scholarly journals Deposition of crystalline silicon films using excimer laser.

1988 ◽  
Vol 16 (2) ◽  
pp. 75-81 ◽  
Author(s):  
Masataka MURAHARA ◽  
Nozomu TAKAHASHI ◽  
Koichi TOYODA ◽  
Susumu NAMBA
Keyword(s):  
Excimer Laser ◽  
Crystalline Silicon ◽  
Silicon Films

Line-Shaped Electron Beam System and Soi Films Prepared by The System

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Hayafuji ◽  
A. Shibata ◽  
T. Yanada ◽  
A. Sawada ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon Films ◽  
High Energy Density ◽  
Present System ◽  
Single Crystalline ◽  
Beam System ◽  
Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

Fabrication of Crystalline Silicon Films for Solar Cells by a New Method of Gas-Flow Zone Melting Crystallization.

2003 ◽  
Vol 29 (2) ◽  
pp. 242-247
Author(s):  
Shuhei Yokoyama ◽  
Manabu Ihara ◽  
Hiroaki Hashizume ◽  
Hiroshi Komiyama ◽  
Chiaki Yokoyama
Keyword(s):  
Solar Cells ◽  
Gas Flow ◽  
Crystalline Silicon ◽  
Zone Melting ◽  
Silicon Films ◽  
New Method ◽  
Flow Zone

Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates

1993 ◽  
Vol 32 (Part 1, No. 7) ◽  
pp. 3217-3226
Author(s):  
Paul W. Mertens ◽  
Herman E. Maes
Keyword(s):  
Crystalline Silicon ◽  
Silicon Films ◽  
Solid Substrates

(Invited) Electrochemical Liquid Phase Epitaxy of Crystalline Silicon Films

2021 ◽  
Vol MA2021-01 (24) ◽  
pp. 930-930
Author(s):  
Stephen Maldonado ◽  
Nathanael Downes
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystalline Silicon ◽  
Silicon Films
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