scholarly journals Enhanced dielectric properties in la modified barium titanate ceramics

2019 ◽  
Vol 32 (2) ◽  
pp. 179-193 ◽  
Author(s):  
Vesna Paunovic ◽  
Zoran Prijic ◽  
Milos Djordjevic ◽  
Vojislav Mitic
Keyword(s):  
Grain Size ◽  
Phase Transformation ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Dissipation Factor ◽  
Dielectric Constants ◽  
Phase Transformation Temperature ◽  
Average Grain Size ◽  
La Doped

Donor/acceptor (La/Mn) doped BaTiO3 ceramics, sintered at different temperatures, were studied regarding their microstructure and dielectric properties as well as the dielectric response in a ferroelectric/paraelectric regime. The concentrations of La3+ as donor, ranging from 0.1 to 5.0 at% were used for doping, while a content of Mn4+ as acceptor was at 0.05 at% in all samples. The sintering temperature of codoped samples were 1290? and 1350?C. A reduction in grain size and fine-grained microstructure with average grain size from 0.5 to 2.0 mm was observed in low doped samples, whereas the abnormal growth of individual grains took place in the 2 at% and 5 at% La doped specimens. The dielectric properties of these samples were investigated as a function of frequency (100Hz - 20 kHz) and temperature (20-180?C). The measured results suggested that both the dielectric constants of the ceramics (er at room temperature and ermax at the Curie temperature) decreased as the concentration of La3+ increased. The dielectric permittivity was in the range of 944 to 3200. For samples doped with 0.1 at% La and sintered at 1350?C, the highest dielectric constant value at room temperature (er= 3200) and Curie temperature (er= 5000) were measured. For all measured samples the dissipation factor was less than 0.09. With an increase in La contents, dielectric measurements exhibited shift in the Curie temperature (Tc) towards the low temperature. Using the Curie-Weiss and the modified Curie-Weiss law, Curie's constant C was calculated as well as the parameterg, which describes the deviation from the linear dependence er of T above the phase transformation temperature. The calculated values for g ranged from 1.01 to 1.43. These values indicate a sharp phase transformation in lowdoped and diffuse phase transformation in highly La doped samples. The phase transition was reflected in the values of C that started to decrease with increasing dopant content.

Structural and dielectric properties of Bi2NbxVi−xO5.5 ceramics

1996 ◽  
Vol 11 (9) ◽  
pp. 2288-2292 ◽  
Author(s):  
K. B. R. Varma ◽  
K. V. R. Prasad
Keyword(s):  
Differential Scanning Calorimetry ◽  
Grain Size ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Scanning Calorimetry ◽  
Electron Microscopic ◽  
Scanning Electron Microscopic ◽  
Scanning Electron

Bi2Nbx V1−xO5.5 ceramics with x ranging from 0.01 to 0.5 have been prepared. The crystal system transforms from an orthorhombic to tetragonal at x 3= 0.1 and it persists until x = 0.5. Scanning electron microscopic (SEM) investigations carried out on thermally etched Bi2NbxV1−xO5.5 ceramics confirm that the grain size decreases markedly (18 μm to 4 μm) with increasing x. The shift in the Curie temperature (725 K) toward lower temperatures, with increasing x, is established by Differential Scanning Calorimetry (DSC). The dielectric constants as well as the loss tangent (tan δ) decrease with increasing x at room temperature.

scholarly journals Dielectric properties of La/Mn codoped barium titanate ceramics

2016 ◽  
Vol 29 (2) ◽  
pp. 285-296 ◽  
Author(s):  
Vesna Paunovic ◽  
Vojislav Mitic ◽  
Milos Marjanovic ◽  
Ljubisa Kocic
Keyword(s):  
Dielectric Properties ◽  
Pechini Method ◽  
Local Area ◽  
Dissipation Factor ◽  
Curie Constant ◽  
Weiss Temperature ◽  
Fine Grained ◽  
Average Grain Size ◽  
Titanate Ceramics ◽  
La Doped

La/Mn codoped BaTiO3 ceramics with various La2O3 content, ranging from 0.3 to 1.0 at% La, were investigated regarding their microstructure and dielectric properties. The content of MnO2 was kept constant at 0.01 at% Mn in all samples. La/Mn codoped and undoped BaTiO3 were obtained by a modified Pechini method and sintered in air at 13000C for two hours. The homogeneous and completely fine-grained microstructure with average grain size from 0.5 to 1.5mm was observed in samples doped with 0.3 at% La. In high doped samples, apart from the fine grained matrix, the appearance of local area with secondary abnormal grains was observed. The dielectric properties were investigated as a function of frequency and temperature. The dielectric permittivity of the doped BaTiO3 was in the range of 3945 to 12846 and decreased with an increase of the additive content. The highest value for the dielectric constant at room temperature (er= 12846) and at the Curie temperature (er= 17738) were measured for the 0.3 at% La doped samples. The dissipation factor ranged from 0.07 to 0.62. The Curie constant (C), Curie-Weiss temperature (T0) and critical exponent (g) were calculated using the Curie-Weiss and the modified Curie-Weiss law. The highest values of Curie constant (C=3.27?105 K) was measured in the 1.0 at% La doped samples. The obtained values for g ranged from 1.04 to 1.5, which pointed out the sharp phase transformation from the ferroelectric to the paraelectric phase.

scholarly journals The effects of additive on microstructure and electrical properties of batio3 ceramics

2004 ◽  
Vol 1 (3) ◽  
pp. 89-98 ◽  
Author(s):  
Vesna Paunovic ◽  
Ljiljana Zivkovic ◽  
Ljubomir Vracar ◽  
Vojislav Mitic ◽  
Miroslav Miljkovic
Keyword(s):  
Dielectric Constant ◽  
Curie Temperature ◽  
Room Temperature ◽  
Low Frequency ◽  
Dissipation Factor ◽  
The Other ◽  
Uniform Microstructure ◽  
Average Grain Size ◽  
Solid State Sintering ◽  
Curie Temperatures

In this paper comparative investigations of microstructure and dielectric properties of BaTiO3 ceramics doped with 1.0 wt% of Nb2O5, MnCO3 and CaZrO3 have been done. BaTiO3 samples were prepared using conventional method of solid state sintering at 13000C for two hours. Two distinguish micro structural regions can be observed in sample doped with Nb2O5. The first one, with a very small grained microstructure and the other one, with a rod like grains. In MnCO3 and CaZrO3 doped ceramics the uniform microstructure is formed with average grain size about 0.5- 2?m and 3-5?m respectively. The highest value of dielectric permittivity at room temperature and the greatest change of permittivity in function of temperature were observed in MnCO3/BaTiO3. In all investigated samples dielectric constant after initially large value at low frequency attains a constant value at f = 6kHz. A dissipation factor is independent of frequency greater than 10 kHz and, depending of systems, lies in the range from 0.035 to 0.25. At temperatures above Curie temperatures, the permittivity of all investigated samples follows a Curie- Weiss law. A slight shift of Curie temperature to the lower temperatures, in respect of Curie temperature for undoped BaTiO3, was observed in all investigated samples.

Dielectric Properties and Microstructure of BaTiO3 Ceramics

2002 ◽  
Vol 718 ◽  
Author(s):  
Dae-Chul Park ◽  
Jun-ichi Itoh ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
Toyohiko Yano ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Curie Temperature ◽  
Secondary Phase ◽  
Dielectric Constants ◽  
Core Shell ◽  
Temperature Range ◽  
The Core ◽  
La Doped ◽  
Mg Doped

AbstractDielectric properties and microstructure were investigated in BaTiO3 ceramics with various additives, Ho2O3, MgO, Ho2O3/MgO, and La2O3. The dielectric constants were increased up to ∼4000 and ∼3000 at 25°C in the 1 mol% Ho-doped and 0.5 mol% Mg-doped BaTiO3 materials, respectively. The BaTiO3 material codoped with 3 mol% Ho + 1.5 mol% Mg led to increase dielectric constant up to ∼6000 at 25°C and the dielectric constant peak around Curie temperature was suppressed at temperature range of from 25°C to 125°C. The size of BaTiO3 grains depended on the content and kind of an additive. Core-shell grains and secondary phase were also dependent on an additive. Core-shell grains were formed completely in Ho-doped BaTiO3 except for 0.5 mol%, but the structure was little observed in Mg- and La-doped BaTiO3 material. Codoped BaTiO3 also formed the core-shell grains.

scholarly journals Comparison between dielectric and pyroelectric properties of PZFNT and BST type ceramics

2019 ◽  
Vol 13 (3) ◽  
pp. 269-276
Author(s):  
Viorica Stancu ◽  
Luminita Amarande ◽  
Mihaela Botea ◽  
Alin Iuga ◽  
Lucia Leonat ◽  
...  
Keyword(s):  
Grain Size ◽  
Laser Pulse ◽  
Pulse Energy ◽  
Room Temperature ◽  
Laser Pulse Energy ◽  
Dielectric Constants ◽  
Ceramic Technology ◽  
Pyroelectric Properties ◽  
Average Grain Size ◽  
Pyroelectric Detectors

Ba0.75Sr0.25TiO3 (BST) and PbZr0.68Fe0.14Nb0.14Ti0.04O3 (PZFNT) ceramic pellets were obtained by ceramic technology and their structural, ferroelectric and pyroelectric properties were investigated. The relative density of BST and PZFNT is about 93% and 90%, respectively, with an average grain size of 102 ?m and 6.45 ?m. Both materials have similar room temperature dielectric constants (~2000), but PZFNT shows higher remnant polarization (~15?C/cm2) and better pyroelectric properties (~1.69?10?4 C/m2K), which recommend it for pyroelectric detectors, infrared radiation- and laser pulse energy-meters.

scholarly journals Experimental and Numerical Investigation of the ECAP Processed Copper: Microstructural Evolution, Crystallographic Texture and Hardness Homogeneity

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 607
Author(s):  
A. I. Alateyah ◽  
Mohamed M. Z. Ahmed ◽  
Yasser Zedan ◽  
H. Abd El-Hafez ◽  
Majed O. Alawad ◽  
...  
Keyword(s):  
Grain Size ◽  
Equal Channel Angular Pressing ◽  
Cross Section ◽  
Room Temperature ◽  
Pure Copper ◽  
High Density ◽  
Ecap Processing ◽  
Heterogeneous Distribution ◽  
Angular Pressing ◽  
Average Grain Size

The current study presents a detailed investigation for the equal channel angular pressing of pure copper through two regimes. The first was equal channel angular pressing (ECAP) processing at room temperature and the second was ECAP processing at 200 °C for up to 4-passes of route Bc. The grain structure and texture was investigated using electron back scattering diffraction (EBSD) across the whole sample cross-section and also the hardness and the tensile properties. The microstructure obtained after 1-pass at room temperature revealed finer equiaxed grains of about 3.89 µm down to submicrons with a high density of twin compared to the starting material. Additionally, a notable increase in the low angle grain boundaries (LAGBs) density was observed. This microstructure was found to be homogenous through the sample cross section. Further straining up to 2-passes showed a significant reduction of the average grain size to 2.97 µm with observable heterogeneous distribution of grains size. On the other hand, increasing the strain up to 4-passes enhanced the homogeneity of grain size distribution. The texture after 4-passes resembled the simple shear texture with about 7 times random. Conducting the ECAP processing at 200 °C resulted in a severely deformed microstructure with the highest fraction of submicron grains and high density of substructures was also observed. ECAP processing through 4-passes at room temperature experienced a significant increase in both hardness and tensile strength up to 180% and 124%, respectively.

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

Effect of Sintering Temperature on Structure and Dielectric Properties of Lead Free K0.5Na0.5NbO3 Prepared via Hot Isostatic Pressing

2017 ◽  
Vol 888 ◽  
pp. 42-46 ◽  
Author(s):  
Fatin Khairah Bahanurdin ◽  
Julie Juliewatty Mohamed ◽  
Zainal Arifin Ahmad
Keyword(s):  
Grain Size ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Hot Isostatic Pressing ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Tangent Loss ◽  
Isostatic Pressing ◽  
Tan Δ

In this research, alkaline niobate known as K0.5Na0.5NbO3 (KNN) lead-free piezoelectric ceramic was synthesis by solid state reaction method which pressing at different sintering temperatures (1000 °C and 1080 °C) prepared via hot isostatic pressing (HIP)). The effect of sintering temperature on structure and dielectric properties was studied. The optimum sintering temperature (at 1080 °C for 30 minutes) using hot isostatic pressing (HIP) was successfully increase the density, enlarge the particle grain size in the range of 0.3 µm – 2.5 µm and improves the dielectric properties of K0.5Na0.5NbO3 ceramics. The larger grain size and higher density ceramics body will contribute the good dielectric properties. At room temperature, the excellent relative permittivity and tangent loss recorded at 1 MHz (ɛr = 5517.35 and tan δ = 0.954), respectively for KNN1080HIP sample. The KNN1080HIP sample is also exhibits highest relative density which is 4.485 g/cm3. The ɛr depends upon density and in this work, the density increase as the sintering temperature increase, which resulting the corresponding ɛr value also increases.

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

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