scholarly journals R-Tree for phase change memory

2017 ◽  
Vol 14 (2) ◽  
pp. 347-367 ◽  
Author(s):  
Elkhan Jabarov ◽  
Byung-Won On ◽  
Gyu Choi ◽  
Myong-Soon Park
Keyword(s):  
Phase Change ◽  
Spatial Data ◽  
Processing Time ◽  
Fill Factor ◽  
Phase Change Memory ◽  
Experimental Results ◽  
Location Information ◽  
Node Size ◽  
Blank Node ◽  
Change Memory

Nowadays, many applications use spatial data for instance-location information, so storing spatial data is important.We suggest using R -Tree over PCM. Our objective is to design a PCM-sensitive R -Tree that can store spatial data as well as improve the endurance problem. Initially, we examine how R -Tree causes endurance problems in PCM, and we then optimize it for PCM. We propose doubling the leaf node size, writing a split node to a blank node, updating parent nodes only once and not merging the nodes after deletion when the minimum fill factor requirement does not meet. Based on our experimental results while using benchmark dataset, the number of write operations to PCM in average decreased by 56 times by using the proposed R -Tree. Moreover, the proposed R -Tree scheme improves the performance in terms of processing time in average 23% compared to R -Tree.

Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming

2011 ◽  
Vol 497 ◽  
pp. 111-115
Author(s):  
Ryota Kobayashi ◽  
Tomoyuki Noguchi ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Experimental Results ◽  
Device Resistance ◽  
Multilevel Storage ◽  
Simulation Results ◽  
Change Memory

We have investigated random-access multilevel storage in phase change memory by staircase-like pulse programming. Staircase-like pulse consists of first sub-pulse and second sub-pulse. Our simulation exhibited that any resistance levels are expected to be randomly accessed by controlling the crystallization with different widths of second sub-pulset2. Based on the simulation results, we did experiment on staircase-like pulse programming. Experimental results showed that the device resistance gradually increased with reducing second sub-pulset2to 0 ns. In other words, random access to any resistance levels was demonstrated to be possible simply by changingt2.

Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory

2010 ◽  
Vol 459 ◽  
pp. 140-144 ◽  
Author(s):  
You Yin ◽  
Tomoyuki Noguchi ◽  
Hiroki Ohno ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
High Reliability ◽  
Phase Change Memory ◽  
High Ratio ◽  
Experimental Results ◽  
Resistance Level ◽  
Multi Level ◽  
Critical Characteristics ◽  
Improve Reliability ◽  
Change Memory

Reliability (or stability) of multi-level storage (MLS) is the critical characteristics for multi-level cells. In order to improve reliability of MLS of phase-change memory, there are two effective approaches, (i) enlargement of the ratio between resistance levels and (ii) reduction of scattering of resistance level. On the basis of our experimental results, it is demonstrated that the Ge2Sb2Te5-based double-layered cell has a high ratio of highest to lowest levels up to two-to-three orders of magnitude, implying high reliability. The cells exhibit the possibility of stable switching for four-level storage.

Low Power Phase Change Memory via Block Copolymer Self-assembly Technology

2013 ◽  
Vol 1556 ◽  
Author(s):  
Beom Ho Mun ◽  
Woon Ik Park ◽  
You Yin ◽  
Byoung Kuk You ◽  
Jae Jin Yun ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Low Power ◽  
Phase Change ◽  
Self Assembly ◽  
Fill Factor ◽  
Phase Change Memory ◽  
Heat Efficiency ◽  
Assembly Technology ◽  
Self Assembled ◽  
Change Memory

ABSTRACTWe report the demonstration of low power phase change memory (PCM) by forming thin self-assembled SiOx nanostructures between Ge2Sb2Te5 (GST) and a TiN heater layer utilizing a block copolymer (BCP) self-assembly technology. The reset current was decreased about three-fold as fill factor, which is the occupying area fraction of self-assembled SiOx nanostructures on a TiN heater layer, increased to 75.3%. The electro-thermal simulation shows the better heat efficiency due to the nano-patterned insulating oxide.

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Charge Density ◽  
Chemical Bonding ◽  
Local Structure ◽  
Phase Change Memory ◽  
Change Memory

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

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