were used. The influence of technological factors on statistics of the surface crystallite size and their correlation to each other was analyzed.

scholarly journals Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

2020 ◽  
Vol 31 (40) ◽  
pp. 404003 ◽  
Author(s):  
Yonatan Calahorra ◽  
Wonjong Kim ◽  
Jelena Vukajlovic-Plestina ◽  
Anna Fontcuberta i Morral ◽  
Sohini Kar-Narayan
Keyword(s):  
Atomic Force Microscopy ◽  
Open Circuit ◽  
Conductive Atomic Force Microscopy ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force

Light Soaking and Thermal Annealing Effects on the Micro-Electrical Properties of Amorphous and Nanocrystalline Mixed-phase Silicon Solar Cells

2007 ◽  
Vol 989 ◽  
Author(s):  
Chunsheng Jiang ◽  
B. Yan ◽  
H. R. Moutinho ◽  
M. M. Al-Jassim ◽  
J. Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit ◽  
Mixed Phase ◽  
Silicon Solar Cells ◽  
Initial State ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current ◽  
Annealing Effects

AbstractWe report on the measurement of local current flow in hydrogenated amorphous and nanocrystalline mixed-phase n-i-p silicon solar cells in the initial, light-soaked, and annealed states using conductive atomic force microscopy (C-AFM). The C-AFM measurement shows that the nanometer-size grains aggregate, and the local current densities in the nanocrystalline aggregation areas decreased significantly after light soaking and recovered to values similar to the initial state after annealing at a high temperature in a vacuum. This result supports the model of two parallel-connected diodes for explaining the light-induced open-circuit voltage increase in the mixed-phase solar cells.

scholarly journals Roughness development in electrodeposited soft magnetic CoNiFe films in the presence of organic additives

2003 ◽  
Vol 68 (4-5) ◽  
pp. 349-361 ◽  
Author(s):  
Ibro Tabakovic ◽  
Steve Riemer
Keyword(s):  
Dynamic Scaling ◽  
Scaling Analysis ◽  
Lauryl Sulfate ◽  
Organic Additives ◽  
Plating Bath ◽  
Force Microscopy ◽  
Kinetic Roughening ◽  
Polar Species ◽  
Atomic Force ◽  
Hydrogen Bubbles

The effects of three additives, sodium lauryl sulfate (NaLS), saccharin (Sacc), and NaLS + Sacc, on roughness development during the electrodeposition of CoNiFe films were investigated. The characterization of these films by atomic force microscopy shows that the electrodeposits produced from NaLS containing solution result in a rough surface. The role of NaLS surfactant is to change the interfacial tension and clean non-polar species like hydrogen bubbles from the surface. In Sacc containing solution the evolution of a smooth surface is controlled by adsorbed Sacc molecule at the interface. The kinetic roughening of these deposits was investigated by dynamic scaling analysis. It was demonstrated that the roughness of CoNiFe films, obtained in the presence of NaLS + Sacc additives, was also dependent on current density, roughness of substrate, and the temperature of plating bath.

Statistics of nano-objects characteristics on the surface of PbTe:Bi condensate deposited on ceramic

2017 ◽  
Vol 31 (03) ◽  
pp. 1750023 ◽  
Author(s):  
Yaroslav Saliy ◽  
Mark Ruvinskiy ◽  
Lyubomyr Nykyruy
Keyword(s):  
Image Processing ◽  
Atomic Force Microscopy ◽  
Crystallite Size ◽  
Force Microscopy ◽  
Technological Factors ◽  
Image Processing Techniques ◽  
Atomic Force ◽  
Statistical Hypotheses ◽  
Processing Techniques

The influence of technological factors for obtaining such as both time and temperature of evaporator and temperature of substrate on statistics of the objects on the surface of PbTe films doped by Bi and deposited from the vapor on ceramics substrate in vacuum has been investigated. The atomic force microscopy, the image processing techniques and testing of the statistical hypotheses were used. The influence of technological factors on statistics of the surface crystallite size and their correlation to each other was analyzed.

scholarly journals Using Atomic Force Microscopy to Measure Thickness of Passive Film on Stainless Steel Immersed in Aqueous Solution

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Rongguang Wang ◽  
Yunhui Li ◽  
Tian Xiao ◽  
Li Cong ◽  
Yunhan Ling ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Atomic Force Microscopy ◽  
Stainless Steel ◽  
Film Thickness ◽  
Passive Film ◽  
Sample Surface ◽  
Open Circuit ◽  
Chloride Ions ◽  
Force Microscopy ◽  
Atomic Force

Abstract Employing atomic force microscopy (AFM) to measure passive film thickness on stainless steel (SS) in aqueous solution is proposed. SUS304 austenite and SUS329J4L duplex SS samples partly covered by gold were set in a minicell. To remove the original film, the SS surface but gold was etched using dilute sulfuric acid. After cleaning, open circuit potential (OCP), and distance from the sample surface to the top of the gold were measured. They were then immersed in either 1.0% NaCl; 5.0% NaCl; or aqueous solution with pH ranging from 1.0 to 10.0 and measured again. Differences between the first and subsequent measures of OCP suggested a passive film had formed in solution with pH ranging from 2.8 to 10.0. Similarly, differences among AFM measures revealed the observed film thickness increased with increase in pH and with decrease in chloride ions. Also, film thickness in water was greater than that in a vacuum. Comparison of AFM measurements of passive film on the austenite and sigma phases in sensitized SUS329J4L duplex SS revealed the film was thinner on the sigma phase containing more chromium. Taken together, these findings suggest the proposed method is applicable for measuring the thickness of passive films in aqueous solution.

Platinum-Incorporating Graphene Counter Electrode for In2O3-Based DSSC with Various Annealing Temperatures

2014 ◽  
Vol 911 ◽  
pp. 266-270 ◽  
Author(s):  
Huda Abdullah ◽  
Savisha Mahalingam ◽  
Azimah Omar ◽  
Mohd Zikri Razali ◽  
Sahbudin Shaari ◽  
...  
Keyword(s):  
Counter Electrode ◽  
Sol Gel ◽  
Photovoltaic Performance ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Force Microscopy ◽  
Annealing Temperatures ◽  
Atomic Force ◽  
Afm Analysis ◽  
And Performance

Development of platinum incorporating graphene (pt/graphene) thin films was prepared by sol-gel method via chemical bath deposition (CBD). Indium oxide (In2O3) as photoanode and pt/graphene as counter electrode is used to analyse the characteristics and performance of dye-sensitized solar cell (DSSC). Different annealing temperatures of 200 oC, 250 oC and 300 oC were proposed for the counter electrode in this study. The changes in the structural properties were analyzed by means of X-ray Diffraction (XRD) and atomic force microscopy (AFM) analysis. AFM results indicated very rough surface area of graphene sheet where roughness values decreased linearly from 0.65 μm to 0.18 μm by an increment in annealing temperature. The In2O3-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (Jsc), open circuit voltage (Voc) and fill factor (FF) of 0.47 %, 5.46 mA cm-2, 0.54 V and 0.36 respectively. The obtained structural and photovoltaic performance analysis was proposed as a suitable benchmark for pt/graphene counter electrode with In2O3-based DSSC.

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