scholarly journals EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS) ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

2010 ◽  
Vol 7 (1) ◽  
pp. 5-9 ◽  
Author(s):  
Suharso Suharso
Keyword(s):  
Growth Rate ◽  
Optical Microscopy ◽  
Dodecylbenzenesulfonic Acid ◽  
Microscopy Method

An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS) on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

scholarly journals In-situ SEM and optical microscopy testing for investigation of fatigue crack growth mechanism under overload

2018 ◽  
Vol 165 ◽  
pp. 13013
Author(s):  
Wei Zhang ◽  
Liang Cai
Keyword(s):  
Growth Rate ◽  
Crack Growth Rate ◽  
Optical Microscopy ◽  
Crack Growth ◽  
Load Condition ◽  
Crack Tip ◽  
Initial Crack ◽  
Crack Growth Behavior ◽  
Single Overload

In this paper, the in-situ scanning electron microscope (SEM) and optical microscopy experiments are performed to investigate the crack growth behavior under the single tensile overload. The objectives are to (i) examine the overload-induced crack growth micromechanisms, including the initial crack growth acceleration and the subsequent retardation period; (ii) investigate the effective region of single overload on crack growth rate. The specimen is a small thin Al2024-T3 plate with an edge-crack, which is loaded and observed in the SEM chamber. The very high resolution images of the crack tip are taken under the simple variable amplitude loading. Imaging analysis is performed to quantify the crack tip deformation at any time instant. Moreover, an identical specimen subjected to the same load condition is observed under optical microscope. In this testing, fine speckling is performed to promote the accuracy of digital imaging correlation (DIC). The images around the crack tip are taken at the peak loads before, during and after the single overload. After that, the evolution of local strain distribution is obtained through DIC technique. The results show that the rapid connection between the main crack and microcracks accounts for the initial crack growth acceleration. The crack closure level can be responsible for the crack growth rate during the steady growth period. Besides that, the size of retardation area is larger than the classical solution.

scholarly journals Growth of the (001) face of borax crystals

2010 ◽  
Vol 5 (2) ◽  
pp. 98-100
Author(s):  
Suharso Suharso
Keyword(s):  
Aqueous Solutions ◽  
Optical Microscopy ◽  
Growth Mechanism ◽  
Growth Rates ◽  
Spiral Growth ◽  
Microscopy Method

he growth rates of borax crystals from aqueous solutions in the (001) direction at various relative supersaturations were measured using in situ cell optical microscopy method. The result shows that the growth mechanism of the (001) face of borax crystal at temperature of 20 °C is spiral growth mechanism.   Keywords: Growth mechanism, borax.

The threshold energy for atom displacement in fcc metals

1990 ◽  
Vol 48 (4) ◽  
pp. 530-531
Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger
Keyword(s):  
Growth Rate ◽  
Elevated Temperatures ◽  
Threshold Energy ◽  
Dislocation Loops ◽  
Absolute Minimum ◽  
Voltage Electron ◽  
Atom Displacement ◽  
Electron Microscopes ◽  
Fcc Metal

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

scholarly journals Direct TEM observation of the “acanthite α-Ag2S–argentite β-Ag2S” phase transition in a silver sulfide nanoparticle

2019 ◽  
Vol 1 (4) ◽  
pp. 1581-1588 ◽  
Author(s):  
S. I. Sadovnikov ◽  
E. Yu. Gerasimov
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Silver Sulfide ◽  
Transmission Electron ◽  
Silver Sulfide Nanoparticles ◽  
Microscopy Method ◽  
Electron Microscopy Method ◽  
First Time

For the first time, the α-Ag2S (acanthite)–β-Ag2S (argentite) phase transition in a single silver sulfide nanoparticles has been observed in situ using a high-resolution transmission electron microscopy method in real time.

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

In situ growth rate measurements for plasma processing of opaque materials

2002 ◽  
Vol 418 (2) ◽  
pp. 151-155
Author(s):  
A Salifu ◽  
G Zhang ◽  
Edward A Evans
Keyword(s):  
Growth Rate ◽  
Plasma Processing ◽  
In Situ Growth
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