scholarly journals LNA Prototype at 54 MHz to 88 MHz Using Discrete Components

2020 ◽  
Vol 4 (1) ◽  
pp. 32
Author(s):  
Prapto Nugroho ◽  
Ivan Muhammad Ihsan Izetbegovic ◽  
Wahyu Dewanto
Keyword(s):  
Power Consumption ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Area Network ◽  
Third Order ◽  
Regional Area ◽  
Technical Specifications ◽  
Noise Amplifier ◽  
Intercept Point

This paper presents a design and prototyping of a Low-Noise Amplifier (LNA) for Wireless Regional Area Network (WRAN) operating in TV broadcast bands between 54 MHz – 88 MHz. The LNA design was then implemented by using discrete components. Components values was obtained by utilized DC analysis according to specifications which follows the Institute of Electrical and Electronics Engineering (IEEE) 802.22 standard on WRAN technical specifications. Simulation with 88 MHz produced S11 = -5.72 dB, S12 = -41.57 dB, S21 = 15.07 dB, S22 = -4.76 dB, Noise Figure (NF) = 3.9 dB, Input Third Order Intercept Point (IIP3) = 2.21 dBm, and power consumption of 45.39 mW. Experiments results on 88 MHz showed S11 = -6.13 dB and S21 = 0.74 dB.

scholarly journals Design of the Low Noise Amplifier Circuit in Band L for Improve the Gain and Circuit Stability

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Arash Omidi ◽  
Rohalah Karami ◽  
Parisa Sadat Emadi ◽  
Hamed Moradi
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
System Stability ◽  
Third Order ◽  
Cmos Transistor ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
The Cost ◽  
Intercept Point

In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain - Increase circuit linearization - Create an integrative matching network for system stability. The application of this circuit can be used in wireless and GPS systems. The CMOS LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. This circuit is designed using ADS software.

The Special Research on a Low Noise Amplifier

2012 ◽  
Vol 605-607 ◽  
pp. 2057-2061
Author(s):  
Xin Yin ◽  
Yi Yao ◽  
Jin Ling Jia
Keyword(s):  
Wireless Local Area Network ◽  
Local Area Network ◽  
Noise Figure ◽  
Design Method ◽  
Local Area ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Area Network ◽  
Noise Amplifier

This paper studies a low noise amplifier design method for 5.8G wireless local area network. Using the software of designing RF circuit ADS(Advanced Design System) and Avago Technologies’s ATF-36077,we designed a three-cascade LNA. In 5.725G~5.85GHz range, noise figure less than 0.5dB, more than 30dB gain, input and output standing wave ratio less than 1.3dB.The LNA meet the design requirements.

Design of High Performance Low-Noise Amplifier Circuit Based on Complementary Metal Oxide Semiconductor Technology

2021 ◽  
Vol 16 (4) ◽  
pp. 559-564
Author(s):  
Chao Huang ◽  
Wan-Jun Yin
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Input Device ◽  
Output Stage ◽  
Noise Amplifier ◽  
5 Ghz

This paper designs a body-biased (BB) differential cascode low-noise amplifier (LNA) with current bias (CR) and capacitor cross-coupling (CCC) technology that meets the bandwidth requirements of 5 GHz wireless applications. In the design, the CCC technology in the differential cascode topology is used to effectively suppress the common mode noise, thereby improving the noise figure. The series resonant network eliminates parasitic capacitance at the input and output ends, thereby improving the power transmission efficiency. The CR technology formed by the intermediate capacitor shares the DC current input to the output device, thereby increasing the gain. This paper uses BB technology in the design to lower the threshold of the cascode device and improve the transconductance, which further improves the gain and reduces the power consumption. The CCC technology used in the paper improves linearity by eliminating the non-linear components present in the input device, which will not interfere with the transconductance of the output stage. This article has obtained excellent performance parameters including gain, noise figure (NF) and linearity without affecting the power consumption, integration and cost of the proposed design.

scholarly journals Design of Low Noise Amplifier for 1.5 GHz

SCITECH Nepal ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 40-47
Author(s):  
Bijaya Shrestha
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Rf Receiver ◽  
Current Consumption ◽  
Additional Noise ◽  
Noise Amplifier ◽  
Rf Signal ◽  
Intercept Point

Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.

scholarly journals Adaptive low-power CMOS LNA in internet of things based wireless sensor networks

2020 ◽  
Vol 9 (3) ◽  
pp. 616
Author(s):  
Abdelhamid Helali ◽  
Feten Ouni ◽  
Mohsen Nasri ◽  
Hassen Maaref
Keyword(s):  
Internet Of Things ◽  
Power Consumption ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Sensor Nodes ◽  
Wireless Sensor ◽  
Rf Receiver ◽  
Noise Amplifier ◽  
Battery Energy

With the increasing need for the Internet of things (IoT), wireless communication has become a popular technology for the network. This explosion of IoT wireless applications makes the power consumption a key metric in the design of wireless sensor nodes. The major constraint of the wireless sensors nodes is battery energy, which is the mainly challenging problem in designing IoT network. these constraints have imposed new yet stringent specs to the design of RF front-ends. The design of adaptive radio-frequency circuits, in order to reduce power consumption, is of interest. In a RF receiver chain, the Low Noise Amplifier (LNA) stand as critical elements on the power consumption.To address this purpose, this paper proposes a design strategy for an adaptive Low Noise Amplifier as the first element of the receiver chain. Hence the proposed LNA achieves the correct QoS for various scenario of communications. Using the proposed LNA, a significant trade-off between a conversion gain, noise figure and energy consumption is presented.  

scholarly journals Broadband GaAs pHemt LNA design for T/R module application

2016 ◽  
Vol 54 (5) ◽  
pp. 584
Author(s):  
Phong Dai Le ◽  
Vu Duy Thong ◽  
Pham Le Binh
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Wide Bandwidth ◽  
Fully Integrated ◽  
Three Stages ◽  
Noise Amplifier

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

scholarly journals The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology

2020 ◽  
Vol 2020 ◽  
pp. 1-12
Author(s):  
Hemad Heidari Jobaneh
Keyword(s):  
Power Consumption ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Design System ◽  
Cmos Process ◽  
Ultralow Power ◽  
Noise Amplifier ◽  
5 Ghz

The calculation and design of an ultralow-power Low Noise Amplifier (LNA) are proposed in this paper. The LNA operates from 5 GHz to 10 GHz, and forward body biasing technique is used to bring down power consumption of the circuit. The design revolves around precise calculations related to input impedance, output impedance, and the gain of the circuit. MATLAB and Advanced Design System (ADS) are utilized to design and simulate the LNA. In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. Noise Figure (NF), input matching (S11), gain (S21), IIP3, and power dissipation are 1.46 dB–2.27 dB, −11.25 dB, 13.82 dB, −8.5, and 963 μW, respectively.

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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