scholarly journals Orientation Control of Silicon Crystal Grain by Combination of Metal-Induced Solid-Phase Crystallization and Excimer Laser Annealing

2006 ◽  
Vol 34 (10) ◽  
pp. 684-688 ◽  
Author(s):  
Tanemasa ASANO ◽  
Gou NAKAGAWA
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Crystal ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Orientation Control

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 461-465 ◽  
Author(s):  
P.C. van der Wilt ◽  
M.G. Kane ◽  
A.B. Limanov ◽  
A.H. Firester ◽  
L. Goodman ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Solid Phase ◽  
Flexible Substrates ◽  
Full Potential ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Si Films

AbstractLow-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Uniform Performance TFT with Excimer Laser Annealing of Solid Phase Crystallized Poly-Si

1993 ◽  
Author(s):  
N. Kodama ◽  
H. Tanabe ◽  
K. Sera ◽  
K. Hamada ◽  
S. Saitoh ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Excimer Laser Annealing

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Advanced Excimer Laser Annealing of Thin Poly Si Films after Solid Phase Grain Growth

1989 ◽  
Vol 146 ◽  
Author(s):  
Takashi Noguchi ◽  
Kazuhiro Tajima ◽  
Yasushi Morita
Keyword(s):  
Electronic Properties ◽  
Grain Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Liquid Crystal Display ◽  
Silicon Film ◽  
Dendritic Structure ◽  
Large Area ◽  
Excimer Laser Annealing

ABSTRACTThin silicon films with dendritic large grains can be obtained by Si+ or P+ implantation and subsequent low temperature annealing of the silicon film. We tried further exposing the films with an excimer laser after the grain growth. As a result, improvement of electronic properties such as high carrier mobility or low resistivity were obtained. By TEM observation, polycrystalline grains with a dendritic structure did not melt after laser annealing and it was found that the improvement of electronic properties were achieved mainly due to the improvement of crystallinity by U-V(Ultra-Violet) reflectance, ESR(Electron Spin Resonance) analysis and TFT characteristics. We are convinced that this advanced laser pulse annealing method is an ideal RTA process in the near future and is expected to be applicable to ULSI processes for inter connects, high density stacked SRAM and for large area electronics on glass such as a contact line sensor or LCD(Liquid Crystal Display).

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