Ultra-Fast Interaction between Femtosecond Laser and Single-Crystalline Silicon

2006 ◽  
Vol 34 (11) ◽  
pp. 773-778 ◽  
Author(s):  
Yusaku IZAWA ◽  
Shigeki TOKITA ◽  
Masaki HASHIDA ◽  
Masayuki FUJITA ◽  
Yasukazu IZAWA
Keyword(s):  
Femtosecond Laser ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline

The Study of Collateral Damages in the Process of Femtosecond Laser Micromachining Single-Crystalline Silicon

2006 ◽  
Vol 532-533 ◽  
pp. 560-563
Author(s):  
Yan Shen Wang ◽  
Shen Dong ◽  
Yan Qiang Yang ◽  
Ying Chun Liang ◽  
Bo Wang ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
Sample Surface ◽  
Femtosecond Laser Pulses ◽  
Back Surface ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Femtosecond Laser Micromachining ◽  
Metamorphic Zone

Femtosecond laser pulses are irradiated on a single-side polished single-crystalline silicon wafer. Metamorphic zone appears around the ablated zone and the morphology changes gradually in the metamorphic zone. Typical phenomena of thermal ablation such as melt-resolidification and subtransparent glassy materials occur in the marginal area of the ablated zone. No apparent changes are found among microscopic morphologies of the ablated, metamorphic and unirradiated zones. There are flaws and spallations on the smooth back surface of the wafer, which are caused by the stress inside the sample. Nanomechanical properties of the sample surface hardly change in the small scope of the backside around the ablated zone. While regular changes occur in large scope, which is the conjunct result of such stresses caused by many different collateral damages.

Nanomechanical Properties of Single-Crystalline Silicon Wafer Irradiated by High-Energy Femtosecond Laser Pulses

2006 ◽  
Vol 315-316 ◽  
pp. 159-163
Author(s):  
Yan Shen Wang ◽  
Ying Chun Liang ◽  
Shen Dong ◽  
Wei Wei An ◽  
Bo Wang
Keyword(s):  
Femtosecond Laser ◽  
Silicon Wafer ◽  
Crystalline Silicon ◽  
Laser Pulses ◽  
High Energy ◽  
Femtosecond Laser Pulses ◽  
Back Surface ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Nanomechanical Properties

High-energy femtosecond laser pulses were utilized to ablate single-crystalline silicon wafer. Collateral damage areas around the ablation zone can be observed in microscope. The morphology in such areas changes gradually. The microscopic morphology and nanomechanical properties of the pre-polished back surface were measured by AFM and Hysitron TriboIndenter respectively. The topography and roughness in the ablated, metamorphic and unaffected zone are almost equal. Yet the elastic ratio and hardness on the back surface vary gradually with indent positions, which coincide with the gradual morphological changes in the metamorphic zone on the front surface. Such regular changes in nanomechanical properties, to some extent, reflect the distribution of collateral damages near the ablated zone on the back surface. And they also testify the occurrence of the ill effects that go against micromachining during high-energy femtosecond laser irradiation.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline
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