scholarly journals Fabrication of non-equilibrium Si: Te and Si: Zn Systems with extremely high impurity concentration by means of laser annealing.

1981 ◽  
Vol 9 (4) ◽  
pp. 434-438
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A.H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Impurity Concentration ◽  
Laser Annealing ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Non Equilibrium

Proximity Gettering of Slow Diffuser Contaminants

2013 ◽  
Vol 205-206 ◽  
pp. 271-277 ◽  
Author(s):  
Maria Luisa Polignano ◽  
Isabella Mica ◽  
Elena Cazzini ◽  
Monica Ceresoli ◽  
Davide Codegoni ◽  
...  
Keyword(s):  
Solid Solution ◽  
Impurity Concentration ◽  
Extended Defects ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Silicon Implantation ◽  
And Tungsten

In this paper, we test proximity gettering layers obtained by carbon or silicon implantation for their efficiency in molybdenum and tungsten gettering. DLTS was used to measure the impurity concentration in the solid solution and so to evaluate gettering efficiency. It was found that carbon implantation is effective in capturing these impurities, whereas silicon implantation is not. Extended defects seem not to play an important role in gettering these impurities. In addition, gettering was found to be most effective at high impurity concentration.

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

2011 ◽  
Vol 675-677 ◽  
pp. 109-112
Author(s):  
Shu Ang Shi ◽  
Wei Dong ◽  
Shi Hai Sun ◽  
Yi Tan ◽  
Guo Bin Li ◽  
...  
Keyword(s):  
Directional Solidification ◽  
Vertical Section ◽  
Growth Direction ◽  
Silicon Ingot ◽  
Metallurgical Silicon ◽  
High Impurity ◽  
Polarity Transition ◽  
High Impurity Concentration ◽  
Solid Liquid Interface ◽  
Solid Liquid

The distribution of resistivity, impurity and polarity in multicrystalline silicon ingot prepared by directional solidification method was detected. The effect of impurity distribution on resistivity was also researched. The results show that the shapes of equivalence line of resistivity in the cross section and vertical section of the silicon ingot depend on the solid-liquid interface. The resistivity in the vertical section increases with the increasing of solidified height at the beginning of solidification and reaches to maximum at the polarity transition point, then decreases rapidly with the increasing of solidified height and tends to zero on the top of the ingot because of the high impurity concentration. Study proves that the variation of resistivity in the vertical section is mainly relevant to the concentration distribution of the impurities such as Al, B and P in the growth direction.

Constituent Diffusion in a Deformable Thermoelastic Solid

1987 ◽  
Vol 54 (2) ◽  
pp. 441-446 ◽  
Author(s):  
S. P. Girrens ◽  
F. W. Smith
Keyword(s):  
Thermal Loading ◽  
Diffusion Theory ◽  
Parent Material ◽  
Β Phase ◽  
High Impurity ◽  
High Impurity Concentration ◽  
Thermoelastic Solid ◽  
Impurity Elements ◽  
Fully Coupled ◽  
Diffusion Problems

Solid mixtures containing initially uniform dilute concentrations of impurity elements may, upon the application of mechanical and thermal loading, develop regions of high impurity concentration that could result in local degradation of material properties. To address these degradation processes, a fully coupled thermomechanical-diffusion theory has been developed to describe the mass transport of mobile constituents driven by gradients in concentration, strain dilatation and temperature in a solid deformable parent material. A finite element code has been assembled to solve plane transient thermomechanical-diffusion problems. The theory presented and the resulting code have been successfully used to model internal hydrogen redistribution in β-phase Ti alloys induced by elastic strain gradients during bending.

A New Non-Equilibrium Molecular Dynamics Simulation Method for Rapid Solidification

1988 ◽  
Vol 100 ◽  
Author(s):  
Dhanraj K. Chokappa ◽  
Paulette Clancy
Keyword(s):  
Molecular Dynamics ◽  
Thermal Processing ◽  
Laser Annealing ◽  
Simulation Method ◽  
Dynamics Simulation ◽  
Kinetic Properties ◽  
Kinetic Information ◽  
Set Up ◽  
Non Equilibrium Molecular Dynamics ◽  
Non Equilibrium

ABSTRACTA new non-equilibrium Molecular Dynamics (NEMD) computer simulation method has been developed to study ultra-rapid melting and resolidification processes, e.g. laser annealing, ion implantation, etc. An atomic-level description of the material is combined with a new simulation technique to produce thermodynamic, structural and kinetic information as a function of time. Experimentally realistic values of the energy fluence, pulse duration and substrate temperature are used as input to the simulation. Rapid heat transfer simulating the action of the energy input is then set up allowing a complete prediction of the undercooling and associated kinetic properties. As such this new method offers the most realistic simulation model for rapid thermal processing to date.

Sign in / Sign up

Export Citation Format

Share Document