scholarly journals Electrical and Functional Characterisation with Single Chips and Module Prototypes of the 1.2 Gb/s Serial Data Link of the Monolithic Active Pixel Sensor for the Upgrade of the ALICE Inner Tracking System.

2018 ◽  
Author(s):  
Matthias Bonora ◽  
Matteo Lupi ◽  
Gianluca Aglieri Rinella ◽  
Hartmut Hillemanns ◽  
Daehyeok Kim ◽  
...  
Keyword(s):  
Tracking System ◽  
Data Link ◽  
Active Pixel Sensor ◽  
Inner Tracking System ◽  
Functional Characterisation ◽  
Active Pixel ◽  
Serial Data

scholarly journals Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

2016 ◽  
Vol 11 (02) ◽  
pp. C02042-C02042 ◽  
Author(s):  
D. Kim ◽  
G. Aglieri Rinella ◽  
C. Cavicchioli ◽  
N. Chanlek ◽  
A. Collu ◽  
...  
Keyword(s):  
Tracking System ◽  
Active Pixel Sensor ◽  
Inner Tracking System ◽  
Front End ◽  
Active Pixel

scholarly journals Monolithic active pixel sensor development for the upgrade of the ALICE inner tracking system

2013 ◽  
Vol 8 (12) ◽  
pp. C12041-C12041 ◽  
Author(s):  
G Aglieri ◽  
C Cavicchioli ◽  
P L Chalmet ◽  
N Chanlek ◽  
A Collu ◽  
...  
Keyword(s):  
Tracking System ◽  
Active Pixel Sensor ◽  
Sensor Development ◽  
Inner Tracking System ◽  
Active Pixel

scholarly journals Characterization of Highly Irradiated ALPIDE Silicon Sensors

Universe ◽  
2019 ◽  
Vol 5 (4) ◽  
pp. 91
Author(s):  
Valentina Raskina ◽  
Filip Křížek
Keyword(s):  
Nuclear Physics ◽  
Detection Efficiency ◽  
Tracking System ◽  
Physics Institute ◽  
Total Ionization ◽  
Silicon Sensors ◽  
Active Pixel ◽  
Academy Of Sciences

The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in Řež. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 × 10 13 1 MeV n eq · cm - 2 , ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.

A Novel One-transistor Active Pixel Sensor with Tunable Sensitivity

2021 ◽  
pp. 1-1
Author(s):  
J. Liu ◽  
Yong-Feng Cao ◽  
Xue-Jiao Wang ◽  
Yu-Long Jiang ◽  
J. Wan
Keyword(s):  
Active Pixel Sensor ◽  
Active Pixel

High-Voltage CMOS Active Pixel Sensor

2021 ◽  
pp. 1-1
Author(s):  
Ivan Peric ◽  
Attilio Andreazza ◽  
Heiko Augustin ◽  
Marlon Barbero ◽  
Mathieu Benoit ◽  
...  
Keyword(s):  
High Voltage ◽  
Active Pixel Sensor ◽  
Active Pixel

scholarly journals A rad-hard CMOS active pixel sensor for electron microscopy

2009 ◽  
Vol 598 (2) ◽  
pp. 642-649 ◽  
Author(s):  
Marco Battaglia ◽  
Devis Contarato ◽  
Peter Denes ◽  
Dionisio Doering ◽  
Piero Giubilato ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Active Pixel Sensor ◽  
Active Pixel
Sign in / Sign up

Export Citation Format

Share Document