scholarly journals Fabrication Process for Low-Tc Superconductor Electronics Devices and Its Future Prospects

2017 ◽  
Vol 52 (5) ◽  
pp. 315-322
Author(s):  
Mutsuo HIDAKA ◽  
Shuichi NAGASAWA
Keyword(s):  
Fabrication Process ◽  
Future Prospects ◽  
Superconductor Electronics

scholarly journals Superconductor Electronics Fabrication Process with MoNx Kinetic Inductors and Self-Shunted Josephson Junctions

2018 ◽  
Vol 28 (4) ◽  
pp. 1-12 ◽  
Author(s):  
Sergey K. Tolpygo ◽  
Vladimir Bolkhovsky ◽  
Daniel E. Oates ◽  
Ravi Rastogi ◽  
Scott Zarr ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Fabrication Process ◽  
Superconductor Electronics

scholarly journals Inductance of Circuit Structures for MIT LL Superconductor Electronics Fabrication Process With 8 Niobium Layers

2015 ◽  
Vol 25 (3) ◽  
pp. 1-5 ◽  
Author(s):  
Sergey K. Tolpygo ◽  
Vladimir Bolkhovsky ◽  
T. J. Weir ◽  
C. J. Galbraith ◽  
Leonard M. Johnson ◽  
...  
Keyword(s):  
Fabrication Process ◽  
Superconductor Electronics

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

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