A Study on the Dual-Channel Driving Factors for Customer Participation Behaviors: Focusing on Mobile SNS WeChat

2021 ◽  
Vol 8 (1) ◽  
pp. 59-80
Author(s):  
Hong Jin ◽  
Min Ji Kim ◽  
Jia Li Zhu
Keyword(s):  
Driving Factors ◽  
Customer Participation ◽  
Dual Channel ◽  
Mobile Sns

Research on the Driving Factors of Customer Participation in Service Innovation in a Virtual Brand Community

2015 ◽  
Vol 7 (4) ◽  
pp. 299-309 ◽  
Author(s):  
Li Zhihong ◽  
Colin Duffield ◽  
David Wilson
Keyword(s):  
Knowledge Sharing ◽  
Perceived Risk ◽  
Service Sector ◽  
Virtual Communities ◽  
Positive Impact ◽  
Service Innovation ◽  
Driving Factors ◽  
Customer Participation ◽  
Brand Communities ◽  
Effective Strategies

With the development of the service sector and network communication technology, customers are involved in business activities through virtual communities and demonstrating the ability to create personalized products or services with companies. This paper systematically studied the driving factors of customer participation in service innovation. Based on related literature research achievements and a better development of virtual brand communities in China-XiaoMi community, this paper empirically analyzed the different factors. The results showed that self-efficacy and trust have a significant positive impact on knowledge sharing and co-production, while the perceived risk and helpfulness have a significant positive impact on knowledge sharing. Finally, effective strategies and recommendations are proposed on how companies encourage and manage customers to effectively participate in service innovation of virtual brand communities based on the conclusions of analysis.

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Value Creation of Korail through Customer Participation

2013 ◽  
Vol 14 (4) ◽  
pp. 179-194
Author(s):  
서주환 ◽  
Oh, Ha Na ◽  
Kim Youngtaek ◽  
Seo, Min Ju
Keyword(s):  
Value Creation ◽  
Customer Participation
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