scholarly journals Thermal memory effects to photothermal pulse response

2007 ◽  
Vol 61 (2) ◽  
pp. 66-70 ◽  
Author(s):  
Marica Popovic ◽  
Zoran Stojanovic ◽  
Slobodanka Galovic
Keyword(s):  
Surface Temperature ◽  
Analytical Model ◽  
Classical Model ◽  
Laser Pulses ◽  
Pulse Response ◽  
Memory Effects ◽  
Temperature Variations ◽  
Thermal Memory

An analytical model that describes surface temperature variations of media with thermal memory stimulated by laser pulses was developed. The influence of thermal memory for semi infinite sample was analyzed by comparing our results with classical model results which neglect the thermal memory of materials for different pulse widths and for different pulse shapes. It was shown that this influence was outstanding around steep changes of the incentive flux and for short incident pulses.

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

scholarly journals Micro/Nano Amorphization/Oxidation Of Silicon Induced By High Repetition Femtosecond Laser Pulses

2021 ◽  
Author(s):  
Amirkianoosh Kiani
Keyword(s):  
Solar Cell ◽  
Femtosecond Laser ◽  
Surface Temperature ◽  
Pulse Duration ◽  
Analytical Model ◽  
Repetition Rate ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Laser Parameters

The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication. Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses. The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization. The main aim of this thesis is to develop a new method for direct micro/nano amorphization/oxidation of silicon using femtosecond laser irradiation and its applications in maskless lithography and solar cell fabrication.Amorphization and oxidation occur when crystalline silicon is exposed to the irradiation of femtosecond laser pulses below the ablation threshold. Mechanisms of morphization and oxidation were discussed and the surface temperature model was developed to study the relation between laser parameters and observed amorphization and oxidation. A systematic theoretical and experimental study of the influence of the laser parameters on the quality of amorphorized area and the size of the feature fabricated through amorphization has been studied. It was found that during the process of silicon amorphization and oxidation, the higher repetition rate of laser pulses yields smooth morphology with better repeatability. Increasing pulse duration and number of pulses were seen to increase the line width. However, increasing the number of pulses does not result in ablation of the target area. An analytical model was developed for the calculation of the average surface temperature after n-pulses.The effect of the laser pulse width was investigated by developing an analytical model for the calculation of the non-dimensional surface temperature with various pulse widths. It was found from experimental and analytical results that for a constant power and repetition rate, an increase in the pulse duration corresponds to a significant increase in the surface temperature. It results in an increase in the amount of modified material as well as improvement of light absorption in the case of amorphization.The amorphous silicon and silicon oxide can act as an etch stop. Therefore, maskless lithography iis possible with the direct patterning (amorphization and oxidation) of crystalline silicon. Experimental results have proved the feasibility of the proposed concepts. The thin-film of amorphous silicon generated on the silicon substrate has a potential for use in photovoltaic devices and solar cell fabrication. In comparison with previous methods, the direct oxidation/amorphization of silicon induced by the femtosecond laser is a maskless single-step technique which offers a higher flexibility and reduced processing time.

Optically induced temperature variations in a two-layer volume absorber including thermal memory effects

2021 ◽  
Vol 129 (1) ◽  
pp. 015104
Author(s):  
M. N. Popovic ◽  
D. D. Markushev ◽  
M. V. Nesic ◽  
M. I. Jordovic-Pavlovic ◽  
S. P. Galovic
Keyword(s):  
Memory Effects ◽  
Temperature Variations ◽  
Thermal Memory ◽  
Optically Induced

Holocene sea surface temperature variations recorded in corals from Kikai Island, Japan

2017 ◽  
Vol 51 (4) ◽  
pp. e9-e14 ◽  
Author(s):  
Hiroto Kajita ◽  
Atsuko Yamazaki ◽  
Takaaki Watanabe ◽  
Chung-Che Wu ◽  
Chuan-Chou Shen ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Sea Surface Temperature ◽  
Sea Surface ◽  
Temperature Variations

scholarly journals Analytical model for the depth progress of percussion drilling with ultrashort laser pulses

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Daniel Holder ◽  
Rudolf Weber ◽  
Thomas Graf ◽  
Volkher Onuseit ◽  
David Brinkmeier ◽  
...  
Keyword(s):  
Analytical Model ◽  
Experimental Validation ◽  
Laser Pulses ◽  
Ultrashort Laser Pulses ◽  
Picosecond Pulses ◽  
Hole Depth ◽  
Laser Percussion Drilling ◽  
Pulse Energies ◽  
Ultrashort Laser ◽  
Percussion Drilling

AbstractA simplified analytical model is presented that predicts the depth progress during and the final hole depth obtained by laser percussion drilling in metals with ultrashort laser pulses. The model is based on the assumption that drilled microholes exhibit a conical shape and that the absorbed fluence linearly increases with the depth of the hole. The depth progress is calculated recursively based on the depth changes induced by the successive pulses. The experimental validation confirms the model and its assumptions for percussion drilling in stainless steel with picosecond pulses and different pulse energies.

Neutron Activation Measurements of As and Ga Loss During Transient Annealing of Gaas

1982 ◽  
Vol 13 ◽  
Author(s):  
A. Rose ◽  
J.T.A. Pollock ◽  
M.D. Scott ◽  
F.M. Adams ◽  
J.S. Williams ◽  
...  
Keyword(s):  
Neutron Activation Analysis ◽  
Activation Analysis ◽  
Neutron Activation ◽  
Surface Temperature ◽  
Laser Power ◽  
Ruby Laser ◽  
Laser Pulses ◽  
Vitreous Carbon ◽  
Incoherent Light ◽  
Transient Conditions

ABSTRACTSignificant dissociation is normally detected under non-optimised transient annealing of GaAs. We have utilised neutron activation to measure As and Ga loss from virgin and implanted material annealed under various transient conditions. Complementary RBS data are reported. In particular, surface dissociation has been measured as a function of pulsed ruby laser power and for several combinations of time and surface temperature using an incoherent light source and a vitreous carbon strip heater.The results indicate that neutron activation analysis offers a powerful tool to identify the conditions required to minimise GaAs dissociation during annealing. For examplq ruby laser pulses of energy 0.29–1.38 J cm−2 caused As loss of 4 – 90 × 10 cm−2.

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